IRF1010EZPBF N-Channel 60V 75A (Tc) 140W (Tc) Through Hole TO-220AB
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3,044 In Stock
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All prices are in JPY.
Price Break Unit Price Extended Price
1 197.00000 ¥197
10 176.10000 ¥1,761
100 137.31000 ¥13,731
500 113.43600 ¥56,718
1,000 99.50500 ¥99,505

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IRF1010EZPBF

Datasheet
Digi-Key Part Number IRF1010EZPBF-ND
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Manufacturer

Infineon Technologies

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Manufacturer Part Number IRF1010EZPBF
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Description MOSFET N-CH 60V 75A TO220AB
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Detailed Description

N-Channel 60V 75A (Tc) 140W (Tc) Through Hole TO-220AB

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Customer Reference
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Tube 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8.5mOhm @ 51A, 10V
Vgs(th) (Max) @ Id 4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2810pF @ 25V
FET Feature -
Power Dissipation (Max) 140W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Part Number IRF1010
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 50
Other Names *IRF1010EZPBF
SP001571244