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Price Break Unit Price Extended Price
1 133.00000 ¥133
10 118.60000 ¥1,186
25 112.60000 ¥2,815
100 92.51000 ¥9,251
500 76.41200 ¥38,206
1,000 67.02900 ¥67,029

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IPSA70R360P7SAKMA1

Datasheet
Digi-Key Part Number IPSA70R360P7SAKMA1-ND
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Manufacturer

Infineon Technologies

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Manufacturer Part Number IPSA70R360P7SAKMA1
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Description MOSFET N-CH 700V 12.5A TO251-3
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Manufacturer Standard Lead Time 26 Weeks
Detailed Description

N-Channel 700V 12.5A (Tc) 59.5W (Tc) Through Hole PG-TO251-3

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Customer Reference
Documents & Media
Datasheets IPSA70R360P7S
PCN Assembly/Origin Mult Dev Wafer Site Add 10/Mar/2021
HTML Datasheet IPSA70R360P7S
Simulation Models MOSFET CoolMOS™ P7 700V Spice Model
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series CoolMOS™ P7
Packaging Tube 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 700V
Current - Continuous Drain (Id) @ 25°C 12.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 360mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 16.4nC @ 400V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 517pF @ 400V
FET Feature -
Power Dissipation (Max) 59.5W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO251-3
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Base Part Number IPSA70
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Resources
Standard Package 75
Other Names IPSA70R360P7S
SP001664832