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IRF2807ZPBF N-Channel 75V 75A (Tc) 170W (Tc) Through Hole TO-220AB
Price & Procurement
3,905 In Stock
Can ship immediately
 

Quantity
All prices are in JPY.
Price Break Unit Price Extended Price
1 177.00000 ¥177
10 159.20000 ¥1,592
25 150.16000 ¥3,754
100 117.14000 ¥11,714
250 114.13200 ¥28,533
500 99.11400 ¥49,557
1,000 84.09500 ¥84,095
2,500 82.89360 ¥207,234
5,000 76.88700 ¥384,435

Submit a request for quotation on quantities greater than those displayed.

IRF2807ZPBF

Datasheet
Digi-Key Part Number IRF2807ZPBF-ND
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Manufacturer

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Manufacturer Part Number IRF2807ZPBF
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Description MOSFET N-CH 75V 75A TO-220AB
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Manufacturer Standard Lead Time 15 Weeks
Detailed Description

N-Channel 75V 75A (Tc) 170W (Tc) Through Hole TO-220AB

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Documents & Media
Datasheets IRF2807Z(S,L)PbF
Other Related Documents IR Part Numbering System
Product Training Modules High Voltage Integrated Circuits (HVIC Gate Drivers)
Featured Product Data Processing Systems
PCN Design/Specification Mult Dev No Format/Barcode Label 15/Jan/2019
PCN Packaging Package Drawing Update 19/Aug/2015
HTML Datasheet IRF2807Z(S,L)PbF
Simulation Models IRF2807Z Saber Model
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Tube 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 9.4mOhm @ 53A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3270pF @ 25V
FET Feature -
Power Dissipation (Max) 170W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 50
Other Names *IRF2807ZPBF
SP001574688