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MX25L25635F Datasheet

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Datasheet

MX25L25635F
P/N: PM1738
MX25L25635F
DATASHEET
2
MX25L25635F
REV. 1.2, AUG. 09, 2013P/N: PM1738
Contents
1. FEATURES .............................................................................................................................................................. 4
2. GENERAL DESCRIPTION ..................................................................................................................................... 6
Table 1. Read performance Comparison ....................................................................................................6
3. PIN CONFIGURATIONS ......................................................................................................................................... 7
4. PIN DESCRIPTION .................................................................................................................................................. 7
5. BLOCK DIAGRAM ................................................................................................................................................... 8
6. DATA PROTECTION ................................................................................................................................................ 9
Table 2. Protected Area Sizes ...................................................................................................................10
Table 3. 4K-bit Secured OTP Definition .................................................................................................... 11
7. Memory Organization ........................................................................................................................................... 12
Table 4. Memory Organization ..................................................................................................................12
8. DEVICE OPERATION ............................................................................................................................................ 13
8-1. 256Mb Address Protocol .......................................................................................................................... 15
8-2. Quad Peripheral Interface (QPI) Read Mode .......................................................................................... 16
9. COMMAND DESCRIPTION ................................................................................................................................... 17
Table 5. Command Set ..............................................................................................................................17
9-1. Write Enable (WREN) .............................................................................................................................. 22
9-2. Write Disable (WRDI) ............................................................................................................................... 23
9-3. Read Identification (RDID) ....................................................................................................................... 24
9-4. Release from Deep Power-down (RDP), Read Electronic Signature (RES) ........................................... 25
9-5. Read Electronic Manufacturer ID & Device ID (REMS) ........................................................................... 27
9-6. QPI ID Read (QPIID) ............................................................................................................................... 28
Table 6. ID Definitions ..............................................................................................................................28
9-7. Read Status Register (RDSR) ................................................................................................................. 29
9-8. Read Configuration Register (RDCR) ...................................................................................................... 30
Table 7. Configuration Register ................................................................................................................. 34
9-9. Write Status Register (WRSR) ................................................................................................................. 36
Table 8. Protection Modes .........................................................................................................................37
9-10. Enter 4-byte mode (EN4B) ...................................................................................................................... 40
9-11. Exit 4-byte mode (EX4B) ......................................................................................................................... 40
9-12. Read Data Bytes (READ) ........................................................................................................................ 41
9-13. Read Data Bytes at Higher Speed (FAST_READ) .................................................................................. 42
9-14. Dual Output Read Mode (DREAD) .......................................................................................................... 44
9-15. 2 x I/O Read Mode (2READ) ................................................................................................................... 45
9-16. Quad Read Mode (QREAD) .................................................................................................................... 46
9-17. 4 x I/O Read Mode (4READ) ................................................................................................................... 47
9-18. 4 Byte Address Command Set ................................................................................................................. 49
9-19. Burst Read ............................................................................................................................................... 51
9-20. Performance Enhance Mode ................................................................................................................... 52
9-21. Performance Enhance Mode Reset ......................................................................................................... 55
9-22. Fast Boot ................................................................................................................................................. 57
9-23. Sector Erase (SE) .................................................................................................................................... 60
9-24. Block Erase (BE32K) ............................................................................................................................... 61
9-25. Block Erase (BE) ..................................................................................................................................... 62
9-26. Chip Erase (CE) ....................................................................................................................................... 63
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9-27. Page Program (PP) ................................................................................................................................. 64
9-28. 4 x I/O Page Program (4PP) .................................................................................................................... 66
9-29. Deep Power-down (DP) ........................................................................................................................... 67
9-30. Enter Secured OTP (ENSO) .................................................................................................................... 68
9-31. Exit Secured OTP (EXSO) ....................................................................................................................... 68
9-32. Read Security Register (RDSCUR) ......................................................................................................... 68
9-33. Write Security Register (WRSCUR) ......................................................................................................... 68
Table 9. Security Register Definition .........................................................................................................69
9-34. Write Protection Selection (WPSEL) ........................................................................................................ 70
9-35. Advanced Sector Protection .................................................................................................................... 72
9-35-1. Lock Register ............................................................................................................................................................................. 73
9-35-2.SPB Lock Bit (SPBLB) ................................................................................................................................................................ 74
9-35-3.Solid Protection Bits .................................................................................................................................................................... 75
