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BSC0501NSIATMA1 N-Channel 30V 29A (Ta), 100A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount PG-TDSON-8-6
Price & Procurement
10,344 In Stock
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All prices are in JPY.
Price Break Unit Price Extended Price
1 179.00000 ¥179
10 159.30000 ¥1,593
25 151.24000 ¥3,781
100 124.24000 ¥12,424
500 102.64000 ¥51,320
1,000 82.20600 ¥82,206

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Alternate Package
  • Tape & Reel (TR)  : 448-BSC0501NSIATMA1TR-ND
  • Minimum Quantity: 5,000
  • Quantity Available: 10,000 - Immediate
  • Unit Price: ¥82.20640

BSC0501NSIATMA1

Datasheet
Digi-Key Part Number 448-BSC0501NSIATMA1CT-ND
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Manufacturer

Infineon Technologies

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Manufacturer Part Number BSC0501NSIATMA1
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Description MOSFET N-CH 30V 29A/100A TDSON
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Detailed Description

N-Channel 30V 29A (Ta), 100A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount PG-TDSON-8-6

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Customer Reference
Documents & Media
Datasheets BSC0501NSI
Other Related Documents Part Number Guide
Featured Product Data Processing Systems
PCN Packaging Mult Dev Pkg Box Chg 3/Jan/2018
Mult Dev Reel Design Chg 2/Dec/2019
HTML Datasheet BSC0501NSI
Simulation Models MOSFET OptiMOS™ 30V N-Channel Spice Model
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 29A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2200pF @ 15V
FET Feature Schottky Diode (Body)
Power Dissipation (Max) 2.5W (Ta), 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-6
Package / Case 8-PowerTDFN
Base Part Number BSC0501
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names 448-BSC0501NSIATMA1CT