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IPB017N06N3GATMA1 N-Channel 60V 180A (Tc) 250W (Tc) Surface Mount PG-TO263-7
Price & Procurement
938 In Stock
Can ship immediately
 

Quantity
All prices are in JPY.
Price Break Unit Price Extended Price
1 332.00000 ¥332
10 298.60000 ¥2,986
25 282.32000 ¥7,058
100 225.87000 ¥22,587
250 213.32800 ¥53,332
500 200.77600 ¥100,388

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Alternate Package

IPB017N06N3GATMA1

Datasheet
Digi-Key Part Number IPB017N06N3GATMA1CT-ND
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Manufacturer

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Manufacturer Part Number IPB017N06N3GATMA1
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Description MOSFET N-CH 60V 180A TO263-7
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Manufacturer Standard Lead Time 18 Weeks
Detailed Description

N-Channel 60V 180A (Tc) 250W (Tc) Surface Mount PG-TO263-7

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Documents & Media
Datasheets IPB017N06N3
Other Related Documents Part Number Guide
Featured Product Data Processing Systems
PCN Assembly/Origin OptiMOS Assembly Site Add 2/Jan/2018
PCN Packaging Mult Dev Pkg Box Chg 3/Jan/2018
HTML Datasheet IPB017N06N3
Simulation Models OptiMOS™ Power MOSFET 60V N-Channel Spice Model
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.7mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 196µA
Gate Charge (Qg) (Max) @ Vgs 275nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 23000pF @ 30V
FET Feature -
Power Dissipation (Max) 250W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-7
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names IPB017N06N3 GCT
IPB017N06N3 GCT-ND
IPB017N06N3GATMA1CT