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IRF3205LPBF N-Channel 55V 110A (Tc) 200W (Tc) Through Hole TO-262
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All prices are in JPY.
Price Break Unit Price Extended Price
1 194.00000 ¥194.00
10 173.10000 ¥1,731.00
25 164.24000 ¥4,106.00
100 134.89000 ¥13,489.00
500 111.43200 ¥55,716.00
1,000 97.74800 ¥97,748.00

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IRF3205LPBF

Datasheet
Digi-Key Part Number IRF3205LPBF-ND
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Manufacturer

Infineon Technologies

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Manufacturer Part Number IRF3205LPBF
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Description MOSFET N-CH 55V 110A TO262
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Detailed Description

N-Channel 55V 110A (Tc) 200W (Tc) Through Hole TO-262

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Customer Reference
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Tube 
Part Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 62A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 146nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3247pF @ 25V
FET Feature -
Power Dissipation (Max) 200W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-262
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Base Part Number IRF3205
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 50
Other Names *IRF3205LPBF
SP001564458