BSC035N10NS5ATMA1 N-Channel 100V 100A (Tc) 2.5W (Ta), 156W (Tc) Surface Mount PG-TDSON-8-7
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All prices are in JPY.
Price Break Unit Price Extended Price
1 418.00000 ¥418
10 375.70000 ¥3,757
100 307.89000 ¥30,789
500 263.15600 ¥131,578

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Alternate Package

BSC035N10NS5ATMA1

Datasheet
Digi-Key Part Number BSC035N10NS5ATMA1CT-ND
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Manufacturer

Infineon Technologies

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Manufacturer Part Number BSC035N10NS5ATMA1
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Description MOSFET N-CH 100V 100A TDSON
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Detailed Description

N-Channel 100V 100A (Tc) 2.5W (Ta), 156W (Tc) Surface Mount PG-TDSON-8-7

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Customer Reference
Documents & Media
Datasheets BSC035N10NS5
Other Related Documents Part Number Guide
Featured Product Data Processing Systems
PCN Design/Specification Mult Dev Switch Repl 7/Dec/2020
PCN Assembly/Origin Mult Dev Site Add 14/Dec/2020
PCN Packaging Mult Dev Pkg Box Chg 3/Jan/2018
Mult Dev Reel Design Chg 2/Dec/2019
HTML Datasheet BSC035N10NS5
EDA / CAD Models BSC035N10NS5ATMA1 by Ultra Librarian
Simulation Models MOSFET OptiMOS™ 100V N-Channel Spice Model
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 3.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3.8V @ 115µA
Gate Charge (Qg) (Max) @ Vgs 87nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6500pF @ 50V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 156W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-7
Package / Case 8-PowerTDFN
Base Part Number BSC035
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names BSC035N10NS5ATMA1CT