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EPC8002 N-Channel 65V 2A (Ta) Surface Mount Die
Price & Procurement
50,000 In Stock
Can ship immediately
 

Quantity
All prices are in JPY.
Price Break Unit Price Extended Price
2,500 158.53680 ¥396,342
5,000 144.44460 ¥722,223
12,500 140.92160 ¥1,761,520

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Cut Tape (CT)  : 917-1118-1-ND
  • Minimum Quantity: 1
  • Quantity Available: 50,278 - Immediate
  • Unit Price: ¥311.00000
  • Digi-Reel®  : 917-1118-6-ND
  • Minimum Quantity: 1
  • Quantity Available: 50,278 - Immediate
  • Unit Price: Digi-Reel®

EPC8002

Datasheet
Digi-Key Part Number 917-1118-2-ND
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Manufacturer

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Manufacturer Part Number EPC8002
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Description GANFET TRANS 65V 2.7A BUMPED DIE
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Manufacturer Standard Lead Time 12 Weeks
Detailed Description

N-Channel 65V 2A (Ta) Surface Mount Die

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Documents & Media
Product Training Modules eGaN® FET Reliability
Datasheets EPC8002
eGaN® FET Brief
HTML Datasheet eGaN® FET Brief
Reference Design Library EPC9022: 1.6A, 0 ~ 28V, Half H-Bridge
Video File Texas Instruments/Wurth/EPC GaN Solutions First Look Video
PCN Assembly/Origin Mult Dev Assembly Chg 1/Jun/2020
Product Attributes
Type Description Select All
Categories
Manufacturer EPC
Series eGaN®
Packaging Tape & Reel (TR) 
Part Status Active
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 65V
Current - Continuous Drain (Id) @ 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 530mOhm @ 500mA, 5V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Vgs (Max) +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds 21pF @ 32.5V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Die
Package / Case Die
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 2,500
Other Names 917-1118-2