9-35-4.Dynamic Write Protection Bits ..................................................................................................................................................... 77
9-35-5.Temporary Un-protect Solid write protect bit (USPB) ................................................................................................................. 78
9-35-6.Gang Block Lock/Unlock (GBLK/GBULK) ................................................................................................................................... 78
9-35-7.Sector Protection States Summary Table.................................................................................................................................... 78
9-35-8.Password Protection Mode ......................................................................................................................................................... 79
9-36. Program/Erase Suspend/Resume ........................................................................................................... 80
9-37. Erase Suspend ........................................................................................................................................ 80
9-38. Program Suspend .................................................................................................................................... 80
9-39. Write-Resume .......................................................................................................................................... 82
9-40. No Operation (NOP) ................................................................................................................................ 82
9-41. Software Reset (Reset-Enable (RSTEN) and Reset (RST)) ................................................................... 82
9-42. Read SFDP Mode (RDSFDP) .................................................................................................................. 84
Table 10. Signature and Parameter Identification Data Values ................................................................ 85
Table 11. Parameter Table (0): JEDEC Flash Parameter Tables ..............................................................86
Table 12. Parameter Table (1): Macronix Flash Parameter Tables ...........................................................88
10. RESET.................................................................................................................................................................. 90
Table 13. Reset Timing-(Power On) ..........................................................................................................90
Table 14. Reset Timing-(Other Operation) ................................................................................................90
11. POWER-ON STATE ............................................................................................................................................. 91
12. ELECTRICAL SPECIFICATIONS ........................................................................................................................ 92
Table 16. ABSOLUTE MAXIMUM RATINGS ............................................................................................92
Table 17. CAPACITANCE TA = 25°C, f = 1.0 MHz .................................................................................... 92
Table 18. DC CHARACTERISTICS (Temperature = -40°C to 85°C, VCC = 2.7V ~ 3.6V) ....................... 94
Table 19. AC CHARACTERISTICS (Temperature = -40°C to 85°C, VCC = 2.7V ~ 3.6V) ......................95
13. OPERATING CONDITIONS ................................................................................................................................. 96
Table 20. Power-Up/Down Voltage and Timing ........................................................................................ 98
13-1. INITIAL DELIVERY STATE ...................................................................................................................... 98
14. ERASE AND PROGRAMMING PERFORMANCE .............................................................................................. 99
15. DATA RETENTION .............................................................................................................................................. 99
16. LATCH-UP CHARACTERISTICS ........................................................................................................................ 99
17. ORDERING INFORMATION .............................................................................................................................. 100
18. PART NAME DESCRIPTION ............................................................................................................................. 101
19. PACKAGE INFORMATION ................................................................................................................................102
20. REVISION HISTORY ......................................................................................................................................... 104
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1. FEATURES
GENERAL
Serial Peripheral Interface compatible -- Mode 0 and Mode 3
Single Power Supply Operation
- 2.7 to 3.6 volt for read, erase, and program operations
256Mb: 268,435,456 x 1 bit structure or 134,217,728 x 2 bits (two I/O mode) structure or 67,108,864 x 4 bits (four
I/O mode) structure
Protocol Support
- Single I/O, Dual I/O and Quad I/O
Latch-up protected to 100mA from -1V to Vcc +1V
Low Vcc write inhibit is from 2.3V to 2.5V
Fast read for SPI mode
- Support clock frequency up to 133MHz for all protocols
- Support Fast Read, 2READ, DREAD, 4READ, QREAD instructions.
- Configurable dummy cycle number for fast read operation
Quad Peripheral Interface (QPI) available
Equal Sectors with 4K byte each, or Equal Blocks with 32K byte each or Equal Blocks with 64K byte each
- Any Block can be erased individually
Programming :
- 256byte page buffer
- Quad Input/Output page program(4PP) to enhance program performance
Typical 100,000 erase/program cycles
20 years data retention
SOFTWARE FEATURES
Input Data Format
- 1-byte Command code
Advanced Security Features
- Block lock protection
The BP0-BP3 and T/B status bits define the size of the area to be protected against program and erase
instructions
- Advanced sector protection function (Solid and Password Protect)
Additional 4K bit security OTP
- Features unique identifier
- factory locked identifiable, and customer lockable
Command Reset
Program/Erase Suspend and Resume operation
Electronic Identification
- JEDEC 1-byte manufacturer ID and 2-byte device ID
- RES command for 1-byte Device ID
- REMS command for 1-byte manufacturer ID and 1-byte device ID
Support Serial Flash Discoverable Parameters (SFDP) mode
3V 256M-BIT [x 1/x 2/x 4] CMOS MXSMIO® (SERIAL MULTI I/O)
FLASH MEMORY
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HARDWARE FEATURES
SCLK Input
- Serial clock input
SI/SIO0
- Serial Data Input or Serial Data Input/Output for 2 x I/O read mode and 4 x I/O read mode
SO/SIO1
- Serial Data Output or Serial Data Input/Output for 2 x I/O read mode and 4 x I/O read mode
WP#/SIO2
- Hardware write protection or serial data Input/Output for 4 x I/O read mode
RESET#/SIO3
- Hardware Reset pin or Serial input & Output for 4 x I/O read mode
PACKAGE
- 16-pin SOP (300mil)
- 8-land WSON (8x6mm)
- All devices are RoHS Compliant and Halogen-free
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2. GENERAL DESCRIPTION
MX25L25635F is 256Mb bits serial Flash memory, which is configured as 33,554,432 x 8 internally. When it is in
two or four I/O mode, the structure becomes 134,217,728 bits x 2 or 67,108,864 bits x 4. MX25L25635F feature a
serial peripheral interface and software protocol allowing operation on a simple 3-wire bus while it is in single I/O
mode. The three bus signals are a clock input (SCLK), a serial data input (SI), and a serial data output (SO). Serial
access to the device is enabled by CS# input.
When it is in two I/O read mode, the SI pin and SO pin become SIO0 pin and SIO1 pin for address/dummy bits
input and data output. When it is in four I/O read mode, the SI pin, SO pin, WP# and RESET# pin become SIO0
pin, SIO1 pin, SIO2 pin and SIO3 pin for address/dummy bits input and data output.
The MX25L25635F
MXSMIO® (Serial Multi I/O)
provides sequential read operation on whole chip.
After program/erase command is issued, auto program/ erase algorithms which program/ erase and verify the
specified page or sector/block locations will be executed. Program command is executed on byte basis, or page (256
bytes) basis, or word basis for erase command is executed on sector (4K-byte), block (32K-byte), or block (64K-byte),
or whole chip basis.
To provide user with ease of interface, a status register is included to indicate the status of the chip. The status read
command can be issued to detect completion status of a program or erase operation via WIP bit.
Advanced security features enhance the protection and security functions, please see security features section for
more details.
When the device is not in operation and CS# is high, it is put in standby mode.
