Infineon Technologiesが提供するIPD60R1K5CE, IPU60R1K5CEのデータシート

O 0 Table 1 Key Performance Parameters
1
IPD60R1K5CE,IPU60R1K5CE
2016-03-31Final Data Sheet
tab
1
2
3
DPAK
12
tab
3
IPAK
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
MOSFET
600VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter Value Unit
VDS @ Tj,max 650 V
RDS(on),max 1500 m
Id. 5 A
Qg.typ 9.4 nC
ID,pulse 8 A
Eoss@400V 1 µJ
Type/OrderingCode Package Marking RelatedLinks
IPD60R1K5CE PG-TO 252
IPU60R1K5CE PG-TO 251 60S1K5CE see Appendix A
(imeon
2
600VCoolMOSªCEPowerTransistor
IPD60R1K5CE,IPU60R1K5CE
2016-03-31Final Data Sheet
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
(imeon Table 2 Maximum ratings TableS Thermal characteristics TO-251,T0252
3
600VCoolMOSªCEPowerTransistor
IPD60R1K5CE,IPU60R1K5CE
2016-03-31Final Data Sheet
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Continuous drain current1) ID-
-
-
-
5
3.2 ATC=25°C
TC=100°C
Pulsed drain current2) ID,pulse - - 8 A TC=25°C
Avalanche energy, single pulse EAS - - 26 mJ ID=0.6A; VDD=50V; see table 11
Avalanche energy, repetitive EAR - - 0.09 mJ ID=0.6A; VDD=50V; see table 11
Avalanche current, repetitive IAR - - 0.6 A -
MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...480V
Gate source voltage (static) VGS -20 - 20 V static;
Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz)
Power dissipation
TO-251, TO252 Ptot - - 49 W TC=25°C
Storage temperature Tstg -40 - 150 °C -
Operating junction temperature Tj-40 - 150 °C -
Continuous diode forward current IS- - 3.5 A TC=25°C
Diode pulse current2) IS,pulse - - 8 A TC=25°C
Reverse diode dv/dt3) dv/dt - - 15 V/ns VDS=0...400V,ISD<=IS,Tj=25°C
see table 9
Maximum diode commutation speed dif/dt - - 500 A/µsVDS=0...400V,ISD<=IS,Tj=25°C
see table 9
2Thermalcharacteristics
Table3ThermalcharacteristicsTO-251,TO252
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Thermal resistance, junction - case RthJC - - 2.57 °C/W -
Thermal resistance, junction - ambient RthJA - - 62 °C/W leaded
Soldering temperature, wavesoldering
only allowed at leads Tsold - - 260 °C 1.6mm (0.063 in.) from case for 10s
1) Limited by Tj max. Maximum duty cycle D=0.50
2) Pulse width tp limited by Tj,max
3)IdenticallowsideandhighsideswitchwithidenticalRG
(Iniineon Table 4 Static characteristics Table 5 Dynamic characteristics Table 6 Gate char e characteristics
4
600VCoolMOSªCEPowerTransistor
IPD60R1K5CE,IPU60R1K5CE
2016-03-31Final Data Sheet
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0V,ID=0.25mA
Gate threshold voltage V(GS)th 2.5 3.0 3.5 V VDS=VGS,ID=0.09mA
Zero gate voltage drain current IDSS -
-
-
10
1
-µAVDS=600,VGS=0V,Tj=25°C
VDS=600,VGS=0V,Tj=150°C
Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V
Drain-source on-state resistance RDS(on) -
-
1.26
3.28
1.50
-VGS=10V,ID=1.1A,Tj=25°C
VGS=10V,ID=1.1A,Tj=150°C
Gate resistance RG- 14 - f=1MHz,opendrain
Table5Dynamiccharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Input capacitance Ciss - 200 - pF VGS=0V,VDS=100V,f=1MHz
Output capacitance Coss - 16 - pF VGS=0V,VDS=100V,f=1MHz
Effective output capacitance,
energy related1) Co(er) - 11 - pF VGS=0V,VDS=0...480V
Effective output capacitance,
time related2) Co(tr) - 41.3 - pF ID=constant,VGS=0V,VDS=0...480V
Turn-on delay time td(on) - 8 - ns VDD=400V,VGS=10V,ID=1.4A,
RG=12.2;seetable10
