EPCが提供するEPC9065 Quicik Start Guideのデータシート

EFFICIENT POWER CONVERSION l
Development Board
EPC9065
Quick Start Guide
EPC2007C, EPC2038
6.78 MHz, High Power ZVS Class-D Development Board
Revision 2.0
QUICK START GUIDE
EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2018 | | 2
EPC9065
DESCRIPTION
The EPC9065 is a high efficiency, Zero Voltage Switching (ZVS) differential
mode Class-D amplifier development board that operates at, but is not
limited to, 6.78 MHz (Lowest ISM band). The purpose of this development
board is to simplify the evaluation process of a high power ZVS Class-D
amplifier for use in applications such as A4WP wireless power using
eGaN® FETs by including all the critical components on a single board
that can be easily connected into an existing system. To support the
increased power capability, two mounted heat sinks are included.
The amplifier board features the EPC2007C and the EPC2038, which
are 100 V rated enhancement-mode gallium nitride FETs (eGaN® FET).
The EPC2007C is used in the Class-D amplifier while the EPC2038 is used
as a synchronous bootstrap FET. The amplifier can be set to operate in
either differential mode or single ended mode and includes the gate
drivers and 6.78 MHz oscillator.
For more information on the EPC2007C or EPC2038 eGaN FETs
please refer to the datasheet available from EPC at www.epc-co.com.
The datasheet should be read in conjunction with this quick start guide.
Table 1: Performance Summary (TA = 25°C) EPC9065
Symbol Parameter Conditions Min Max Units
VDD
Logic Input Voltage Range
7.5 12 V
VAMP
Amp Input Voltage Range
0 80 V
VOUTA
Switch Node Output Voltage
80 V
VOUTB
Switch Node Output Voltage
80 V
IOUT
Switch Node Output Current (each)
1.8* ARMS
Vextosc
External Oscillator Input Threshold Input ‘Low’
Input ‘High’
-0.3
3.5
0.8
5
V
V
VOsc_Disable
Oscillator Disable Voltage Range Open drain/
collector
-0.3 5 V
IOsc_Disable
Oscillator Disable Current Open drain/
collector
-25 25 mA
DETAILED DESCRIPTION
The EPC9065 consists of a differential mode ZVS Class-D amplifier, a 6.78
MHz oscillator, and a separate heat sink for each Class-D section. The
power schematic of the EPC9065 is shown in figure 1.
For operating frequencies other than 6.78 MHz, the oscillator can be
disabled by placing a jumper into J60 or can be externally shutdown
using an externally controlled open collector / drain transistor on the
terminals of J60 (note which is the ground connection). The oscillator
disable switch needs to be capable of sinking at least 25 mA. The
external oscillator can then be connected to J71.
ZVS Timing Adjustment
Setting the correct time to establish ZVS transitions is critical to achieving
high efficiency with the EPC9065 amplifier. This can be done by selecting
the values for R71, R72, R73, and R74 respectively. This procedure is best
performed using a potentiometer installed at the appropriate locations
(P71, P72, P73, and P74) that is used to determine the fixed resistor values.
The timing MUST initially be set without a load connected to the amplifier.
The timing diagrams are given in figure 4 and should be referenced when
following this procedure. Only perform these steps if changes have been
made to the board as it is shipped preset. The steps are:
1. With power off, connect the logic input supply (7.5 - 12 V) to VDD connector
(J90). Note the polarity of the supply connector.
2. Connect a LOW capacitance oscilloscope probe to the probe-hole of
the half-bridge to be set and lean it against the ground post as shown in
figure 3.
3. Turn on the logic supply – make sure the supply is set to approximately
7.5 - 12 V.
4. Turn on the main supply voltage to 5 V to ensure that the switch node
waveform looks similar to figure 4. If not, adjust the potentiometers.
After verification, the main supply voltage can be set to the required
predominant operating value (such as 24 V but NEVER exceed the
absolute maximum voltage of 80 V).
5. While observing the oscilloscope, adjust the applicable potentiometers
to achieve the green waveform of figure 4.
6. Repeat for the other half-bridge.
7. Replace the potentiometers with fixed value resistors if required.
* Maximum current depends on die temperature – actual maximum current will be subject to switching
frequency, bus voltage and thermals.