The MX25L25635F utilizes Macronix's proprietary memory cell, which reliably stores memory contents even after
100,000 program and erase cycles.
Table 1. Read performance Comparison
Numbers of
Dummy Cycles
Fast Read
(MHz)
Dual Output
Fast Read
(MHz)
Quad Output
Fast Read
(MHz)
Dual IO
Fast Read
(MHz)
Quad IO
Fast Read
(MHz)
4 - - - 84* 70
6 104 104 84 104 84*
8 104* 104* 104* 104 104
10 133 133 133 133 133
Note: * mean default status
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3. PIN CONFIGURATIONS 4. PIN DESCRIPTION
SYMBOL DESCRIPTION
CS# Chip Select
SI/SIO0
Serial Data Input (for 1 x I/O)/ Serial
Data Input & Output (for 2xI/O or 4xI/
O read mode)
SO/SIO1
Serial Data Output (for 1 x I/O)/ Serial
Data Input & Output (for 2xI/O or 4xI/
O read mode)
SCLK Clock Input
WP#/SIO2
Write protection: connect to GND or
Serial Data Input & Output (for 4xI/O
read mode)
RESET#/SIO3
Hardware Reset Pin Active low or
Serial Data Input & Output (for 4xI/O
read mode)
DNU/SIO3 Do not use or Serial Data Input &
Output (for 4xI/O read mode)
RESET#* Hardware Reset Pin Active low
VCC + 3V Power Supply
GND Ground
NC No Connection
16-PIN SOP (300mil)
1
2
3
4
5
6
7
8
DNU/SIO3
VCC
RESET#
NC
NC
NC
CS#
SO/SIO1
16
15
14
13
12
11
10
9
SCLK
SI/SIO0
NC
NC
NC
NC
GND
WP#/SIO2
8-WSON (8x6mm)
1
2
3
4
CS#
SO/SIO1
WP#/SIO2
GND
8
7
6
5
VCC
RESET#/SIO3
SCLK
SI/SIO0
Notes:
1. RESET# pin has internal pull up.
2. When using 1I/O or 2I/O (QE bit not enable), the
DNU/SIO3 pin of 16SOP can not connect to GND.
Recommend to connect this pin to VCC or floating.
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5. BLOCK DIAGRAM
Address
Generator
Memory Array
Page Buffer
Y-Decoder
X-Decoder
Data
Register
SRAM
Buffer
SI/SIO0
SCLK
SO/SIO1
Clock Generator
State
Machine
Mode
Logic
Sense
Amplifier
HV
Generator
Output
Buffer
CS#
WP#/SIO2
RESET#/SIO3
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6. DATA PROTECTION
During power transition, there may be some false system level signals which result in inadvertent erasure or
programming. The device is designed to protect itself from these accidental write cycles.
The state machine will be reset as standby mode automatically during power up. In addition, the control register
architecture of the device constrains that the memory contents can only be changed after specific command
sequences have completed successfully.
In the following, there are several features to protect the system from the accidental write cycles during VCC power-
up and power-down or from system noise.
Valid command length checking: The command length will be checked whether it is at byte base and completed
on byte boundary.
Write Enable (WREN) command: WREN command is required to set the Write Enable Latch bit (WEL) before
other command to change data.
Deep Power Down Mode: By entering deep power down mode, the flash device also is under protected from
writing all commands except Release from deep power down mode command (RDP) and Read Electronic
Signature command (RES), and softreset command.
Advanced Security Features: there are some protection and security features which protect content from
inadvertent write and hostile access.
I. Block lock protection
- The Software Protected Mode (SPM) use (BP3, BP2, BP1, BP0 and T/B) bits to allow part of memory to be
protected as read only. The protected area definition is shown as Table 2 Protected Area Sizes, the protected
areas are more flexible which may protect various area by setting value of BP0-BP3 bits.
- The Hardware Proteced Mode (HPM) use WP#/SIO2 to protect the (BP3, BP2, BP1, BP0) bits and Status
Register Write Protect bit.
- In four I/O and QPI mode, the feature of HPM will be disabled.
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Table 2. Protected Area Sizes
Status bit Protect Level
BP3 BP2 BP1 BP0 256Mb
0 0 0 0 0 (none)
0 0 0 1 1 (1 block, protected block 511st)
00102 (2 blocks, protected block 510th~511st)
00113 (4 blocks, protected block 508th~511st)
01004 (8 blocks, protected block 504th~511st)
01015 (16 blocks, protected block 496th~511st)
01106 (32 blocks, protected block 480th~511st)
01117 (64 blocks, protected block 448th~511st)
10008 (128 blocks, protected block 384th~511st)
10019 (256 blocks, protected block 256th~511st)
1 0 1 0 10 (512 blocks, protected all)
1 0 1 1 11 (512 blocks, protected all)
1 1 0 0 12 (512 blocks, protected all)
1 1 0 1 13 (512 blocks, protected all)
1 1 1 0 14 (512 blocks, protected all)
1 1 1 1 15 (512 blocks, protected all)
Status bit Protect Level
BP3 BP2 BP1 BP0 256Mb
0 0 0 0 0 (none)
0 0 0 1 1 (1 block, protected block 0th)
00102 (2 blocks, protected block 0th~1th)
00113 (4 blocks, protected block 0th~3rd)
01004 (8 blocks, protected block 0th~7th)
01015 (16 blocks, protected block 0th~15th)
01106 (32 blocks, protected block 0th~31st)
01117 (64 blocks, protected block 0th~63rd)
10008 (128 blocks, protected block 0th~127th)
10019 (256 blocks, protected block 0th~255th)
1 0 1 0 10 (512 blocks, protected all)
1 0 1 1 11 (512 blocks, protected all)
1 1 0 0 12 (512 blocks, protected all)
1 1 0 1 13 (512 blocks, protected all)
1 1 1 0 14 (512 blocks, protected all)
1 1 1 1 15 (512 blocks, protected all)
Protected Area Sizes (T/B bit = 1)
Protected Area Sizes (T/B bit = 0)
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II. Additional 4K-bit secured OTP for unique identifier: to provide 4K-bit one-time program area for setting
device unique serial number - Which may be set by factory or system customer.
