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IPD33CN10NGATMA1 N-Channel 100V 27A (Tc) 58W (Tc) Surface Mount PG-TO252-3
Price & Procurement
2,360 In Stock
Can ship immediately
 

Quantity
All prices are in JPY.
Price Break Unit Price Extended Price
1 105.00000 ¥105
10 86.50000 ¥865
25 84.92000 ¥2,123
100 67.29000 ¥6,729
500 57.04200 ¥28,521
1,000 46.46700 ¥46,467

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A ¥800 reeling fee will be applied to each reel ordered.

Alternate Package
  • Cut Tape (CT)  : IPD33CN10NGATMA1CT-ND
  • Minimum Quantity: 1
  • Quantity Available: 2,360 - Immediate
  • Unit Price: ¥105.00000

IPD33CN10NGATMA1

Datasheet
Digi-Key Part Number IPD33CN10NGATMA1DKR-ND
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Manufacturer

Infineon Technologies

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Manufacturer Part Number IPD33CN10NGATMA1
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Description MOSFET N-CH 100V 27A TO252-3
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Manufacturer Standard Lead Time 39 Weeks
Detailed Description

N-Channel 100V 27A (Tc) 58W (Tc) Surface Mount PG-TO252-3

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Customer Reference
Documents & Media
Datasheets IPx3xCN10N G
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Simulation Models MOSFET OptiMOS™ 100V N-Channel Spice Model
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging Digi-Reel® 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 33mOhm @ 27A, 10V
Vgs(th) (Max) @ Id 4V @ 29µA
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1570pF @ 50V
FET Feature -
Power Dissipation (Max) 58W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Resources
Standard Package 1
Other Names IPD33CN10NGATMA1DKR