Figure 1: Power schematic of the EPC9065 differential mode ZVS amplifier
+Q1
LZVS12
Q2
Q11
Q12
LZVS2
CZVS1
LZVS1
Coil connection
VIN
CZVS2
Determining comgonent values for szs T n v inductance for LZVSx which needs to be sufficient to maintain ZVS operation 0 a A! 8-f-(2-C +C) W A f C C u as charge V V7 To the val the de n ti - (c) m mi; ”may“ alumna: zvs obs D 069065
QUICK START GUIDE
EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2018 | | 3
EPC9065
Determining component values for LZVS
The ZVS tank circuit is not operated at resonance, and only provides the
necessary negative device current for self-commutation of the output
voltage at turn off. The capacitors CZVS1 and CZVS2 are chosen to have a very
small ripple voltage component and are typically around 1 µF. The amplifier
supply voltage, switch-node transition time will determine the value of
inductance for LZVSx which needs to be sufficient to maintain ZVS operation
over the DC device load resistance range and coupling between the device
and source coil range and can be calculated using the following equation:
(1)
Where:
Δtvt = Voltage Transition Time [s]
ƒsw = Operating Frequency [Hz]
COSSQ = Charge Equivalent Device Output Capacitance [F]
Cwell = Gate Driver Well Capacitance [F]. For the LM5113, use 20 pF.
NOTE. The amplifier supply voltage VAMP is absent from the equation as
it is accounted for by the voltage transition time. The per device charge
equivalent capacitance can be determined using the following equation:
(2)
To add additional immunity margin for shifts in load impedance, the
value of LZVS can be decreased to increase the current at turn off of the
devices (which will increase device losses). Typical voltage transition
times range from 2 ns through 12 ns. For the differential case the voltage
and charge (COSSQ) are doubled when calculating the ZVS inductance.
QUICK START PROCEDURE
The EPC9065 amplifier board is easy to set up and evaluate the
performance of the eGaN FET in a wireless power transfer application.
Please note that main power is connected directly to the amplifier.
Hence, there is no thermal or over-current protection to ensure the
correct operating conditions for the eGaN FETs. If the main power is
sourced from a benchtop DC power supply, it is highly advised to set a
reasonable current limit of 500 – 800 mA during initial evaluation.
1. Make sure the entire system, including the heat sink assembly, is fully
assembled prior to making electrical connections. This includes any
load to be connected.
2. With power off, connect the main input power supply bus to the
bottom pin of J50 and the ground to the ground connection of J50
as shown in figure 2.
3. With power off, connect the logic input power supply bus to +VDD
(J90). Note the polarity of the supply connector. This is used to power
the gate drivers and logic circuits.
4. Make sure all instrumentation is connected to the system.
5. Turn on the logic supply – make sure the supply is between 7.5 - 12 V.
6. Turn on the main supply voltage, starting at 0 V and increasing slowly
to the required value (it is recommended to start at 5 V for dead time
tuning purposes and do not exceed the absolute maximum voltage
of 80 V).
7. Once operation has been confirmed, adjust the main supply
voltage within the operating range and observe the output voltage,
efficiency and other parameters on both the amplifier and device
boards.
8. For shutdown, please follow steps in the reverse order. Start by
reducing the main supply voltage to 0 V followed by steps 6 through 2.
NOTE. When measuring the high frequency content switch-node
(Source Coil Voltage), care must be taken to avoid long ground leads. An
oscilloscope probe connection (preferred method) has been built into the
board to simplify the measurement of the Source Coil Voltage (shown in
figure 3).
For more information on measurement techniques, please refer
to Application Note AN023: Accurately Measuring High Speed GaN
Transistors.
EPC9065 amplifier board with heat sink photo
LZVS =
Δt
vt
8 · fsw · (2 · COSSQ + Cwell )
COSSQ = 1
V
AMP
COSS (v) · dv
0
V
AMP
·
; Differential x l ZVS Class ‘ 2 5393065
QUICK START GUIDE
EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2018 | | 4
EPC9065
Figure 2: Proper connection and measurement setup for the amplifier board
Figure 3: Proper measurement of the switch nodes
External
oscillator
input
(optional)
+
Disable
pre-regulator
jumper
7.5 -12 VDC Gate drive and
control supply
(note polarity)
Amplifier
timing setting
(not installed)
+
V supply
(note polarity)
IN
0 -80 VDC
Ground post
Switch-node main
oscilloscope probe
Amplifier board – Front-side
w «H M ZVS + Dinde (nndumnn Inner mas‘flnx Shim an over M0 Ql mnvnn
QUICK START GUIDE
EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2018 | | 5
EPC9065
THERMAL CONSIDERATIONS
The EPC9065 development board showcases the EPC2007C and EPC2038
eGaN FETs in a ZVS Class-D amplifier application. Although the electrical
performance surpasses that of traditional silicon devices, their relatively
smaller size does magnify the thermal management requirements. The
operator must observe the temperature of the gate driver and eGaN
FETs to ensure that both are operating within the thermal limits as per
the datasheets.
