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IRFB4110PBF N-Channel 100V 120A (Tc) 370W (Tc) Through Hole TO-220AB
Price & Procurement
149 In Stock
Can ship immediately
 

Quantity
All prices are in JPY.
Price Break Unit Price Extended Price
1 344.00000 ¥344
10 309.00000 ¥3,090
25 292.08000 ¥7,302
100 233.66000 ¥23,366
250 220.68400 ¥55,171
500 207.70000 ¥103,850
1,000 177.84300 ¥177,843
2,500 175.24680 ¥438,117
5,000 159.66920 ¥798,346

Submit a request for quotation on quantities greater than those displayed.

IRFB4110PBF

Datasheet
Digi-Key Part Number IRFB4110PBF-ND
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Manufacturer

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Manufacturer Part Number IRFB4110PBF
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Description MOSFET N-CH 100V 120A TO-220AB
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Manufacturer Standard Lead Time 15 Weeks
Detailed Description

N-Channel 100V 120A (Tc) 370W (Tc) Through Hole TO-220AB

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Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Tube 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.5mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 210nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9620pF @ 50V
FET Feature -
Power Dissipation (Max) 370W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 50
Other Names 64-0076PBF
64-0076PBF-ND
SP001570598