- Security register bit 0 indicates whether the chip is locked by factory or not.
- To program the 4K-bit secured OTP by entering 4K-bit secured OTP mode (with Enter Security OTP command),
and going through normal program procedure, and then exiting 4K-bit secured OTP mode by writing Exit Security
OTP command.
- Customer may lock-down the customer lockable secured OTP by writing WRSCUR(write security register)
command to set customer lock-down bit1 as "1". Please refer to "Table 9. Security Register Definition" for
security register bit definition and "Table 3. 4K-bit Secured OTP Definition" for address range definition.
- Note: Once lock-down whatever by factory or customer, it cannot be changed any more. While in 4K-bit secured
OTP mode, array access is not allowed.
Table 3. 4K-bit Secured OTP Definition
Address range Size Standard Factory Lock Customer Lock
xxx000~xxx00F 128-bit ESN (electrical serial number) Determined by customer
xxx010~xxx1FF 3968-bit N/A
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Table 4. Memory Organization
7. Memory Organization
Block(32K-byte) Sector
8191 1FFF000h 1FFFFFFh
8184 1FF8000h 1FF8FFFh
8183 1FF7000h 1FF7FFFh
8176 1FF0000h 1FF0FFFh
8175 1FEF000h 1FEFFFFh
8168 1FE8000h 1FE8FFFh
8167 1FE7000h 1FE7FFFh
8160 1FE0000h 1FE0FFFh
8159 1FDF000h 1FDFFFFh
8152 1FD8000h 1FD8FFFh
8151 1FD7000h 1FD7FFFh
8144 1FD0000h 1FD0FFFh
47 002F000h 002FFFFh
40 0028000h 0028FFFh
39 027000h 0027FFFh
32 0020000h 0020FFFh
31 001F000h 001FFFFh
24 0018000h 0018FFFh
23 0017000h 0017FFFh
16 0010000h 0010FFFh
15 000F000h 000FFFFh
80008000h 0008FFFh
70007000h 0007FFFh
00000000h 0000FFFh
1020
1019
1018
Address Range
1023
1022
1021
individual block
lock/unlock unit:64K-byte
individual 16 sectors
lock/unlock unit:4K-byte
individual block
lock/unlock unit:64K-byte
individual block
lock/unlock unit:64K-byte
Block(64K-byte)
509
2
1
0
511
510
0
5
4
3
2
1
individual 16 sectors
lock/unlock unit:4K-byte
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8. DEVICE OPERATION
1. Before a command is issued, status register should be checked to ensure device is ready for the intended
operation.
2. When incorrect command is inputted to this device, this device becomes standby mode and keeps the standby
mode until next CS# falling edge. In standby mode, SO pin of this device should be High-Z.
3. When correct command is inputted to this device, this device becomes active mode and keeps the active mode
until next CS# rising edge.
4. Input data is latched on the rising edge of Serial Clock (SCLK) and data shifts out on the falling edge of SCLK.
The difference of Serial mode 0 and mode 3 is shown as "Serial Modes Supported".
5. For the following instructions: RDID, RDSR, RDSCUR, READ/READ4B, FAST_READ/FAST_READ4B,
2READ/2READ4B, DREAD/DREAD4B, 4READ/4READ4B, QREAD/QREAD4B, RDSFDP, RES, REMS, QPIID,
RDDPB, RDSPB, RDPASS, RDLR, RDEAR, RDFBR, RDSPBLK, RDCR, the shifted-in instruction sequence is
followed by a data-out sequence. After any bit of data being shifted out, the CS# can be high. For the following
instructions: WREN, WRDI, WRSR, SE/SE4B, BE32K/BE32K4B, BE/BE4B, CE, PP/PP4B, 4PP/4PP4B, DP,
ENSO, EXSO, WRSCUR, EN4B, EX4B, WPSEL, GBLK, GBULK, SPBLK, SUSPEND, RESUME, NOP, RSTEN,
RST, EQIO, RSTQIO the CS# must go high exactly at the byte boundary; otherwise, the instruction will be
rejected and not executed.
6. During the progress of Write Status Register, Program, Erase operation, to access the memory array is
neglected and not affect the current operation of Write Status Register, Program, Erase.
Figure 1. Serial Modes Supported
Note:
CPOL indicates clock polarity of Serial master, CPOL=1 for SCLK high while idle, CPOL=0 for SCLK low while not
transmitting. CPHA indicates clock phase. The combination of CPOL bit and CPHA bit decides which Serial mode is
supported.
SCLK
MSB
CPHA shift in shift out
SI
0
1
CPOL
0(Serial mode 0)
(Serial mode 3) 1
SO
SCLK
MSB
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Figure 2. Serial Input Timing
Figure 3. Output Timing
SCLK
SI
CS#
MSB
SO
tDVCH
High-Z
LSB
tSLCH
tCHDX
tCHCL
tCLCH
tSHCH
tSHSL
tCHSHtCHSL
LSB
ADDR.LSB IN
tSHQZ
tCH
tCL
tCLQX
tCLQV
tCLQX
tCLQV
SCLK
SO
CS#
SI
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8-1. 256Mb Address Protocol
The original 24 bit address protocol of serial Flash can only access density size below 128Mb. For the memory
device of 256Mb and above, the 32bit address is requested for access higher memory size. The MX25L25635F
provides three different methods to access the whole 256Mb density:
(1)Command entry 4-byte address mode: Issue Enter 4-Byte mode command to set up the 4BYTE bit in
Configuration Register bit. After 4BYTE bit has been set, the number of address cycle become 32-bit.