A heat sink kit is mounted on each half bridge of the EPC9065 board.
Figure 5 shows the assembly order for the heat sink kit.
NOTE. The EPC9065 development board has no current protection on board and care
must be exercised not to over-current or over-temperature the devices. Excessively wide
coil coupling and load range variations can lead to increased losses in the devices.
Precautions
The EPC9065 development board has no controller or enhanced
protection systems and therefore should be operated with caution.
Some specific precautions are:
1. It is highly advised to set a reasonable current limit of 500 - 800 mA
during initial evaluation.
2. Ensure that the gap pad included in the heat sink assembly is firmly
compressed on the eGaN FETs prior to full power operation. Be careful
not to damage the die by over-tightening of the bolts.
3. Please contact EPC at info@epc-co.com should there be questions
regarding specific load range impedance requirements.
Figure 4: ZVS timing diagrams
Figure 5: Heat sink kit assembly
Shoot-
through
Shoot-
through
Q2 turn-on
Q1 turn-off
VAMP
0
time
ZVS
ZVS + Diode
Conduction
ZVS + Diode
Conduction
Q1 turn-on
Q2 turn-off
VAMP
0
time
ZVS
Partial
ZVS
Partial
ZVS
2–56 x 1/2 inch
nylon screw
Cross-section
plane
Mounting holes
center line
EPC die
2–56 nylon
hex nut
Heat sink shim
Thermal interface material
for device 15 mm x 15 mm.
adhesive on both sides
of thermal pad
OPTIONAL interface frame
heat sink rests on frame
(thickness = die thickness)
Heat sink
(15 mm x 15 mm x 14.5 mm)
QUICK START GUIDE
EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2018 | | 6
EPC9065
Table 2: Bill of Materials - Amplifier Board
Item Qty Reference Part Description Manufacturer Part Number
1 8 C1, C2, C3, C4, C11, C12, C13, C14 10 nF, 100 V
TDK
C1005X7S2A103K050BB
2 2 C1_1, C1_2 4.7 μF, 10 V
Samsung
CL05A475MP5NRNC
3 11 C2_1, C2_2, C4_1, C4_2, C5_1, C5_2, C60, C71, C72, C73, C74 100 nF, 25 V
Murata
GRM155R71C104KA88D
4 2 C3_1, C3_2 22 nF, 25 V
TDK
C1005X7R1E223K050BB
5 4 C5, C6, C15, C16 2.2 μF 100 V
Taiyo Yuden
HMK325B7225KN-T
6 4 C42, C43, C46, C47 22 pF, 50 V
KemΩt
C0402C220J5GACTU
7 3 C90, C91, C92 1 μF, 25 V
TDK
C1608X7R1E105K
8 2 Czvs1, Czvs2 1 μF 50 V
Taiyo Yuden
C2012X7R1H105K125AB
9 2 D1_1, D1_2 40 V 300 mA
ST
BAT54KFILM
10 8 D2_1, D2_2, D3_1, D3_2, D71, D72, D73, D74 40 V 30 mA
Diodes Inc.
SDM03U40
11 2 D4_1, D4_2 5 V1, 150 mΩ
Bournes
CD0603-Z5V1
12 1 J1 SMA Board Edge
Linx
CONREVSMA013.062
13 1 J50 .156" Male Vert.
Würth
645002114822
14 3 J60, J71, J90 .1" Male Vert.
