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IRF5210PBF P-Channel 100V 40A (Tc) 200W (Tc) Through Hole TO-220AB
Price & Procurement
3,873 In Stock
Can ship immediately
 

Quantity
All prices are in JPY.
Price Break Unit Price Extended Price
1 238.00000 ¥238
10 213.20000 ¥2,132
25 201.20000 ¥5,030
100 156.94000 ¥15,694
250 152.91600 ¥38,229
500 132.79800 ¥66,399
1,000 112.67700 ¥112,677
2,500 111.06760 ¥277,669
5,000 103.01920 ¥515,096

Submit a request for quotation on quantities greater than those displayed.

IRF5210PBF

Datasheet
Digi-Key Part Number IRF5210PBF-ND
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Manufacturer

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Manufacturer Part Number IRF5210PBF
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Description MOSFET P-CH 100V 40A TO-220AB
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Manufacturer Standard Lead Time 15 Weeks
Detailed Description

P-Channel 100V 40A (Tc) 200W (Tc) Through Hole TO-220AB

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Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Tube 
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 60mOhm @ 24A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2700pF @ 25V
FET Feature -
Power Dissipation (Max) 200W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 50
Other Names *IRF5210PBF
SP001559642