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TK20E60 Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Single

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Compare Parts Datasheets Image Digi-Key Part Number Manufacturer Part Number Manufacturer Description Quantity Available
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JPY
Minimum Quantity Packaging Series Part Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Mounting Type Supplier Device Package Package / Case
   
TK20E60W5,S1VX Datasheet Photo Not Available 264-TK20E60W5S1VX-ND
TK20E60W5,S1VX Toshiba Semiconductor and Storage X35 PB-F POWER MOSFET TRANSISTOR 0 Available: 0
Standard Lead Time 12 Weeks
¥395.00000 1 Minimum: 1 Tube
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TK20E60W,S1VX Datasheet TK20E60W,S1VX - Toshiba Semiconductor and Storage TK20E60WS1VX-ND TK20E60W,S1VX Toshiba Semiconductor and Storage MOSFET N-CH 600V 20A TO220 0 Available: 0
Standard Lead Time 16 Weeks
¥512.78000 50
Non-Stock
Minimum: 50
Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600V 20A (Ta) 10V 155mOhm @ 10A, 10V 3.7V @ 1mA 48nC @ 10V ±30V 1680pF @ 300V
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165W (Tc) 150°C (TJ) Through Hole TO-220 TO-220-3
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10:40:17 7/27/2021