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IPB031N08N5ATMA1 N-Channel 80V 120A (Tc) 167W (Tc) Surface Mount D²PAK (TO-263AB)
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All prices are in JPY.
Price Break Unit Price Extended Price
1 395.00000 ¥395
10 355.40000 ¥3,554
25 335.92000 ¥8,398
100 291.14000 ¥29,114
500 248.84400 ¥124,422

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Alternate Package

IPB031N08N5ATMA1

Datasheet
Digi-Key Part Number IPB031N08N5ATMA1CT-ND
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Manufacturer

Infineon Technologies

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Manufacturer Part Number IPB031N08N5ATMA1
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Description MOSFET N-CH 80V 120A D2PAK
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Detailed Description

N-Channel 80V 120A (Tc) 167W (Tc) Surface Mount D²PAK (TO-263AB)

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Customer Reference
Documents & Media
Datasheets IPB031N08N5
Other Related Documents Part Number Guide
Featured Product Data Processing Systems
PCN Assembly/Origin Mult Dev Wafer Chg 15/Jun/2018
PCN Packaging Mult Dev Pkg Box Chg 3/Jan/2018
HTML Datasheet IPB031N08N5
Simulation Models MOSFET OptiMOS™ 80V N-Channel Spice Model
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 3.1mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.8V @ 108µA
Gate Charge (Qg) (Max) @ Vgs 87nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6240pF @ 40V
FET Feature -
Power Dissipation (Max) 167W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263AB)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number IPB031
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names IPB031N08N5ATMA1CT