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BSB056N10NN3GXUMA1 N-Channel 100V 9A (Ta), 83A (Tc) 2.8W (Ta), 78W (Tc) Surface Mount MG-WDSON-2, CanPAK M™
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3,661 In Stock
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All prices are in JPY.
Price Break Unit Price Extended Price
1 394.00000 ¥394
10 354.00000 ¥3,540
25 334.64000 ¥8,366
100 290.00000 ¥29,000
500 246.87000 ¥123,435
1,000 226.30900 ¥226,309

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Alternate Package

BSB056N10NN3GXUMA1

Datasheet
Digi-Key Part Number BSB056N10NN3GXUMA1CT-ND
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Manufacturer

Infineon Technologies

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Manufacturer Part Number BSB056N10NN3GXUMA1
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Description MOSFET N-CH 100V 9A/83A 2WDSON
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Detailed Description

N-Channel 100V 9A (Ta), 83A (Tc) 2.8W (Ta), 78W (Tc) Surface Mount MG-WDSON-2, CanPAK M™

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Customer Reference
Documents & Media
Datasheets BSB056N10NN3 G
Other Related Documents Part Number Guide
Featured Product Data Processing Systems
PCN Assembly/Origin Mult Dev Site Add 30/Dec/2020
PCN Packaging Mult Dev Pkg Box Chg 3/Jan/2018
Mult Dev Reel Design Chg 2/Dec/2019
HTML Datasheet BSB056N10NN3 G
Simulation Models MOSFET OptiMOS™ 100V N-Channel Spice Model
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 9A (Ta), 83A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 5.6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 3.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 74nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5500pF @ 50V
FET Feature -
Power Dissipation (Max) 2.8W (Ta), 78W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package MG-WDSON-2, CanPAK M™
Package / Case 3-WDSON
Base Part Number BSB056
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours)
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Additional Resources
Standard Package 1
Other Names BSB056N10NN3 GCT
BSB056N10NN3 GCT-ND
BSB056N10NN3GXUMA1CT