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FDS26 ON Semiconductor - Transistors - FETs, MOSFETs - Single

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Compare Parts Datasheets Image Digi-Key Part Number Manufacturer Part Number Manufacturer Description Quantity Available
Unit Price
JPY
Minimum Quantity Packaging Series Part Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Mounting Type Supplier Device Package Package / Case
   
FDS2670 Datasheet FDS2670 - ON Semiconductor FDS2670TR-ND FDS2670 ON Semiconductor MOSFET N-CH 200V 3A 8SOIC 2,500 - Immediate Available: 2,500 ¥117.96440 2,500 Minimum: 2,500 Tape & Reel (TR)
Alternate Packaging
PowerTrench® Active N-Channel MOSFET (Metal Oxide) 200V 3A (Ta) 10V 130mOhm @ 3A, 10V 4.5V @ 250µA 43nC @ 10V ±20V 1228pF @ 100V
-
2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC 8-SOIC (0.154", 3.90mm Width)
FDS2670 Datasheet FDS2670 - ON Semiconductor FDS2670CT-ND FDS2670 ON Semiconductor MOSFET N-CH 200V 3A 8SOIC 4,739 - Immediate Available: 4,739 ¥218.00000 1 Minimum: 1 Cut Tape (CT)
Alternate Packaging
PowerTrench® Active N-Channel MOSFET (Metal Oxide) 200V 3A (Ta) 10V 130mOhm @ 3A, 10V 4.5V @ 250µA 43nC @ 10V ±20V 1228pF @ 100V
-
2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC 8-SOIC (0.154", 3.90mm Width)
FDS2670 Datasheet FDS2670 - ON Semiconductor FDS2670DKR-ND FDS2670 ON Semiconductor MOSFET N-CH 200V 3A 8SOIC 4,739 - Immediate Available: 4,739 Digi-Reel® 1 Minimum: 1 Digi-Reel®
Alternate Packaging
PowerTrench® Active N-Channel MOSFET (Metal Oxide) 200V 3A (Ta) 10V 130mOhm @ 3A, 10V 4.5V @ 250µA 43nC @ 10V ±20V 1228pF @ 100V
-
2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC 8-SOIC (0.154", 3.90mm Width)
FDS2672 Datasheet FDS2672 - ON Semiconductor FDS2672TR-ND FDS2672 ON Semiconductor MOSFET N-CH 200V 3.9A 8SOIC 0 Available: 0 ¥125.13360 2,500 Minimum: 2,500 Tape & Reel (TR)
Alternate Packaging
UltraFET™ Active N-Channel MOSFET (Metal Oxide) 200V 3.9A (Ta) 6V, 10V 70mOhm @ 3.9A, 10V 4V @ 250µA 46nC @ 10V ±20V 2535pF @ 100V
-
2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC 8-SOIC (0.154", 3.90mm Width)
FDS2672 Datasheet FDS2672 - ON Semiconductor FDS2672CT-ND FDS2672 ON Semiconductor MOSFET N-CH 200V 3.9A 8SOIC 2,174 - Immediate Available: 2,174 ¥233.00000 1 Minimum: 1 Cut Tape (CT)
Alternate Packaging
UltraFET™ Active N-Channel MOSFET (Metal Oxide) 200V 3.9A (Ta) 6V, 10V 70mOhm @ 3.9A, 10V 4V @ 250µA 46nC @ 10V ±20V 2535pF @ 100V
-
2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC 8-SOIC (0.154", 3.90mm Width)
FDS2672 Datasheet FDS2672 - ON Semiconductor FDS2672DKR-ND FDS2672 ON Semiconductor MOSFET N-CH 200V 3.9A 8SOIC 2,174 - Immediate Available: 2,174 Digi-Reel® 1 Minimum: 1 Digi-Reel®
Alternate Packaging
UltraFET™ Active N-Channel MOSFET (Metal Oxide) 200V 3.9A (Ta) 6V, 10V 70mOhm @ 3.9A, 10V 4V @ 250µA 46nC @ 10V ±20V 2535pF @ 100V
-
2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC 8-SOIC (0.154", 3.90mm Width)
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17:08:32 7/31/2021