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IPD068N10N3GATMA1 N-Channel 100V 90A (Tc) 150W (Tc) Surface Mount PG-TO252-3
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14,217 In Stock
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All prices are in JPY.
Price Break Unit Price Extended Price
1 282.00000 ¥282
10 253.30000 ¥2,533
25 239.00000 ¥5,975
100 203.62000 ¥20,362
500 167.30000 ¥83,650
1,000 145.47700 ¥145,477

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Alternate Package
  • Tape & Reel (TR)  : IPD068N10N3GATMA1TR-ND
  • Minimum Quantity: 2,500
  • Quantity Available: 7,500 - Immediate
  • Unit Price: ¥145.47680

IPD068N10N3GATMA1

Datasheet
Digi-Key Part Number IPD068N10N3GATMA1CT-ND
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Manufacturer

Infineon Technologies

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Manufacturer Part Number IPD068N10N3GATMA1
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Description MOSFET N-CH 100V 90A TO252-3
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Detailed Description

N-Channel 100V 90A (Tc) 150W (Tc) Surface Mount PG-TO252-3

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Customer Reference
Documents & Media
Datasheets IPD068N10N3G
Other Related Documents Part Number Guide
Featured Product Data Processing Systems
PCN Packaging Mult Dev Pkg Box Chg 3/Jan/2018
HTML Datasheet IPD068N10N3G
Simulation Models MOSFET OptiMOS™ 100V N-Channel Spice Model
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 6.8mOhm @ 90A, 10V
Vgs(th) (Max) @ Id 3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 68nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4910pF @ 50V
FET Feature -
Power Dissipation (Max) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number IPD068
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names IPD068N10N3GATMA1CT