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IRFB4310PBF N-Channel 100V 130A (Tc) 300W (Tc) Through Hole TO-220AB
Price & Procurement
3,154 In Stock
Can ship immediately
 

Quantity
All prices are in JPY.
Price Break Unit Price Extended Price
1 325.00000 ¥325
10 291.80000 ¥2,918
25 275.88000 ¥6,897
100 220.68000 ¥22,068
250 208.42000 ¥52,105
500 196.16000 ¥98,080
1,000 167.96300 ¥167,963
2,500 165.51080 ¥413,777
5,000 150.79880 ¥753,994

Submit a request for quotation on quantities greater than those displayed.

IRFB4310PBF

Datasheet
Digi-Key Part Number IRFB4310PBF-ND
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Manufacturer

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Manufacturer Part Number IRFB4310PBF
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Description MOSFET N-CH 100V 130A TO-220AB
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Manufacturer Standard Lead Time 15 Weeks
Detailed Description

N-Channel 100V 130A (Tc) 300W (Tc) Through Hole TO-220AB

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Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Tube 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 7mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 250nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7670pF @ 50V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 50
Other Names *IRFB4310PBF
SP001566592