Rise time tr- 7 - ns VDD=400V,VGS=10V,ID=1.4A,
RG=12.2;seetable10
Turn-off delay time td(off) - 40 - ns VDD=400V,VGS=10V,ID=1.4A,
RG=12.2;seetable10
Fall time tf- 20 - ns VDD=400V,VGS=10V,ID=1.4A,
RG=12.2;seetable10
Table6Gatechargecharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Gate to source charge Qgs - 1.1 - nC VDD=480V,ID=1.4A,VGS=0to10V
Gate to drain charge Qgd - 5 - nC VDD=480V,ID=1.4A,VGS=0to10V
Gate charge total Qg- 9.4 - nC VDD=480V,ID=1.4A,VGS=0to10V
Gate plateau voltage Vplateau - 5.4 - V VDD=480V,ID=1.4A,VGS=0to10V
1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%Vo(BR)DSS
2)Co(tr)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%Vo(BR)DSS
(imeon Table 7 Reverse diode characteristics
5
600VCoolMOSªCEPowerTransistor
IPD60R1K5CE,IPU60R1K5CE
2016-03-31Final Data Sheet
Table7Reversediodecharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Diode forward voltage VSD - 0.9 - V VGS=0V,IF=1.4A,Tj=25°C
Reverse recovery time trr - 230 - ns VR=400V,IF=1.4A,diF/dt=100A/µs;
see table 9
Reverse recovery charge Qrr - 1.1 - µC VR=400V,IF=1.4A,diF/dt=100A/µs;
see table 9
Peak reverse recovery current Irrm - 9.8 - A VR=400V,IF=1.4A,diF/dt=100A/µs;
see table 9
(ifileon
6
600VCoolMOSªCEPowerTransistor
IPD60R1K5CE,IPU60R1K5CE
2016-03-31Final Data Sheet
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation(NonFullPAK)
TC[°C]
Ptot[W]
0 25 50 75 100 125 150
0
5
10
15
20
25
30
35
40
45
50
Ptot=f(TC)
Diagram2:Safeoperatingarea(NonFullPAK)
VDS[V]
ID[A]
100101102103
10-3
10-2
10-1
100
101
1 µs
10 µs
100 µs
1 ms
DC
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram3:Safeoperatingarea(NonFullPAK)
VDS[V]
ID[A]
100101102103
10-3
10-2
10-1
100
101
1 µs
10 µs
100 µs
1 ms
DC
ID=f(VDS);TC=80°C;D=0;parameter:tp
Diagram4:Max.transientthermalimpedance(NonFullPAK)
tp[s]
ZthJC[K/W]
10-5 10-4 10-3 10-2 10-1
10-2
10-1
100
101
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
ZthJC=f(tP);parameter:D=tp/T
(ifileon \\ \\\\ \\
7
600VCoolMOSªCEPowerTransistor
IPD60R1K5CE,IPU60R1K5CE
2016-03-31Final Data Sheet
Diagram5:Typ.outputcharacteristics
VDS[V]
ID[A]
0 5 10 15 20
0
1
2
3
4
5
6
7
8
9
20 V
10 V
8 V
7 V
6 V
5.5 V
5 V
4.5 V
ID=f(VDS);Tj=25°C;parameter:VGS
Diagram6:Typ.outputcharacteristics
VDS[V]
ID[A]
0 5 10 15 20
0
1
2
3
4
5
6
20 V
10 V
8 V
7 V
6 V
5.5 V
5 V
4.5 V
ID=f(VDS);Tj=125°C;parameter:VGS
Diagram7:Typ.drain-sourceon-stateresistance
ID[A]
RDS(on)[]
0 1 2 3 4 5 6
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
5V 5.5V 6V 6.5 V 7 V
10 V
RDS(on)=f(ID);Tj=125°C;parameter:VGS
Diagram8:Drain-sourceon-stateresistance
Tj[°C]
RDS(on)[]
-50 -25 0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
98% typ
RDS(on)=f(Tj);ID=1.1A;VGS=10V
(ifileon
8
600VCoolMOSªCEPowerTransistor
IPD60R1K5CE,IPU60R1K5CE
2016-03-31Final Data Sheet
Diagram9:Typ.transfercharacteristics
VGS[V]
ID[A]
0 2 4 6 8 10 12
0
1
2
3
4
5
6
7
8
9
150 °C
25 °C
ID=f(VGS);VDS=20V;parameter:Tj
Diagram10:Typ.gatecharge
Qgate[nC]
VGS[V]
0 1 2 3 4 5 6 7 8 9 10
0
1
2
3
4
5
6
7
8
9
10
480 V
120 V
VGS=f(Qgate);ID=1.4Apulsed;parameter:VDD
Diagram11:Forwardcharacteristicsofreversediode
VSD[V]
IF[A]
0.0 0.5 1.0 1.5 2.0
10-1
100
101
102
25 °C
125 °C
IF=f(VSD);parameter:Tj
Diagram12:Avalancheenergy
Tj[°C]
EAS[mJ]
25 50 75 100 125 150
0
5
10
15
20
25
30
EAS=f(Tj);ID=0.6A;VDD=50V
(ifileon
9
600VCoolMOSªCEPowerTransistor
