IPB60R040CFD7ATMA1 N-Channel 650V 50A (Tc) 227W (Tc) Surface Mount PG-TO263-3-2
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4,514 In Stock
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All prices are in JPY.
Price Break Unit Price Extended Price
1 1,207.00000 ¥1,207
10 1,091.00000 ¥10,910
100 903.29000 ¥90,329
500 882.54400 ¥441,272

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Alternate Package

IPB60R040CFD7ATMA1

Datasheet
Digi-Key Part Number 448-IPB60R040CFD7ATMA1CT-ND
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Manufacturer

Infineon Technologies

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Manufacturer Part Number IPB60R040CFD7ATMA1
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Description MOSFET N-CH 650V 50A TO263-3-2
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Manufacturer Standard Lead Time 26 Weeks
Detailed Description

N-Channel 650V 50A (Tc) 227W (Tc) Surface Mount PG-TO263-3-2

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Customer Reference
Documents & Media
Datasheets IPB60R040CFD7
EDA / CAD Models IPB60R040CFD7ATMA1 by Ultra Librarian
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series CoolMOS™ CFD7
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 40mOhm @ 24.9A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.25mA
Gate Charge (Qg) (Max) @ Vgs 108nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4351pF @ 400V
FET Feature -
Power Dissipation (Max) 227W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number IPB60R040
 
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Additional Resources
Standard Package 1
Other Names 448-IPB60R040CFD7ATMA1CT