(2)Extended Address Register (EAR): configure the memory device into two 128Mb segments to select which one
is active through the EAR bit “0”.
(3)4-byte Address Command Set: When issuing 4-byte address command set, 4-byte address (A31-A0) is
requested after the instruction code. Please note that it is not necessary to issue EN4B command before issuing
any of 4-byte command set.
Enter 4-Byte Address Mode
In 4-byte Address mode, all instructions are 32-bits address clock cycles. By using EN4B and EX4B to enable and
disable the 4-byte address mode.
When 4-byte address mode is enabled, the EAR<0> becomes "don't care" for all instructions requiring 4-byte
address. The EAR function will be disabled when 4-byte mode is enabled.
When under EAR mode, Read, Program, Erase operates in the selected segment by using 3-byte address mode.
For the read operation, the whole array data can be continually read out with one command. Data output starts from
the selected top or bottom 128Mb, but it can cross the boundary. When the last byte of the segment is reached,
the next byte (in a continuous reading) is the first byte of the next segment. However, the EAR (Extended Address
Register) value does not change. The random access reading can only be operated in the selected segment.
The Chip erase command will erase the whole chip and is not limited by EAR selected segment.
Extended Address Register (Configurable)
The device provides an 8-bit volatile register for extended Address Register: it identifies the extended address (A31~A24)
above 128Mb density by using original 3-byte address.
Extended Address Register (EAR)
Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0
A31 A30 A29 A28 A27 A26 A25 A24
For the MX25L25635F the A31 to A25 are Don't Care. During EAR, reading these bits will read as 0. The bit 0 is
default as "0".
Figure 4. Top and Bottom 128M bits
Top 128Mb
Bottom 128Mb
01FFFFFF
00FFFFFF
00000000h
0100000h
EAR<0>= 1
EAR<0>= 0 (default)
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8-2. Quad Peripheral Interface (QPI) Read Mode
QPI protocol enables user to take full advantage of Quad I/O Serial Flash by providing the Quad I/O interface in
command cycles, address cycles and as well as data output cycles.
Enable QPI mode
By issuing 35H command, the QPI mode is enabled. After QPI mode is enabled, the device enters quad mode (4-4-4)
without QE bit status changed.
Figure 5. Enable QPI Sequence
MODE 3
SCLK
SIO0
CS#
MODE 0
234567
35h
SIO[3:1]
0 1
Reset QPI (RSTQIO)
To reset the QPI mode, the RSTQIO (F5H) command is required. After the RSTQIO command is issued, the device
returns from QPI mode (4 I/O interface in command cycles) to SPI mode (1 I/O interface in command cycles).
Note:
For EQIO and RSTQIO commands, CS# high width has to follow "write spec" tSHSL for next instruction.
Figure 6. Reset QPI Mode
SCLK
SIO[3:0]
CS#
F5h
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9. COMMAND DESCRIPTION
Table 5. Command Set
Read/Write Array Commands
Command
(byte)
READ
(normal read)
FAST READ
(fast read data)
2READ
(2 x I/O read
command)
DREAD
(1I 2O read)
4READ
(4 I/O read start
from bottom
128Mb)
4READ
(4 I/O read start
from Top 128Mb)
QREAD
(1I 4O read)
Mode SPI SPI SPI SPI SPI/QPI SPI/QPI SPI
Address Bytes 3/4 3/4 3/4 3/4 3/4 3/4 3/4
1st byte 03 (hex) 0B (hex) BB (hex) 3B (hex) EB (hex) EA (hex) 6B (hex)
2nd byte ADD1 ADD1 ADD1 ADD1 ADD1 ADD1 ADD1
3rd byte ADD2 ADD2 ADD2 ADD2 ADD2 ADD2 ADD2
4th byte ADD3 ADD3 ADD3 ADD3 ADD3 ADD3 ADD3
5th byte Dummy* Dummy* Dummy* Dummy* Dummy* Dummy*
Data Cycles
Action
n bytes read
out until CS#
goes high
n bytes read
out until CS#
goes high
n bytes read
out by 2 x I/O
until CS# goes
high
n bytes read
out by Dual
output until
CS# goes high
Quad I/O read
for bottom
128Mb with 6
dummy cycles
Quad I/O read
for Top 128Mb
with 6 dummy
cycles
n bytes read
out by Quad
output until
CS# goes high
Command
(byte)
PP
(page program)
4PP
(quad page
program)
SE
(sector erase)
BE 32K
(block erase
32KB)
BE
(block erase
64KB)
CE
(chip erase)
Mode SPI/QPI SPI SPI/QPI SPI/QPI SPI/QPI SPI/QPI
Address Bytes 3/4 3/4 3/4 3/4 3/4 0
1st byte 02 (hex) 38 (hex) 20 (hex) 52 (hex) D8 (hex) 60 or C7 (hex)
2nd byte ADD1 ADD1 ADD1 ADD1
3rd byte ADD2 ADD2 ADD2 ADD2
4th byte ADD3 ADD3 ADD3 ADD3
5th byte
Data Cycles 1-256 1-256
Action
to program the
selected page
quad input to
program the
selected page
to erase the
selected sector
to erase the
selected 32K
block
to erase the
selected block
to erase whole
chip
* Dummy cycle numbers will be different depending on the bit6 & bit 7 (DC0 & DC1) setting in configuration register.
