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IRF100B201 N-Channel 100V 192A (Tc) 441W (Tc) Through Hole TO-220AB
Price & Procurement
3,119 In Stock
Can ship immediately
 

Quantity
All prices are in JPY.
Price Break Unit Price Extended Price
1 298.00000 ¥298
10 267.60000 ¥2,676
25 252.44000 ¥6,311
100 196.89000 ¥19,689
250 191.83600 ¥47,959
500 166.59400 ¥83,297
1,000 141.35100 ¥141,351
2,500 139.33200 ¥348,330
5,000 129.23540 ¥646,177

Submit a request for quotation on quantities greater than those displayed.

IRF100B201

Datasheet
Digi-Key Part Number IRF100B201-ND
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Manufacturer

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Manufacturer Part Number IRF100B201
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Description MOSFET N-CH 100V 192A TO-220AB
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Manufacturer Standard Lead Time 15 Weeks
Detailed Description

N-Channel 100V 192A (Tc) 441W (Tc) Through Hole TO-220AB

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Documents & Media
Datasheets IRF100(B,S)201
Other Related Documents IR Part Numbering System
Featured Product Data Processing Systems
PCN Packaging Tube Label Chgs 20/May/2020
Simulation Models IRF100B201 Saber Model
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series HEXFET®, StrongIRFET™
Packaging Tube 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 192A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.2mOhm @ 115A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 255nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9500pF @ 50V
FET Feature -
Power Dissipation (Max) 441W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 50
Other Names SP001561498