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IPD100N06S403ATMA2 N-Channel 60V 100A (Tc) 150W (Tc) Surface Mount PG-TO252-3
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7,229 In Stock
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All prices are in JPY.
Price Break Unit Price Extended Price
1 232.00000 ¥232
10 208.00000 ¥2,080
25 196.20000 ¥4,905
100 167.15000 ¥16,715
500 137.32600 ¥68,663
1,000 119.41500 ¥119,415

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Alternate Package

IPD100N06S403ATMA2

Datasheet
Digi-Key Part Number 448-IPD100N06S403ATMA2CT-ND
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Manufacturer

Infineon Technologies

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Manufacturer Part Number IPD100N06S403ATMA2
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Description MOSFET N-CH 60V 100A TO252-3-11
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Detailed Description

N-Channel 60V 100A (Tc) 150W (Tc) Surface Mount PG-TO252-3

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Customer Reference
Documents & Media
Datasheets IPD100N06S4-03
Other Related Documents Part Number Guide
Featured Product Data Processing Systems
PCN Assembly/Origin Mult Dev Wafer Fab 12/Feb/2019
PCN Packaging Mult Dev Pkg Box Chg 3/Jan/2018
Simulation Models Modelle OptiMOS-T2 60V Spice Model
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS™
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 128nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 10400pF @ 25V
FET Feature -
Power Dissipation (Max) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number IPD100
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names 448-IPD100N06S403ATMA2CT