IPB020N10N5LFATMA1 N-Channel 100V 120A (Tc) 313W (Tc) Surface Mount PG-TO263-3
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All prices are in JPY.
Price Break Unit Price Extended Price
1 986.00000 ¥986
10 891.00000 ¥8,910
100 737.74000 ¥73,774
500 690.76600 ¥345,383

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Alternate Package

IPB020N10N5LFATMA1

Datasheet
Digi-Key Part Number IPB020N10N5LFATMA1CT-ND
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Manufacturer

Infineon Technologies

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Manufacturer Part Number IPB020N10N5LFATMA1
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Description MOSFET N-CH 100V 120A TO263-3
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Detailed Description

N-Channel 100V 120A (Tc) 313W (Tc) Surface Mount PG-TO263-3

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Customer Reference
Documents & Media
Datasheets IPB020N10N5LFATMA1
PCN Packaging Mult Dev Pkg Box Chg 3/Jan/2018
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series OptiMOS™-5
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4.1V @ 270µA
Gate Charge (Qg) (Max) @ Vgs 195nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 840pF @ 50V
FET Feature -
Power Dissipation (Max) 313W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number IPB020
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names IPB020N10N5LFATMA1CT