AUIRFR6215TRL P-Channel 150V 13A (Tc) 110W (Tc) Surface Mount D-Pak
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All prices are in JPY.
Price Break Unit Price Extended Price
1 346.00000 ¥346
10 310.70000 ¥3,107
100 249.79000 ¥24,979
500 205.22400 ¥102,612
1,000 195.45300 ¥195,453

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Alternate Package
  • Tube  : AUIRFR6215-ND
  • Minimum Quantity: 1
  • Quantity Available: 4,076 - Immediate
  • Unit Price: ¥346.00000

AUIRFR6215TRL

Datasheet
Digi-Key Part Number 448-AUIRFR6215TRLCT-ND
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Manufacturer

Infineon Technologies

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Manufacturer Part Number AUIRFR6215TRL
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Description MOSFET P-CH 150V 13A DPAK
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Detailed Description

P-Channel 150V 13A (Tc) 110W (Tc) Surface Mount D-Pak

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Customer Reference
Documents & Media
Datasheets AUIRFR6215
Other Related Documents Part Number Guide
Product Training Modules High Voltage Integrated Circuits (HVIC Gate Drivers)
Featured Product Data Processing Systems
PCN Design/Specification Mult Dev Lot Chgs 25/May/2021
PCN Assembly/Origin Mult Dev A/T Site 2/Mar/2021
PCN Packaging Package Drawing Update 19/Aug/2015
HTML Datasheet AUIRFR6215
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150V
Current - Continuous Drain (Id) @ 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 295mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 66nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 860pF @ 25V
FET Feature -
Power Dissipation (Max) 110W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number AUIRFR6215
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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AUIRFR6215

MOSFET P-CH 150V 13A DPAK

Infineon Technologies

¥346.00000 Details
Additional Resources
Standard Package 1
Other Names 448-AUIRFR6215TRLCT