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BSC600N25NS3GATMA1 N-Channel 250V 25A (Tc) 125W (Tc) Surface Mount PG-TDSON-8-1
Price & Procurement
14,162 In Stock
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All prices are in JPY.
Price Break Unit Price Extended Price
1 367.00000 ¥367
10 330.10000 ¥3,301
25 312.00000 ¥7,800
100 270.41000 ¥27,041
500 230.20000 ¥115,100
1,000 211.02700 ¥211,027

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Alternate Package
  • Tape & Reel (TR)  : BSC600N25NS3GATMA1TR-ND
  • Minimum Quantity: 5,000
  • Quantity Available: 10,000 - Immediate
  • Unit Price: ¥211.02680

BSC600N25NS3GATMA1

Datasheet
Digi-Key Part Number BSC600N25NS3GATMA1CT-ND
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Manufacturer

Infineon Technologies

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Manufacturer Part Number BSC600N25NS3GATMA1
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Description MOSFET N-CH 250V 25A TDSON-8-1
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Detailed Description

N-Channel 250V 25A (Tc) 125W (Tc) Surface Mount PG-TDSON-8-1

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Customer Reference
Documents & Media
Datasheets BSC600N25NS3 G
Other Related Documents Part Number Guide
Featured Product Data Processing Systems
PCN Design/Specification Mult Dev Material Chgs 22/Dec/2020
PCN Packaging Mult Dev Pkg Box Chg 3/Jan/2018
Mult Dev Reel Design Chg 2/Dec/2019
Simulation Models MOSFET OptiMOS™ 250V N-Channel Spice Model
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 60mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2350pF @ 100V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-1
Package / Case 8-PowerTDFN
Base Part Number BSC600
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names BSC600N25NS3 GCT
BSC600N25NS3 GCT-ND
BSC600N25NS3GATMA1CT