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SIHD14 Vishay Siliconix - Transistors - FETs, MOSFETs - Single

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Compare Parts Datasheets Image Digi-Key Part Number Manufacturer Part Number Manufacturer Description Quantity Available
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JPY
Minimum Quantity Packaging Series Part Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Mounting Type Supplier Device Package Package / Case
   
SIHD14N60E-GE3 Datasheet SIHD14N60E-GE3 - Vishay Siliconix SIHD14N60E-GE3-ND SIHD14N60E-GE3 Vishay Siliconix MOSFET N-CH 600V 13A DPAK 5,795 - Immediate Available: 5,795 ¥283.00000 1 Minimum: 1 Tube E Active N-Channel MOSFET (Metal Oxide) 600V 13A (Tc) 10V 309mOhm @ 7A, 10V 4V @ 250µA 64nC @ 10V ±30V 1205pF @ 100V
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147W (Tc) -55°C ~ 150°C (TJ) Surface Mount D-PAK (TO-252AA) TO-252-3, DPak (2 Leads + Tab), SC-63
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SIHD14N60E-BE3 - Vishay Siliconix 742-SIHD14N60E-BE3-ND
SIHD14N60E-BE3 Vishay Siliconix MOSFET N-CH 600V 13A TO252AA 2,996 - Immediate Available: 2,996 ¥283.00000 1 Minimum: 1 Tube E Active N-Channel MOSFET (Metal Oxide) 600V 13A (Tc) 10V 309mOhm @ 7A, 10V 4V @ 250µA 64nC @ 10V ±30V 1205pF @ 100V
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147W (Tc) -55°C ~ 150°C (TJ) Surface Mount TO-252AA TO-252-3, DPak (2 Leads + Tab), SC-63
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02:37:49 7/28/2021