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IRF9Z34NPBF P-Channel 55V 19A (Tc) 68W (Tc) Through Hole TO-220AB
Price & Procurement
15,295 In Stock
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All prices are in JPY.
Price Break Unit Price Extended Price
1 117.00000 ¥117
10 102.30000 ¥1,023
25 96.12000 ¥2,403
100 78.42000 ¥7,842
500 61.99200 ¥30,996
1,000 49.59300 ¥49,593
2,500 47.16800 ¥117,920

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IRF9Z34NPBF

Datasheet
Digi-Key Part Number IRF9Z34NPBF-ND
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Manufacturer

Infineon Technologies

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Manufacturer Part Number IRF9Z34NPBF
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Description MOSFET P-CH 55V 19A TO220AB
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Detailed Description

P-Channel 55V 19A (Tc) 68W (Tc) Through Hole TO-220AB

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Customer Reference
Documents & Media
Datasheets IRF9Z34NPbF
Other Related Documents IR Part Numbering System
Product Training Modules High Voltage Integrated Circuits (HVIC Gate Drivers)
Featured Product Data Processing Systems
PCN Design/Specification Mult Dev No Format/Barcode Label 15/Jan/2019
Mult Dev Label Chgs Aug/2020
PCN Assembly/Origin Mult Dev Wafer Site Chg 18/Dec/2020
HTML Datasheet IRF9Z34NPbF
EDA / CAD Models IRF9Z34NPBF by Ultra Librarian
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Tube 
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 620pF @ 25V
FET Feature -
Power Dissipation (Max) 68W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Part Number IRF9Z34
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 50
Other Names *IRF9Z34NPBF
SP001560182