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IRF7842 Infineon Technologies - Transistors - FETs, MOSFETs - Single

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Compare Parts Datasheets Image Digi-Key Part Number Manufacturer Part Number Manufacturer Description Quantity Available
Unit Price
JPY
Minimum Quantity Packaging Series Part Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Mounting Type Supplier Device Package Package / Case
   
IRF7842TRPBF Datasheet IRF7842TRPBF - Infineon Technologies IRF7842PBFTR-ND IRF7842TRPBF Infineon Technologies MOSFET N-CH 40V 18A 8SO 12,000 - Immediate Available: 12,000 ¥119.28075 4,000 Minimum: 4,000 Tape & Reel (TR)
Alternate Packaging
HEXFET® Active N-Channel MOSFET (Metal Oxide) 40V 18A (Ta) 4.5V, 10V 5mOhm @ 17A, 10V 2.25V @ 250µA 50nC @ 4.5V ±20V 4500pF @ 20V
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2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount 8-SO 8-SOIC (0.154", 3.90mm Width)
IRF7842TRPBF Datasheet IRF7842TRPBF - Infineon Technologies IRF7842PBFCT-ND IRF7842TRPBF Infineon Technologies MOSFET N-CH 40V 18A 8SO 23,084 - Immediate Available: 23,084 ¥211.00000 1 Minimum: 1 Cut Tape (CT)
Alternate Packaging
HEXFET® Active N-Channel MOSFET (Metal Oxide) 40V 18A (Ta) 4.5V, 10V 5mOhm @ 17A, 10V 2.25V @ 250µA 50nC @ 4.5V ±20V 4500pF @ 20V
-
2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount 8-SO 8-SOIC (0.154", 3.90mm Width)
IRF7842TRPBF Datasheet IRF7842TRPBF - Infineon Technologies IRF7842PBFDKR-ND IRF7842TRPBF Infineon Technologies MOSFET N-CH 40V 18A 8SO 23,084 - Immediate Available: 23,084 Digi-Reel® 1 Minimum: 1 Digi-Reel®
Alternate Packaging
HEXFET® Active N-Channel MOSFET (Metal Oxide) 40V 18A (Ta) 4.5V, 10V 5mOhm @ 17A, 10V 2.25V @ 250µA 50nC @ 4.5V ±20V 4500pF @ 20V
-
2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount 8-SO 8-SOIC (0.154", 3.90mm Width)
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18:58:33 7/29/2021