IPD60R360P7SAUMA1 N-Channel 600V 9A (Tc) 41W (Tc) Surface Mount PG-TO252-3
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4 In Stock
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All prices are in JPY.
Price Break Unit Price Extended Price
1 135.00000 ¥135
10 121.10000 ¥1,211
100 94.44000 ¥9,444
500 78.01400 ¥39,007
1,000 68.43300 ¥68,433

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Alternate Package

IPD60R360P7SAUMA1

Datasheet
Digi-Key Part Number IPD60R360P7SAUMA1CT-ND
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Manufacturer

Infineon Technologies

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Manufacturer Part Number IPD60R360P7SAUMA1
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Description MOSFET N-CH 600V 9A TO252-3
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Manufacturer Standard Lead Time 26 Weeks
Detailed Description

N-Channel 600V 9A (Tc) 41W (Tc) Surface Mount PG-TO252-3

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Customer Reference
Documents & Media
Datasheets IPD60R360P7S
Featured Product Robotics and Automated Guided Vehicles (AGV)
PCN Assembly/Origin Mult Dev Wafer Site Add 10/Mar/2021
HTML Datasheet IPD60R360P7S
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series CoolMOS™ P7
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 360mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id 4V @ 140µA
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 555pF @ 400V
FET Feature -
Power Dissipation (Max) 41W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number IPD60R360
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours)
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Additional Resources
Standard Package 1
Other Names IPD60R360P7SAUMA1CT