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IPP320N20N3GXKSA1 N-Channel 200V 34A (Tc) 136W (Tc) Through Hole PG-TO220-3
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All prices are in JPY.
Price Break Unit Price Extended Price
1 424.00000 ¥424.00
10 380.50000 ¥3,805.00
25 359.72000 ¥8,993.00
100 311.77000 ¥31,177.00
500 266.47000 ¥133,235.00

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IPP320N20N3GXKSA1

Datasheet
Digi-Key Part Number IPP320N20N3GXKSA1-ND
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Manufacturer

Infineon Technologies

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Manufacturer Part Number IPP320N20N3GXKSA1
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Description MOSFET N-CH 200V 34A TO220-3
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Detailed Description

N-Channel 200V 34A (Tc) 136W (Tc) Through Hole PG-TO220-3

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Customer Reference
Documents & Media
Datasheets IPx320N20N3 G
Other Related Documents Part Number Guide
Featured Product Data Processing Systems
HTML Datasheet IPx320N20N3 G
Simulation Models OptiMOS™ Power MOSFET 200V N-Channel Spice Model
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging Tube 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 32mOhm @ 34A, 10V
Vgs(th) (Max) @ Id 4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2350pF @ 100V
FET Feature -
Power Dissipation (Max) 136W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package / Case TO-220-3
Base Part Number IPP320
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 50
Other Names IPP320N20N3 G
IPP320N20N3 G-ND
IPP320N20N3G
SP000677842