IPD60R1K5CE,IPU60R1K5CE
2016-03-31Final Data Sheet
Diagram13:Drain-sourcebreakdownvoltage
Tj[°C]
VBR(DSS)[V]
-75 -50 -25 0 25 50 75 100 125 150 175
520
540
560
580
600
620
640
660
680
700
VBR(DSS)=f(Tj);ID=0.25mA
Diagram14:Typ.capacitances
VDS[V]
C[pF]
0 100 200 300 400 500
100
101
102
103
104
Ciss
Coss
Crss
C=f(VDS);VGS=0V;f=1MHz
Diagram15:Typ.Cossstoredenergy
VDS[V]
Eoss[µJ]
0 100 200 300 400 500
0.0
0.5
1.0
1.5
Eoss=f(VDS)
(imeon
10
600VCoolMOSªCEPowerTransistor
IPD60R1K5CE,IPU60R1K5CE
2016-03-31Final Data Sheet
5TestCircuits
Table8Diodecharacteristics
Test circuit for diode characteristics Diode recovery waveform
t
V ,I
Irrm
IF
VDS
10 %Irrm
trr
tFtS
Q
FQ
S
dIF/ dt
dIrr / dt
VDS(peak)
Q
rr = QF+ Q
S
trr =tF+tS
VDS
IF
VDS
IF
Rg1
Rg2
Rg1 = Rg2
Table9Switchingtimes
Switching times test circuit for inductive load Switching times waveform
VDS
VGS
td(on) td(off)
tr
ton
tf
toff
10%
90%
VDS
VGS
Table10Unclampedinductiveload
Unclamped inductive load test circuit Unclamped inductive waveform
VDS
V(BR)DS
ID
VDS
VDS
ID
(imeon L3 E F2 F3 H F6 F5
11
600VCoolMOSªCEPowerTransistor
IPD60R1K5CE,IPU60R1K5CE
2016-03-31Final Data Sheet
6PackageOutlines
2.0
ISSUE DATE
EUROPEAN PROJECTION
0
4mm
2.0
SCALE 0
REVISION
01-09-2015
05
DOCUMENT NO.
Z8B00003328
*) mold flash not included
MILLIMETERS
4.57 (BSC)
2.29 (BSC)
L4
D
N
H
E1
e1
e
E
D1
L3
1.18
0.51
0.90
5.02
9.40
6.40
4.70
5.97
3
b3
A
DIM
b2
c
b
c2
A1
5.00
MIN
2.16
0.64
0.46
0.65
0.46
0.00
0.046
0.020
0.035
0.198
0.252
0.185
0.235
0.370
1.70
1.00
5.60
5.84
6.22
6.73
1.25
10.48
0.180 (BSC)
0.090 (BSC)
3
0.067
0.220
0.039
0.230
0.265
0.049
0.245
0.413
0.197
0.085
0.025
0.018
0.026
0.018
0.000
5.50
MAX
2.41
0.15
1.15
0.60
0.89
0.98
INCHES
MIN
0.217
MAX
0.006
0.095
0.035
0.024
0.045
0.039
L
F6
F1
F2
F3
F4
F5
1.20
6.40
10.60
2.20
5.80
5.76
0.417
0.252
0.087
0.228
0.227
0.047
Figure1OutlinePG-TO252,dimensionsinmm/inches
@
12
600VCoolMOSªCEPowerTransistor
IPD60R1K5CE,IPU60R1K5CE
2016-03-31Final Data Sheet
33N
L2
L8.89
0.89 0.035
0.3509.65
1.37 0.054
0.380
4.57
2.29
MILLIMETERS
A1
b4
b2
b
A
DIM
D1
E
E1
c2
D
e1
e
c
0.90
2.16
0.64
0.65
4.95
MIN
0.46
5.97
5.04
6.35
4.70
0.46
0.035
0.025
0.085
0.185
0.250
0.198
0.235
0.018
0.018
0.195
0.026
1.14
0.89
2.41
1.15
5.50
MAX
0.89
6.22
5.77
6.73
5.21
0.60
INCHES
0.180
0.090
MIN
0.045
0.035
MAX
0.095
0.205
0.265
0.227
0.245
0.035
0.024
0.217
0.045
TO251-3-21/-341/-345
2.0
EUROPEAN PROJECTION
ISSUE DATE
SCALE
0
4mm
0
2.0
REVISION
31-08-2015
04
DOCUMENT NO.
Z8B00003330
0.85 0.0332.29 0.090L1
Figure2OutlinePG-TO251,dimensionsinmm/inches
Infineon www.infineon.com www.infineon.com www.infineon.com www 'nfineo com
13
600VCoolMOSªCEPowerTransistor
IPD60R1K5CE,IPU60R1K5CE
2016-03-31Final Data Sheet
7AppendixA
Table11RelatedLinks
IFXCoolMOSTMCEWebpage:www.infineon.com
IFXCoolMOSTMCEapplicationnote:www.infineon.com
IFXCoolMOSTMCEsimulationmodel:www.infineon.com
IFXDesigntools:www.infineon.com
(imeon
14
600VCoolMOSªCEPowerTransistor
IPD60R1K5CE,IPU60R1K5CE
2016-03-31Final Data Sheet
RevisionHistory
IPD60R1K5CE, IPU60R1K5CE
Revision:2016-03-31
Previous Revision
Date Subjects (major changes since last revision)
2014-09-25 Release of final version
2015-11-17 Updated to qualified for standard grade & updated package drawing
2016-03-31 Modified Id, Rthjc. Modified SOA, Zthjc curves
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