Würth
61300211121
15 2 Lzvs1b, Lzvs2b 390 nH
CoilCraft
2929SQ-391JEB
16 4 Q1, Q2, Q11, Q12 100 V 6A 30 mΩ
EPC
EPC2007C
17 2 Q4_1, Q4_2 100 V 2800 mΩ
EPC
EPC2038
18 4 R1, R2, R11, R12 2.2 Ω Yageo RC0402JR-072R2L
19 2 R2_1, R2_2 20 Ω Stackpole RMCF0402JT20R0
20 2 R3_1, R3_2 2.7 k
Panasonic
ERJ-2GEJ272X
21 2 R4_1, R4_2 4.7 Ω
Panasonic ERJ-2GEJ4R7X
22 1 R60 47 k
Stackpole RMCF0603JT47K0
23 2 R71, R74 470 Ω
Stackpole
RMCF0603FT470R
24 2 R72, R73 390 Ω
Stackpole RMCF0603FT390R
25 1 R75 10 k
Yageo RC0603JR-0710KL
26 2 R76, R77 0 Ω
Yageo RC0402JR-070RL
27 2 TP1, TP2 SMD probe loop
Keystone 5015
28 2 U1_1, U1_2 100 V eGaN Driver
National Semiconductor LM5113TM
29 1 U60 Pgm Osc.
EPSON SG-8002CE
30 2 U71, U73 2 In AND
Fairchild NC7SZ08L6X
31 2 U72, U74 2 In NAND
Fairchild NC7SZ00L6X
32 1 U90 5.0 V 250 mA DFN
Microchip MCP1703T-5002E/MC
Table 3: Optional Components
Item Qty Reference Part Description Footprint
1 2 Lzvs1a, Lzvs2a Aircore inductor CoilCraft 2222SQ
2 4 P71, P72, P73, P74 1 k Multi-turn potentiometer PV37W
3 2 GP1, GP2 .1" Male Vertical Header SIP1.1
EPC would like to acknowledge Coilcraft (www.coilcraft.com) and KDS Daishinku America (www.kdsamerica.com) for their support of this project.
QUICK START GUIDE
EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2018 | | 7
EPC9065
Figure 6: EPC9065 - Gate Driver Schematic
GUH
5 VHS
5 VHS
5 V
GLH
Gate Driver
U1
L M5113TM
GUR
L in
GUR
Hin
GUL
GLL
Q4
EPC2038
100 V 2800 mΩ
D1
BAT54K FI L M
4.7 Ω
1 2
R4
C2
5 V
4.7 V
4.7 V
GL H
20 Ω
12
R2
D3 Synchronous Bootstrap Power Supply
SDM03U40
100 nF , 25 V
100 nF , 25 V
100 nF , 25 V
C5
4.7 μF , 10 V
C1
D4
CD0603-Z5V1
Gbtst
2.7 K
12
R3
D2
SDM03U40
22 nF, 25 V
C3
Hin
L in
GND
5 V
GUH
GUL
GUR
5 VHS
GL H
GL L
C4
QUICK START GUIDE
EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2018 | | 8
EPC9065
Figure 7: EPC9065 – ZVS Class D Schematic
2 Ω 2
1 2
R1
GRH1
GRL 1
5 VHS1
5 V
GL H1
GL L1
Gate Driver
GRH1 GRL 1
GL L1GL H1
OutA
2.2 μF, 100 V
C5
Q1
EPC2007C
EPC2007C
EPC2007C
EPC2007C
Q2
D71
D72
5 V
5 V
5 V
10 K
12
R75
Deadtime Left
Deadtime Right
DNP 1K
P72
DNP 1K
P71
A
B
U72
NC7SZ00L6X
A
B
Y
U71
NC7SZ08L6X
5 V
1 2
R72
470 Ω
390 Ω
390 Ω
470 Ω
1 2
R71
42
GND
OUT3
Pgm Osc.
OE
1VCC
U60
100 nF , 25 V
C60
5 V
5 V
Oscillator
Osc
5 V
GRH2
GRL2
5 VHS2
5 V
GL H2
GL L2
Gate Driver
L_Sig2
H_Sig2
GRH2 GRL2
GLL2GL H2
Q11
Q12
5 V
.1" Male Ve rt.
1
2
J90
7.5
V DC - 12 VDC
Logic Supply Regulator
VDD
1 μF, 25 V 1 μF, 25 V
100 nF, 25 V
100 nF, 25 V
100 nF, 25 V
100 nF, 25 V
C75
DNP 100 pF, 25 V
1 μF, 25 V
C90 C91
V7 in
5.0 V 250 mA DFN
OUT
GN D
IN
GN D
U90
C92
Logic Supply
OutA
OutB
47 k
1
2
R60
OSC
OSC
OSC
.1" Male Vert.