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Read/Write Array Commands (4 Byte Address Command Set)
Command
(byte) PP4B 4PP4B
BE4B
(block erase
64KB)
BE32K4B
(block erase
32KB)
SE4B
(Sector erase
4KB)
Mode SPI/QPI SPI SPI/QPI SPI/QPI SPI/QPI
Address Bytes 44444
1st byte 12 (hex) 3E (hex) DC (hex) 5C (hex) 21 (hex)
2nd byte ADD1 ADD1 ADD1 ADD1 ADD1
3rd byte ADD2 ADD2 ADD2 ADD2 ADD2
4th byte ADD3 ADD3 ADD3 ADD3 ADD3
5th byte ADD4 ADD4 ADD4 ADD4 ADD4
6th byte
Data Cycles 1-256 1-256
Action
to program the
selected page
with 4byte
address
Quad input to
program the
selected page
with 4byte
address
to erase the
selected (64KB)
block with 4byte
address
to erase the
selected (32KB)
block with 4byte
address
to erase the
selected (4KB)
sector with 4byte
address
Command
(byte) READ4B FAST READ4B 2READ4B DREAD4B 4READ4B QREAD4B
Mode SPI SPI SPI SPI SPI/QPI SPI
Address Bytes 444444
1st byte 13 (hex) 0C (hex) BC (hex) 3C (hex) EC (hex) 6C (hex)
2nd byte ADD1 ADD1 ADD1 ADD1 ADD1 ADD1
3rd byte ADD2 ADD2 ADD2 ADD2 ADD2 ADD2
4th byte ADD3 ADD3 ADD3 ADD3 ADD3 ADD3
5th byte ADD4 ADD4 ADD4 ADD4 ADD4 ADD4
6th byte Dummy Dummy Dummy Dummy Dummy
Data Cycles
Action
read data byte by
4 byte address
read data byte by
4 byte address
read data byte by
2 x I/O with 4 byte
address
Read data byte by
Dual Output with
4 byte address
read data byte by
4 x I/O with 4 byte
address
Read data byte by
Quad Output with
4 byte address
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Register/Setting Commands
Command
(byte)
WREN
(write enable)
WRDI
(write disable)
RDSR
(read status
register)
RDCR
(read
configuration
register)
WRSR
(write status/
configuration
register)
RDEAR
(read extended
address
register)
WREAR
(write extended
address
register)
Mode SPI/QPI SPI/QPI SPI/QPI SPI/QPI SPI/QPI SPI/QPI SPI/QPI
1st byte 06 (hex) 04 (hex) 05 (hex) 15 (hex) 01 (hex) C8 (hex) C5 (hex)
2nd byte Values
3rd byte Values
4th byte
5th byte
Data Cycles 1-2 1
Action
sets the (WEL)
write enable
latch bit
resets the
(WEL) write
enable latch bit
to read out the
values of the
status register
to read out the
values of the
configuration
register
to write new
values of the
status/
configuration
register
read extended
address
register
write extended
address
register
Command
(byte)
WPSEL
(Write Protect
Selection)
EQIO
(Enable QPI)
RSTQIO
(Reset QPI)
EN4B
(enter 4-byte
mode)
EX4B
(exit 4-byte
mode)
PGM/ERS
Suspend
(Suspends
Program/
Erase)
PGM/ERS
Resume
(Resumes
Program/
Erase)
Mode SPI/QPI SPI QPI SPI/QPI SPI/QPI SPI/QPI SPI/QPI
1st byte 68 (hex) 35 (hex) F5 (hex) B7 (hex) E9 (hex) B0 (hex) 30 (hex)
2nd byte
3rd byte
4th byte
5th byte
Data Cycles
Action
to enter and
enable individal
block protect
mode
Entering the
QPI mode
Exiting the QPI
mode
to enter 4-byte
mode and set
4BYTE bit as
"1"
to exit 4-byte
mode and clear
4BYTE bit to
be "0"
Command
(byte)
DP (Deep
power down)
RDP (Release
from deep
power down)
SBL
(Set Burst
Length)
RDFBR
(read fast boot
register)
WRFBR
(write fast boot
register)
ESFBR
(erase fast
boot register)
Mode SPI/QPI SPI/QPI SPI/QPI SPI SPI SPI
1st byte B9 (hex) AB (hex) C0 (hex) 16(hex) 17(hex) 18(hex)
2nd byte
3rd byte
4th byte
5th byte
Data Cycles 1-4 4
Action
enters deep
power down
mode
release from
deep power
down mode
to set Burst
length
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ID/Security Commands
Command
(byte)
RDID
(read identific-
ation)
RES
(read electronic
ID)
REMS
(read electronic
manufacturer &
device ID)
QPIID
(QPI ID Read) RDSFDP
ENSO
(enter secured
OTP)
EXSO
(exit secured
OTP)
Mode SPI SPI/QPI SPI QPI SPI/QPI SPI/QPI SPI/QPI
Address Bytes 0000300
1st byte 9F (hex) AB (hex) 90 (hex) AF (hex) 5A (hex) B1 (hex) C1 (hex)
2nd byte x x ADD1
3rd byte x x ADD2
4th byte ADD1 (Note 1) ADD3
5th byte Dummy (8)
Action
outputs JEDEC
ID: 1-byte
Manufacturer
ID & 2-byte
Device ID
to read out
1-byte Device
ID
output the
Manufacturer
ID & Device ID
ID in QPI
interface
n bytes read
out until CS#
goes high
to enter the
4K-bit secured
OTP mode
to exit the
4K-bit secured
OTP mode
Command
(byte)
RDSCUR
(read security
register)
WRSCUR
(write
security
register)
GBLK
(gang block
lock)
GBULK
(gang block
unlock)
WRLR
(write Lock
register)
RDLR
(read Lock
register)
WRPASS
(write
password
register)
RDPASS
(read
password
register)
Mode SPI/QPI SPI/QPI SPI/QPI SPI/QPI SPI SPI SPI SPI
Address Bytes 00000000
1st byte 2B (hex) 2F (hex) 7E (hex) 98 (hex) 2C (hex) 2D (hex) 28 (hex) 27 (hex)
