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IPB320N20N3GATMA1 N-Channel 200V 34A (Tc) 136W (Tc) Surface Mount D²PAK (TO-263AB)
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6,471 In Stock
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All prices are in JPY.
Price Break Unit Price Extended Price
1 371.00000 ¥371
10 332.40000 ¥3,324
25 314.28000 ¥7,857
100 272.38000 ¥27,238
500 231.87400 ¥115,937

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Alternate Package
  • Tape & Reel (TR)  : IPB320N20N3GATMA1TR-ND
  • Minimum Quantity: 1,000
  • Quantity Available: 6,000 - Immediate
  • Unit Price: ¥212.56000

IPB320N20N3GATMA1

Datasheet
Digi-Key Part Number IPB320N20N3GATMA1CT-ND
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Manufacturer

Infineon Technologies

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Manufacturer Part Number IPB320N20N3GATMA1
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Description MOSFET N-CH 200V 34A D2PAK
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Detailed Description

N-Channel 200V 34A (Tc) 136W (Tc) Surface Mount D²PAK (TO-263AB)

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Customer Reference
Documents & Media
Datasheets IPx320N20N3 G
Other Related Documents Part Number Guide
Featured Product Data Processing Systems
PCN Packaging Mult Dev Pkg Box Chg 3/Jan/2018
HTML Datasheet IPx320N20N3 G
Simulation Models OptiMOS™ Power MOSFET 200V N-Channel Spice Model
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 32mOhm @ 34A, 10V
Vgs(th) (Max) @ Id 4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2350pF @ 100V
FET Feature -
Power Dissipation (Max) 136W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263AB)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number IPB320
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names IPB320N20N3 GCT
IPB320N20N3 GCT-ND
IPB320N20N3GATMA1CT