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IPAN60R125PFD7SXKSA1 N-Channel 650V 25A (Tc) 32W (Tc) Through Hole PG-TO220 Full Pack
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1,145 In Stock
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All prices are in JPY.
Price Break Unit Price Extended Price
1 323.00000 ¥323
10 290.30000 ¥2,903
25 273.80000 ¥6,845
100 233.29000 ¥23,329
500 191.66800 ¥95,834
1,000 166.66700 ¥166,667

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IPAN60R125PFD7SXKSA1

Digi-Key Part Number 448-IPAN60R125PFD7SXKSA1-ND
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Manufacturer

Infineon Technologies

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Manufacturer Part Number IPAN60R125PFD7SXKSA1
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Description MOSFET N-CH 650V 25A TO220
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Detailed Description

N-Channel 650V 25A (Tc) 32W (Tc) Through Hole PG-TO220 Full Pack

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Customer Reference
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series CoolMOS™PFD7
Packaging Tube 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 125mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id 4.5V @ 390µA
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1503pF @ 400V
FET Feature -
Power Dissipation (Max) 32W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220 Full Pack
Package / Case TO-220-3 Full Pack
Base Part Number IPAN60
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) Not Applicable
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Additional Resources
Standard Package 50
Other Names 448-IPAN60R125PFD7SXKSA1
SP003235924