BSZ013NE2LS5IATMA1 N-Channel 25V 32A (Ta), 40A (Tc) 2.1W (Ta), 69W (Tc) Surface Mount PG-TSDSON-8-FL
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1,492 In Stock
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All prices are in JPY.
Price Break Unit Price Extended Price
1 244.00000 ¥244
10 219.90000 ¥2,199
25 207.52000 ¥5,188
100 176.80000 ¥17,680
500 145.25600 ¥72,628
1,000 138.33900 ¥138,339

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Alternate Package

BSZ013NE2LS5IATMA1

Datasheet
Digi-Key Part Number 448-BSZ013NE2LS5IATMA1DKR-ND
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Manufacturer

Infineon Technologies

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Manufacturer Part Number BSZ013NE2LS5IATMA1
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Description MOSFET N-CH 25V 32A/40A TSDSON
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Detailed Description

N-Channel 25V 32A (Ta), 40A (Tc) 2.1W (Ta), 69W (Tc) Surface Mount PG-TSDSON-8-FL

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Customer Reference
Documents & Media
Datasheets BSZ013NE2LS5I
Other Related Documents Part Number Guide
Featured Product Data Processing Systems
PCN Assembly/Origin Mult Dev Site Add 30/Oct/2020
PCN Packaging Mult Dev Pkg Box Chg 3/Jan/2018
Mult Dev Reel Design Chg 2/Dec/2019
HTML Datasheet BSZ013NE2LS5I
EDA / CAD Models BSZ013NE2LS5IATMA1 by SnapEDA
Simulation Models MOSFET OptiMOS™ 25V N-Channel Spice Model
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging Digi-Reel® 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 32A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 3400pF @ 12V
FET Feature -
Power Dissipation (Max) 2.1W (Ta), 69W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TSDSON-8-FL
Package / Case 8-PowerTDFN
Base Part Number BSZ013
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names 448-BSZ013NE2LS5IATMA1DKR