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BSP318SH6327XTSA1 N-Channel 60V 2.6A (Tj) 1.8W (Ta) Surface Mount PG-SOT223-4
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1,481 In Stock
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All prices are in JPY.
Price Break Unit Price Extended Price
1 118.00000 ¥118.00
10 104.00000 ¥1,040.00
25 97.76000 ¥2,444.00
100 79.78000 ¥7,978.00
500 63.06800 ¥31,534.00

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Alternate Package
  • Tape & Reel (TR)  : BSP318SH6327XTSA1TR-ND
  • Minimum Quantity: 1,000
  • Quantity Available: 1,000 - Immediate
  • Unit Price: ¥52.55700

BSP318SH6327XTSA1

Datasheet
Digi-Key Part Number BSP318SH6327XTSA1CT-ND
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Manufacturer

Infineon Technologies

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Manufacturer Part Number BSP318SH6327XTSA1
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Description MOSFET N-CH 60V 2.6A SOT223-4
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Manufacturer Standard Lead Time 34 Weeks
Detailed Description

N-Channel 60V 2.6A (Tj) 1.8W (Ta) Surface Mount PG-SOT223-4

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Customer Reference
Documents & Media
Datasheets BSP318S
Other Related Documents Part Number Guide
Featured Product Data Processing Systems
PCN Assembly/Origin PCN 2016-052-A Retraction 25/Apr/2017
PCN Packaging Mult Dev Cover Tape Chg 9/Mar/2020
Mult Dev Pkg Update 28/May/2020
HTML Datasheet BSP318S
Simulation Models MOSFET OptiMOS™ 60V N-Channel Spice Model
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series SIPMOS®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 2.6A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 90mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id 2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 380pF @ 25V
FET Feature -
Power Dissipation (Max) 1.8W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-SOT223-4
Package / Case TO-261-4, TO-261AA
Base Part Number BSP318
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names BSP318SH6327XTSA1CT