1
2
J60
Oscillator Disable
OutB
L_Sig1
H_Sig1
Czvs1
Main Amplifier
Secondary Amplifier
DNP 270 nH
L zvs1a
DNP 270 nH
L zvs2a
ZVS
Tank
Circuit
1
2
.156" M ale Vert.
J50
Main Supply
VampVampVampVamp
Vamp
Vamp
Vamp
Vamp
VampVamp
SM A Board Edge
J1
H_Sig1
L_Sig1
.1" Male Vert.
1
2
J71
Oscillator Output
Osc
1
.1" Male Vert.
.1" Male Vert.
GP1
EMPTY
EMPTY
1
PH2
1
ProbeHole
ProbeHole
PH1
Ground Post
SMD probe loop
SMD probe loop
1
TP1
1
TP2
0 V ~ 80 V 4 A max
C6
C15
C16
5 VHS
5 V
GUH
GND
L in
GUL
GUR
GL H
GL L
Hin
1
C42
40 V, 30 mA
D73
SDM03U40
40 V, 30 mA
SDM03U40
40 V, 30 mA
SDM03U40
40 V, 30 mA
SDM03U40
D74
5 V
5 V
5 V
Deadtime Left
Deadtime Right
DNP 1K
P74
DNP 1K
P73
A
B
U74
NC7SZ00L6X
A
B
Y
U73
NC7SZ08L6X
5 V
1 2
R74
1 2
R73
OSC
OSC
H_Sig2
L_Sig2
5 VHS
5 V
GUH
GND
L in
GUL
GUR
GL H
GL L
Hin
2
HighEffGateDrvr_r1_0.SchDoc
HighEffGateDrvr_r1_0.SchDoc
1
GP2
Ground Post
390 nH
L zvs1b
390 nH
L zvs2b
Czvs2
HS 2
HS- 15 mm x 15 mm WMount
HS- 15 mm x 15 mm WMount
HS 1
10 nF, 100 V 10 nF, 100 V
2.2 μF, 100 V
1 μF, 50 V
1 μF, 50 V
10 nF, 100 V 10 nF, 100 V
VampVampVamp
VampVampVamp
2.2 μF, 100 V
10 nF, 100 V 10 nF, 100 V
2.2 μF, 100 V
10 nF, 100 V 10nF, 100 V
C1 C2
C3 C4
C11 C12
C13 C14
2 Ω 2
1 2
R2
2 Ω 2
1 2
R11
2 Ω 2
1 2
R12
C43
C46
22 pF, 50 V
22 pF, 50 V
22 pF, 50 V
22 pF, 50 V
C47
0 Ω
1 2
R76
0 Ω
1 2
R77
C74
C73
C72
C71
EFFIEIENT POWER (ONVERSION l
Demonstration Board Notification
The EPC9065 board is intended for product evaluation purposes only and is not intended for commercial use. Replace components on the Evaluation Board only with those parts shown on
the parts list (or Bill of Materials) in the Quick Start Guide. Contact an authorized EPC representative with any questions.
This board is intended to be used by certified professionals, in a lab environment, following proper safety procedures. Use at your own risk.
As an evaluation tool, this board is not designed for compliance with the European Union directive on electromagnetic compatibility or any other such directives or regulations. As board
builds are at times subject to product availability, it is possible that boards may contain components or assembly materials that are not RoHS compliant. Efficient Power Conversion Corpora-
tion (EPC) makes no guarantee that the purchased board is 100% RoHS compliant.
The evaluation board (or kit) is for demonstration purposes only and neither the Board nor this Quick Start Guide constitute a sales contract or create any kind of warranty, whether express
or implied, as to the applications or products involved.
Disclaimer: EPC reserves the right at any time, without notice, to make changes to any products described herein to improve reliability, function, or design. EPC does not assume any liability
arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, or other intellectual property whatsoever, nor the
rights of others.
EPC Products are distributed through Digi-Key.
www.digikey.com
For More Information:
Please contact info@epc-co.com
or your local sales representative
Visit our website:
www.epc-co.com
Sign-up to receive
EPC updates at
bit.ly/EPCupdates
or text “EPC to 22828