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3,348 In Stock
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All prices are in JPY.
Price Break Unit Price Extended Price
1 312.00000 ¥312
10 280.80000 ¥2,808
100 225.74000 ¥22,574
500 185.46200 ¥92,731
1,000 176.63100 ¥176,631

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Alternate Package
  • Tape & Reel (TR)  : IPD60R280CFD7ATMA1TR-ND
  • Minimum Quantity: 2,500
  • Quantity Available: 2,500 - Immediate
  • Unit Price: ¥176.63120


Digi-Key Part Number IPD60R280CFD7ATMA1CT-ND

Infineon Technologies

Manufacturer Part Number IPD60R280CFD7ATMA1
Description MOSFET N-CH 650V 9A TO252-3
Manufacturer Standard Lead Time 26 Weeks
Detailed Description

N-Channel 650V 9A (Tc) 51W (Tc) Surface Mount PG-TO252-3

Customer Reference
Product Attributes
Type Description Select All
Manufacturer Infineon Technologies
Series CoolMOS™ CFD7
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 280mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 180µA
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 807pF @ 400V
FET Feature -
Power Dissipation (Max) 51W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number IPD60R280
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Resources
Standard Package 1
Other Names IPD60R280CFD7ATMA1CT