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SIS890 Vishay Siliconix - Transistors - FETs, MOSFETs - Single

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Compare Parts Datasheets Image Digi-Key Part Number Manufacturer Part Number Manufacturer Description Quantity Available
Unit Price
JPY
Minimum Quantity Packaging Series Part Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Mounting Type Supplier Device Package Package / Case
   
SIS890DN-T1-GE3 Datasheet SIS890DN-T1-GE3 - Vishay Siliconix SIS890DN-T1-GE3TR-ND SIS890DN-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 30A PPAK1212-8 33,000 - Immediate Available: 33,000 ¥78.88900 3,000 Minimum: 3,000 Tape & Reel (TR)
Alternate Packaging
TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100V 30A (Tc) 4.5V, 10V 23.5mOhm @ 10A, 10V 3V @ 250µA 29nC @ 10V ±20V 802pF @ 50V
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3.7W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 PowerPAK® 1212-8
SIS890DN-T1-GE3 Datasheet SIS890DN-T1-GE3 - Vishay Siliconix SIS890DN-T1-GE3CT-ND SIS890DN-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 30A PPAK1212-8 34,430 - Immediate Available: 34,430 ¥174.00000 1 Minimum: 1 Cut Tape (CT)
Alternate Packaging
TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100V 30A (Tc) 4.5V, 10V 23.5mOhm @ 10A, 10V 3V @ 250µA 29nC @ 10V ±20V 802pF @ 50V
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3.7W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 PowerPAK® 1212-8
SIS890DN-T1-GE3 Datasheet SIS890DN-T1-GE3 - Vishay Siliconix SIS890DN-T1-GE3DKR-ND SIS890DN-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 30A PPAK1212-8 34,430 - Immediate Available: 34,430 Digi-Reel® 1 Minimum: 1 Digi-Reel®
Alternate Packaging
TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100V 30A (Tc) 4.5V, 10V 23.5mOhm @ 10A, 10V 3V @ 250µA 29nC @ 10V ±20V 802pF @ 50V
-
3.7W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 PowerPAK® 1212-8
SIS890ADN-T1-GE3 Datasheet SIS890ADN-T1-GE3 - Vishay Siliconix 742-SIS890ADN-T1-GE3TR-ND SIS890ADN-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 7.6A/24.7A PPAK 3,000 - Immediate Available: 3,000 ¥47.17767 3,000 Minimum: 3,000 Tape & Reel (TR)
Alternate Packaging
-
Active N-Channel MOSFET (Metal Oxide) 100V 7.6A (Ta), 24.7A (Tc)
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25.5mOhm @ 10A, 10V 2.5V @ 250µA 29nC @ 10V ±20V 1330pF @ 50V
-
3.6W (Ta), 39W (Tc) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 PowerPAK® 1212-8
SIS890ADN-T1-GE3 Datasheet SIS890ADN-T1-GE3 - Vishay Siliconix 742-SIS890ADN-T1-GE3CT-ND SIS890ADN-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 7.6A/24.7A PPAK 3,550 - Immediate Available: 3,550 ¥118.00000 1 Minimum: 1 Cut Tape (CT)
Alternate Packaging
-
Active N-Channel MOSFET (Metal Oxide) 100V 7.6A (Ta), 24.7A (Tc)
-
25.5mOhm @ 10A, 10V 2.5V @ 250µA 29nC @ 10V ±20V 1330pF @ 50V
-
3.6W (Ta), 39W (Tc) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 PowerPAK® 1212-8
SIS890ADN-T1-GE3 Datasheet SIS890ADN-T1-GE3 - Vishay Siliconix 742-SIS890ADN-T1-GE3DKR-ND SIS890ADN-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 7.6A/24.7A PPAK 3,550 - Immediate Available: 3,550 Digi-Reel® 1 Minimum: 1 Digi-Reel®
Alternate Packaging
-
Active N-Channel MOSFET (Metal Oxide) 100V 7.6A (Ta), 24.7A (Tc)
-
25.5mOhm @ 10A, 10V 2.5V @ 250µA 29nC @ 10V ±20V 1330pF @ 50V
-
3.6W (Ta), 39W (Tc) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 PowerPAK® 1212-8
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08:48:20 8/2/2021