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IMZ120R060M1HXKSA1 N-Channel 1.2kV 36A (Tc) 150W (Tc) Through Hole PG-TO247-4-1
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All prices are in JPY.
Price Break Unit Price Extended Price
1 1,671.00000 ¥1,671.00
10 1,535.80000 ¥15,358.00
25 1,472.16000 ¥36,804.00
100 1,326.25000 ¥132,625.00

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IMZ120R060M1HXKSA1

Datasheet
Digi-Key Part Number IMZ120R060M1HXKSA1-ND
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Manufacturer

Infineon Technologies

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Manufacturer Part Number IMZ120R060M1HXKSA1
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Description SICFET N-CH 1.2KV 36A TO247-4
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Detailed Description

N-Channel 1.2kV 36A (Tc) 150W (Tc) Through Hole PG-TO247-4-1

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Customer Reference
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series CoolSiC™
Packaging Tube 
Part Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1.2kV
Current - Continuous Drain (Id) @ 25°C 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Rds On (Max) @ Id, Vgs 78mOhm @ 13A, 18V
Vgs(th) (Max) @ Id 5.7V @ 5.6mA
Gate Charge (Qg) (Max) @ Vgs 31nC @ 18V
Vgs (Max) +23V, -7V
Input Capacitance (Ciss) (Max) @ Vds 1.06nF @ 800V
FET Feature -
Power Dissipation (Max) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-4-1
Package / Case TO-247-4
Base Part Number IMZ120
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) Not Applicable
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Additional Resources
Standard Package 30
Other Names SP001808370