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IPP037N08N3GXKSA1 N-Channel 80V 100A (Tc) 214W (Tc) Through Hole PG-TO220-3
Price & Procurement
4,266 In Stock
Can ship immediately
 

Quantity
All prices are in JPY.
Price Break Unit Price Extended Price
1 270.00000 ¥270
10 242.60000 ¥2,426
25 228.84000 ¥5,721
100 178.49000 ¥17,849
250 173.91200 ¥43,478
500 151.02800 ¥75,514
1,000 128.14500 ¥128,145
2,500 126.31440 ¥315,786
5,000 117.16100 ¥585,805

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IPP037N08N3GXKSA1

Datasheet
Digi-Key Part Number IPP037N08N3GXKSA1-ND
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Manufacturer

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Manufacturer Part Number IPP037N08N3GXKSA1
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Description MOSFET N-CH 80V 100A TO220-3
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Manufacturer Standard Lead Time 18 Weeks
Detailed Description

N-Channel 80V 100A (Tc) 214W (Tc) Through Hole PG-TO220-3

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Documents & Media
Datasheets IPx035N08N3 G
Other Related Documents Part Number Guide
Featured Product Data Processing Systems
PCN Obsolescence/ EOL Mult Dev EOL 20/Oct/2015
HTML Datasheet IPx035N08N3 G
Simulation Models MOSFET OptiMOS™ 80V N-Channel Spice Model
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging Tube 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 3.75mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.5V @ 155µA
Gate Charge (Qg) (Max) @ Vgs 117nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8110pF @ 40V
FET Feature -
Power Dissipation (Max) 214W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package / Case TO-220-3
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 50
Other Names IPP037N08N3 G
IPP037N08N3 G-ND
IPP037N08N3G
SP000680776