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IRF3205PBF N-Channel 55V 110A (Tc) 200W (Tc) Through Hole TO-220AB
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All prices are in JPY.
Price Break Unit Price Extended Price
1 166.00000 ¥166
10 147.70000 ¥1,477
25 140.16000 ¥3,504
100 115.13000 ¥11,513
500 95.10400 ¥47,552
1,000 76.17100 ¥76,171

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IRF3205PBF

Datasheet
Digi-Key Part Number IRF3205PBF-ND
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Manufacturer

Infineon Technologies

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Manufacturer Part Number IRF3205PBF
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Description MOSFET N-CH 55V 110A TO220AB
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Detailed Description

N-Channel 55V 110A (Tc) 200W (Tc) Through Hole TO-220AB

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Customer Reference
Documents & Media
Datasheets IRF3205
Other Related Documents IR Part Numbering System
Product Training Modules High Voltage Integrated Circuits (HVIC Gate Drivers)
Featured Product Data Processing Systems
PCN Design/Specification Mult Dev Lot Chgs 25/May/2021
Mult Dev Lead Finish 28/May/2021
PCN Assembly/Origin Mult Dev A/T Site 26/Feb/2021
PCN Packaging Barcode Label Update 24/Feb/2017
HTML Datasheet IRF3205
EDA / CAD Models IRF3205PBF by SnapEDA
IRF3205PBF by Ultra Librarian
Simulation Models IRF3205PBF Saber Model
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Tube 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 62A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 146nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3247pF @ 25V
FET Feature -
Power Dissipation (Max) 200W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Part Number IRF3205
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 100
Other Names *IRF3205PBF
64-0085PBF
64-0085PBF-ND
SP001559536