2nd byte
3rd byte
4th byte
5th byte
Data Cycles 2 2 1-8 1-8
Action
to read value
of security
register
to set the
lock-down bit
as "1" (once
lock-down,
cannot be
updated)
whole chip
write protect
whole chip
unprotect
Command
(byte)
PASSULK
(password
unlock)
WRSPB
(SPB bit
program)
ESSPB
(all SPB bit
erase)
RDSPB
(read SPB
status)
SPBLK
(SPB lock
set)
RDSPBLK
(SPB lock
register read)
WRDPB
(write DPB
register)
RDDPB
(read DPB
register)
Mode SPI SPI SPI SPI SPI SPI SPI SPI
Address Bytes 04040044
1st byte 29 (hex) E3 (hex) E4 (hex) E2 (hex) A6 (hex) A7 (hex) E1 (hex) E0 (hex)
2nd byte ADD1 ADD1 ADD1 ADD1
3rd byte ADD2 ADD2 ADD2 ADD2
4th byte ADD3 ADD3 ADD3 ADD3
5th byte ADD4 ADD4 ADD4 ADD4
Data Cycles 8 1 2 1 1
Action
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Note 1: The count base is 4-bit for ADD(2) and Dummy(2) because of 2 x I/O. And the MSB is on SO/SIO1 which is different
from 1 x I/O condition.
Note 2: ADD=00H will output the manufacturer ID first and AD=01H will output device ID first.
Note 3: It is not recommended to adopt any other code not in the command definition table, which will potentially enter the hid-
den mode.
Note 4: Before executing RST command, RSTEN command must be executed. If there is any other command to interfere, the
reset operation will be disabled.
Note 5: The number in parentheses after "ADD" or "Data" stands for how many clock cycles it has. For example, "Data(8)"
represents there are 8 clock cycles for the data in. Please note the number after "ADD" are based on 3-byte address
mode, for 4-byte address mode, which will be increased.
Reset Commands
Command
(byte)
NOP
(No Operation)
RSTEN
(Reset Enable)
RST
(Reset
Memory)
Mode SPI/QPI SPI/QPI SPI/QPI
1st byte 00 (hex) 66 (hex) 99 (hex)
2nd byte
3rd byte
4th byte
5th byte
Action
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9-1. Write Enable (WREN)
The Write Enable (WREN) instruction is for setting Write Enable Latch (WEL) bit. For those instructions like PP/
PP4B, 4PP/4PP4B, SE/SE4B, BE32K/BE32K4B, BE/BE4B, CE, and WRSR, which are intended to change the
device content WEL bit should be set every time after the WREN instruction setting the WEL bit.
The sequence of issuing WREN instruction is: CS# goes low→sending WREN instruction code→ CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care in
SPI mode.
Figure 7. Write Enable (WREN) Sequence (SPI Mode)
21 34567
High-Z
0
06h
Command
SCLK
SI
CS#
SO
Mode 3
Mode 0
Figure 8. Write Enable (WREN) Sequence (QPI Mode)
SCLK
SIO[3:0]
CS#
06h
0 1
Command
Mode 3
Mode 0
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9-2. Write Disable (WRDI)
The Write Disable (WRDI) instruction is to reset Write Enable Latch (WEL) bit.
The sequence of issuing WRDI instruction is: CS# goes low→sending WRDI instruction code→CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care in
SPI mode.
The WEL bit is reset by following situations:
- Power-up
- Reset# pin driven low
- WRDI command completion
- WRSR command completion
- PP/PP4B command completion
- 4PP/4PP4B command completion
- SE/SE4B command completion
- BE32K/BE32K4B command completion
- BE/BE4B command completion
- CE command completion
- PGM/ERS Suspend command completion
- Softreset command completion
- WRSCUR command completion
- WPSEL command completion
- GBLK command completion
- GBULK command completion
- WREAR command completion
- WRLR command completion
- WRPASS command completion
- SPBLK command completion
- WRSPB command completion
- ESSPB command completion
- WRDPB command completion
- WRFBR command completion
- ESFBR command completion
Figure 9. Write Disable (WRDI) Sequence (SPI Mode)
21 34567
High-Z
0Mode 3
Mode 0
04h
Command
SCLK
SI
CS#
SO
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9-3. Read Identification (RDID)
The RDID instruction is for reading the manufacturer ID of 1-byte and followed by Device ID of 2-byte. The Macronix
Manufacturer ID and Device ID are listed as Table 6 ID Definitions.
The sequence of issuing RDID instruction is: CS# goes low→ sending RDID instruction code→24-bits ID data out
on SO→ to end RDID operation can drive CS# to high at any time during data out.
While Program/Erase operation is in progress, it will not decode the RDID instruction, therefore there's no effect on
the cycle of program/erase operation which is currently in progress. When CS# goes high, the device is at standby
stage.
