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IPB017N10N5ATMA1 N-Channel 100V 180A (Tc) 375W (Tc) Surface Mount PG-TO263-7
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All prices are in JPY.
Price Break Unit Price Extended Price
1 901.00000 ¥901
10 809.20000 ¥8,092
25 764.96000 ¥19,124
100 662.97000 ¥66,297
500 566.63800 ¥283,319

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Alternate Package

IPB017N10N5ATMA1

Datasheet
Digi-Key Part Number IPB017N10N5ATMA1CT-ND
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Manufacturer

Infineon Technologies

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Manufacturer Part Number IPB017N10N5ATMA1
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Description MOSFET N-CH 100V 180A TO263-7
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Detailed Description

N-Channel 100V 180A (Tc) 375W (Tc) Surface Mount PG-TO263-7

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Customer Reference
Documents & Media
Datasheets IPB017N10N5
Other Related Documents Part Number Guide
Featured Product Data Processing Systems
PCN Assembly/Origin Mult Dev Wafer Chg 15/Jun/2018
PCN Packaging Mult Dev Pkg Box Chg 3/Jan/2018
HTML Datasheet IPB017N10N5
Simulation Models MOSFET OptiMOS™ 100V N-Channel Spice Model
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 1.7mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.8V @ 279µA
Gate Charge (Qg) (Max) @ Vgs 210nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 15600pF @ 50V
FET Feature -
Power Dissipation (Max) 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-7
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
Base Part Number IPB017
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names IPB017N10N5ATMA1CT