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IRFS3306 Infineon Technologies - Transistors - FETs, MOSFETs - Single

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Compare Parts Datasheets Image Digi-Key Part Number Manufacturer Part Number Manufacturer Description Quantity Available
Unit Price
JPY
Minimum Quantity Packaging Series Part Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Mounting Type Supplier Device Package Package / Case
   
IRFS3306TRLPBF Datasheet IRFS3306TRLPBF - Infineon Technologies IRFS3306TRLPBFTR-ND IRFS3306TRLPBF Infineon Technologies MOSFET N-CH 60V 120A D2PAK 800 - Immediate Available: 800 ¥198.50375 800 Minimum: 800 Tape & Reel (TR)
Alternate Packaging
HEXFET® Active N-Channel MOSFET (Metal Oxide) 60V 120A (Tc) 10V 4.2mOhm @ 75A, 10V 4V @ 150µA 120nC @ 10V ±20V 4520pF @ 50V
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230W (Tc) -55°C ~ 175°C (TJ) Surface Mount D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFS3306TRLPBF Datasheet IRFS3306TRLPBF - Infineon Technologies IRFS3306TRLPBFCT-ND IRFS3306TRLPBF Infineon Technologies MOSFET N-CH 60V 120A D2PAK 850 - Immediate Available: 850 ¥334.00000 1 Minimum: 1 Cut Tape (CT)
Alternate Packaging
HEXFET® Active N-Channel MOSFET (Metal Oxide) 60V 120A (Tc) 10V 4.2mOhm @ 75A, 10V 4V @ 150µA 120nC @ 10V ±20V 4520pF @ 50V
-
230W (Tc) -55°C ~ 175°C (TJ) Surface Mount D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFS3306TRLPBF Datasheet IRFS3306TRLPBF - Infineon Technologies IRFS3306TRLPBFDKR-ND IRFS3306TRLPBF Infineon Technologies MOSFET N-CH 60V 120A D2PAK 850 - Immediate Available: 850 Digi-Reel® 1 Minimum: 1 Digi-Reel®
Alternate Packaging
HEXFET® Active N-Channel MOSFET (Metal Oxide) 60V 120A (Tc) 10V 4.2mOhm @ 75A, 10V 4V @ 150µA 120nC @ 10V ±20V 4520pF @ 50V
-
230W (Tc) -55°C ~ 175°C (TJ) Surface Mount D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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21:07:09 7/30/2021