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IRF1405PBF N-Channel 55V 169A (Tc) 330W (Tc) Through Hole TO-220AB
Price & Procurement
1,221 In Stock
Can ship immediately
 

Quantity
All prices are in JPY.
Price Break Unit Price Extended Price
1 260.00000 ¥260
10 233.20000 ¥2,332
25 219.96000 ¥5,499
100 171.57000 ¥17,157
250 167.17200 ¥41,793
500 145.17200 ¥72,586
1,000 123.17800 ¥123,178
2,500 121.41800 ¥303,545
5,000 112.61940 ¥563,097

Submit a request for quotation on quantities greater than those displayed.

IRF1405PBF

Datasheet
Digi-Key Part Number IRF1405PBF-ND
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Manufacturer

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Manufacturer Part Number IRF1405PBF
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Description MOSFET N-CH 55V 169A TO-220AB
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Manufacturer Standard Lead Time 15 Weeks
Detailed Description

N-Channel 55V 169A (Tc) 330W (Tc) Through Hole TO-220AB

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Documents & Media
Datasheets IRF1405PbF
Other Related Documents IR Part Numbering System
Product Training Modules High Voltage Integrated Circuits (HVIC Gate Drivers)
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PCN Design/Specification Mult Dev No Format/Barcode Label 15/Jan/2019
PCN Assembly/Origin Warehouse Transfer 29/Jul/2015
PCN Packaging Packing Material Update 16/Sep/2016
HTML Datasheet IRF1405PbF
Simulation Models IRF1405PBF Saber Model
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Tube 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 169A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 5.3mOhm @ 101A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 260nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5480pF @ 25V
FET Feature -
Power Dissipation (Max) 330W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 50
Other Names *IRF1405PBF
SP001574466