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IRF3808PBF N-Channel 75V 140A (Tc) 330W (Tc) Through Hole TO-220AB
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1,295 In Stock
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All prices are in JPY.
Price Break Unit Price Extended Price
1 298.00000 ¥298
10 267.60000 ¥2,676
25 252.40000 ¥6,310
100 215.02000 ¥21,502
500 176.66000 ¥88,330
1,000 153.61800 ¥153,618

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IRF3808PBF

Datasheet
Digi-Key Part Number IRF3808PBF-ND
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Manufacturer

Infineon Technologies

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Manufacturer Part Number IRF3808PBF
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Description MOSFET N-CH 75V 140A TO220AB
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Detailed Description

N-Channel 75V 140A (Tc) 330W (Tc) Through Hole TO-220AB

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Customer Reference
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Tube 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75V
Current - Continuous Drain (Id) @ 25°C 140A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 7mOhm @ 82A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 220nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5310pF @ 25V
FET Feature -
Power Dissipation (Max) 330W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Part Number IRF3808
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 50
Other Names *IRF3808PBF
SP001563250