IRF3205ZPBF N-Channel 55V 75A (Tc) 170W (Tc) Through Hole TO-220AB
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All prices are in JPY.
Price Break Unit Price Extended Price
1 192.00000 ¥192
10 172.10000 ¥1,721
100 134.19000 ¥13,419
500 110.85800 ¥55,429
1,000 97.24400 ¥97,244

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IRF3205ZPBF

Datasheet
Digi-Key Part Number IRF3205ZPBF-ND
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Manufacturer

Infineon Technologies

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Manufacturer Part Number IRF3205ZPBF
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Description MOSFET N-CH 55V 75A TO220AB
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Detailed Description

N-Channel 55V 75A (Tc) 170W (Tc) Through Hole TO-220AB

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Customer Reference
Documents & Media
Datasheets IRF3205Z(S,L)
Other Related Documents IR Part Numbering System
Product Training Modules High Voltage Integrated Circuits (HVIC Gate Drivers)
Featured Product Data Processing Systems
PCN Assembly/Origin Mult Dev Wafer Site Chg 18/Dec/2020
PCN Packaging Tube Label Chgs 20/May/2020
HTML Datasheet IRF3205Z(S,L)
EDA / CAD Models IRF3205ZPBF by SnapEDA
IRF3205ZPBF by Ultra Librarian
Simulation Models IRF3205Z_S_LPBF Saber File
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Tube 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 6.5mOhm @ 66A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3450pF @ 25V
FET Feature -
Power Dissipation (Max) 170W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Part Number IRF3205
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 50
Other Names *IRF3205ZPBF
64-0096PBF
64-0096PBF-ND
SP001574672