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IPB025 Infineon Technologies - Transistors - FETs, MOSFETs - Single

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Compare Parts Datasheets Image Digi-Key Part Number Manufacturer Part Number Manufacturer Description Quantity Available
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Minimum Quantity Packaging Series Part Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Mounting Type Supplier Device Package Package / Case
   
IPB025N08N3GATMA1 Datasheet IPB025N08N3GATMA1 - Infineon Technologies IPB025N08N3GATMA1TR-ND IPB025N08N3GATMA1 Infineon Technologies MOSFET N-CH 80V 120A D2PAK 3,000 - Immediate Available: 3,000 ¥426.18500 1,000 Minimum: 1,000 Tape & Reel (TR)
Alternate Packaging
OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80V 120A (Tc) 6V, 10V 2.5mOhm @ 100A, 10V 3.5V @ 270µA 206nC @ 10V ±20V 14200pF @ 40V
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300W (Tc) -55°C ~ 175°C (TJ) Surface Mount D²PAK (TO-263AB) TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB025N08N3GATMA1 Datasheet IPB025N08N3GATMA1 - Infineon Technologies IPB025N08N3GATMA1CT-ND IPB025N08N3GATMA1 Infineon Technologies MOSFET N-CH 80V 120A D2PAK 3,151 - Immediate Available: 3,151 ¥677.00000 1 Minimum: 1 Cut Tape (CT)
Alternate Packaging
OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80V 120A (Tc) 6V, 10V 2.5mOhm @ 100A, 10V 3.5V @ 270µA 206nC @ 10V ±20V 14200pF @ 40V
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300W (Tc) -55°C ~ 175°C (TJ) Surface Mount D²PAK (TO-263AB) TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB025N08N3GATMA1 Datasheet IPB025N08N3GATMA1 - Infineon Technologies IPB025N08N3GATMA1DKR-ND IPB025N08N3GATMA1 Infineon Technologies MOSFET N-CH 80V 120A D2PAK 3,151 - Immediate Available: 3,151 Digi-Reel® 1 Minimum: 1 Digi-Reel®
Alternate Packaging
OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80V 120A (Tc) 6V, 10V 2.5mOhm @ 100A, 10V 3.5V @ 270µA 206nC @ 10V ±20V 14200pF @ 40V
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300W (Tc) -55°C ~ 175°C (TJ) Surface Mount D²PAK (TO-263AB) TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB025N10N3GATMA1 Datasheet IPB025N10N3GATMA1 - Infineon Technologies IPB025N10N3GATMA1TR-ND IPB025N10N3GATMA1 Infineon Technologies MOSFET N-CH 100V 180A TO263-7 0 Available: 0 ¥511.42200 1,000 Minimum: 1,000 Tape & Reel (TR)
Alternate Packaging
OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100V 180A (Tc) 6V, 10V 2.5mOhm @ 100A, 10V 3.5V @ 275µA 206nC @ 10V ±20V 14800pF @ 50V
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300W (Tc) -55°C ~ 175°C (TJ) Surface Mount PG-TO263-7 TO-263-7, D²Pak (6 Leads + Tab)
IPB025N10N3GATMA1 Datasheet IPB025N10N3GATMA1 - Infineon Technologies IPB025N10N3GATMA1CT-ND IPB025N10N3GATMA1 Infineon Technologies MOSFET N-CH 100V 180A TO263-7 0 Available: 0 ¥813.00000 1 Minimum: 1 Cut Tape (CT)
Alternate Packaging
OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100V 180A (Tc) 6V, 10V 2.5mOhm @ 100A, 10V 3.5V @ 275µA 206nC @ 10V ±20V 14800pF @ 50V
-
300W (Tc) -55°C ~ 175°C (TJ) Surface Mount PG-TO263-7 TO-263-7, D²Pak (6 Leads + Tab)
IPB025N10N3GATMA1 Datasheet IPB025N10N3GATMA1 - Infineon Technologies IPB025N10N3GATMA1DKR-ND IPB025N10N3GATMA1 Infineon Technologies MOSFET N-CH 100V 180A TO263-7 0 Available: 0 Digi-Reel® 1 Minimum: 1 Digi-Reel®
Alternate Packaging
OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100V 180A (Tc) 6V, 10V 2.5mOhm @ 100A, 10V 3.5V @ 275µA 206nC @ 10V ±20V 14800pF @ 50V
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300W (Tc) -55°C ~ 175°C (TJ) Surface Mount PG-TO263-7 TO-263-7, D²Pak (6 Leads + Tab)
IPB025N10N3GE8187ATMA1 Datasheet IPB025N10N3GE8187ATMA1 - Infineon Technologies IPB025N10N3GE8187ATMA1TR-ND IPB025N10N3GE8187ATMA1 Infineon Technologies MOSFET N-CH 100V 180A TO263-7 0 Available: 0 ¥501.92800
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Tape & Reel (TR) OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 100V 180A (Tc) 6V, 10V 2.5mOhm @ 100A, 10V 3.5V @ 275µA 206nC @ 10V ±20V 14800pF @ 50V
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300W (Tc) -55°C ~ 175°C (TJ) Surface Mount PG-TO263-7 TO-263-7, D²Pak (6 Leads + Tab)
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06:07:01 6/25/2021