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IRF7343TRPBF Mosfet Array N and P-Channel 55V 4.7A, 3.4A 2W Surface Mount 8-SO
Price & Procurement
 

Quantity
All prices are in JPY.
Price Break Unit Price Extended Price
4,000 45.88750 ¥183,550
8,000 44.31375 ¥354,510

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Alternate Package
  • Cut Tape (CT)  : IRF7343PBFCT-ND
  • Minimum Quantity: 1
  • Quantity Available: 0
  • Unit Price: ¥101.00000
  • Digi-Reel®  : IRF7343PBFDKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 0
  • Unit Price: Digi-Reel®

IRF7343TRPBF

Datasheet
Digi-Key Part Number IRF7343PBFTR-ND
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Manufacturer

Infineon Technologies

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Manufacturer Part Number IRF7343TRPBF
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Description MOSFET N/P-CH 55V 8-SOIC
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Detailed Description

Mosfet Array N and P-Channel 55V 4.7A, 3.4A 2W Surface Mount 8-SO

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Customer Reference
Documents & Media
Datasheets IRF7343PbF
Other Related Documents IR Part Numbering System
Product Training Modules High Voltage Integrated Circuits (HVIC Gate Drivers)
Featured Product Data Processing Systems
PCN Design/Specification Mult Dev Label Chgs Aug/2020
PCN Assembly/Origin Mult Dev Wafer Site Chg 18/Dec/2020
PCN Packaging Packing Material Update 16/Sep/2016
Barcode Label Update 24/Feb/2017
HTML Datasheet IRF7343PbF
Simulation Models IRF7343TRPBF Saber Model
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Tape & Reel (TR) 
Part Status Active
FET Type N and P-Channel
FET Feature Standard
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 4.7A, 3.4A
Rds On (Max) @ Id, Vgs 50mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 740pF @ 25V
Power - Max 2W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO
Base Part Number IRF7343PBF
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 4,000
Other Names IRF7343PBFTR
SP001565516