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IRF4905PBF P-Channel 55V 74A (Tc) 200W (Tc) Through Hole TO-220AB
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11,180 In Stock
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All prices are in JPY.
Price Break Unit Price Extended Price
1 247.00000 ¥247
10 221.80000 ¥2,218
25 209.24000 ¥5,231
100 178.27000 ¥17,827
500 146.46400 ¥73,232
1,000 127.36000 ¥127,360

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IRF4905PBF

Datasheet
Digi-Key Part Number IRF4905PBF-ND
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Manufacturer

Infineon Technologies

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Manufacturer Part Number IRF4905PBF
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Description MOSFET P-CH 55V 74A TO220AB
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Detailed Description

P-Channel 55V 74A (Tc) 200W (Tc) Through Hole TO-220AB

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Customer Reference
Documents & Media
Datasheets IRF4905PbF
Other Related Documents IR Part Numbering System
Product Training Modules High Voltage Integrated Circuits (HVIC Gate Drivers)
Featured Product Data Processing Systems
PCN Design/Specification Mult Dev Label Chgs Aug/2020
Mult Dev Lot Chgs 25/May/2021
PCN Assembly/Origin Mult Dev Wafer Site Chg 18/Dec/2020
PCN Packaging Barcode Label Update 24/Feb/2017
HTML Datasheet IRF4905PbF
EDA / CAD Models IRF4905PBF by SnapEDA
IRF4905PBF by Ultra Librarian
Simulation Models IRF4905PBF Saber Model
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Tube 
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 74A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 20mOhm @ 38A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3400pF @ 25V
FET Feature -
Power Dissipation (Max) 200W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Part Number IRF4905
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 50
Other Names *IRF4905PBF
SP001571330