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IPU80R1K4P7AKMA1 N-Channel 800V 4A (Tc) 32W (Tc) Through Hole PG-TO251-3
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1,469 In Stock
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All prices are in JPY.
Price Break Unit Price Extended Price
1 123.00000 ¥123
10 109.90000 ¥1,099
25 104.28000 ¥2,607
100 85.64000 ¥8,564
500 70.74600 ¥35,373
1,000 56.66100 ¥56,661

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IPU80R1K4P7AKMA1

Datasheet
Digi-Key Part Number IPU80R1K4P7AKMA1-ND
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Manufacturer

Infineon Technologies

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Manufacturer Part Number IPU80R1K4P7AKMA1
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Description MOSFET N-CH 800V 4A TO251-3
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Manufacturer Standard Lead Time 26 Weeks
Detailed Description

N-Channel 800V 4A (Tc) 32W (Tc) Through Hole PG-TO251-3

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Customer Reference
Documents & Media
Datasheets IPU80R1K4P7
Other Related Documents Part Number Guide
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Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series CoolMOS™
Packaging Tube 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id 3.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs 10.05nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 250pF @ 500V
FET Feature Super Junction
Power Dissipation (Max) 32W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO251-3
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Base Part Number IPU80R1
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Resources
Standard Package 75
Other Names SP001422742