Figure 11. Read Identification (RDID) Sequence (SPI mode only)
21 3456789
Command
0
Manufacturer Identification
High-Z
MSB
15 14 13 3210
Device Identification
MSB
7 6 5 2 1 0
16 17 18 28 29 30 31
SCLK
SI
CS#
SO
9Fh
Mode 3
Mode 0
14 15
10 13
Figure 10. Write Disable (WRDI) Sequence (QPI Mode)
SCLK
SIO[3:0]
CS#
04h
0 1
Command
Mode 3
Mode 0
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9-4. Release from Deep Power-down (RDP), Read Electronic Signature (RES)
The Release from Deep Power-down (RDP) instruction is completed by driving Chip Select (CS#) High. When Chip
Select (CS#) is driven High, the device is put in the Stand-by Power mode. If the device was not previously in the
Deep Power-down mode, the transition to the Stand-by Power mode is immediate. If the device was previously in
the Deep Power-down mode, though, the transition to the Stand-by Power mode is delayed by tRES2, and Chip
Select (CS#) must remain High for at least tRES2(max), as specified in Table 19 AC Characteristics. Once in the
Stand-by Power mode, the device waits to be selected, so that it can receive, decode and execute instructions. The
RDP instruction is only for releasing from Deep Power Down Mode. Reset# pin goes low will release the Flash from
deep power down mode.
RES instruction is for reading out the old style of 8-bit Electronic Signature, whose values are shown as Table 6 ID
Definitions. This is not the same as RDID instruction. It is not recommended to use for new design. For new design,
please use RDID instruction.
Even in Deep power-down mode, the RDP and RES are also allowed to be executed, only except the device is in
progress of program/erase/write cycle; there's no effect on the current program/erase/write cycle in progress.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
The RES instruction is ended by CS# goes high after the ID been read out at least once. The ID outputs repeatedly
if continuously send the additional clock cycles on SCLK while CS# is at low. If the device was not previously in
Deep Power-down mode, the device transition to standby mode is immediate. If the device was previously in Deep
Power-down mode, there's a delay of tRES2 to transit to standby mode, and CS# must remain to high at least
tRES2(max). Once in the standby mode, the device waits to be selected, so it can be receive, decode, and execute
instruction.
Figure 12. Read Electronic Signature (RES) Sequence (SPI Mode)
23
21 3456789 10 28 29 30 31 32 33 34 35
22 21 3210
36 37 38
765432 0
1
High-Z Electronic Signature Out
3 Dummy Bytes
0
MSB
Stand-by Mode
Deep Power-down Mode
MSB
tRES2
SCLK
CS#
SI
SO
ABh
Command
Mode 3
Mode 0
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SCLK
SIO[3:0]
CS#
MODE 0
MODE 3
MSB LSB
Data Out
Data In
H0XXXXXX L0
Deep Power-down Mode
Stand-by Mode
0
ABh
1 2 3 4 6 75
3 Dummy Bytes
Command
Figure 13. Read Electronic Signature (RES) Sequence (QPI Mode)
Figure 14. Release from Deep Power-down (RDP) Sequence (SPI Mode)
21 345670tRES1
Stand-by Mode
Deep Power-down Mode
High-Z
SCLK
CS#
SI
SO
ABh
Command
Mode 3
Mode 0
Figure 15. Release from Deep Power-down (RDP) Sequence (QPI Mode)
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9-5. Read Electronic Manufacturer ID & Device ID (REMS)
The REMS instruction is an alternative to the Release from Power-down/Device ID instruction that provides both the
JEDEC assigned manufacturer ID and the specific device ID.
The REMS instruction is very similar to the Release from Power-down/Device ID instruction. The instruction is
initiated by driving the CS# pin low and shift the instruction code "90h" followed by two dummy bytes and one
bytes address (A7~A0). After which, the Manufacturer ID for Macronix (C2h) and the Device ID are shifted out
on the falling edge of SCLK with most significant bit (MSB) first. The Device ID values are listed in Table 6 of ID
Definitions. If the one-byte address is initially set to 01h, then the device ID will be read first and then followed by the
Manufacturer ID. The Manufacturer and Device IDs can be read continuously, alternating from one to the other. The
instruction is completed by driving CS# high.
Notes:
(1) ADD=00H will output the manufacturer's ID first and ADD=01H will output device ID first.
Figure 16. Read Electronic Manufacturer & Device ID (REMS) Sequence (SPI Mode only)
15 14 13 3 2 1 0
21 3456789 10
2 Dummy Bytes
0
32 33 34 36 37 38 39 40 41 42 43 44 45 46
765432 0
1
Manufacturer ID
ADD (1)
MSB
76543210
Device ID
MSB MSB
7
47
765432 0
1
3531302928
SCLK
SI
CS#
SO
SCLK
SI
CS#
SO
90h
High-Z
Command
Mode 3
Mode 0
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9-6. QPI ID Read (QPIID)
User can execute this QPIID Read instruction to identify the Device ID and Manufacturer ID. The sequence of issue
QPIID instruction is CS# goes low→sending QPI ID instruction→Data out on SO→CS# goes high. Most significant
bit (MSB) first.
After the command cycle, the device will immediately output data on the falling edge of SCLK. The manufacturer ID,
memory type, and device ID data byte will be output continuously, until the CS# goes high.
Table 6. ID Definitions
Command Type MX25L25635F
RDID 9Fh Manufactory ID Memory type Memory density
C2 20 19
RES ABh Electronic ID
18
REMS 90h Manufactory ID Device ID
C2 18
QPIID AFh Manufactory ID Memory type Memory density
C2 20 19
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9-7. Read Status Register (RDSR)
The RDSR instruction is for reading Status Register Bits. The Read Status Register can be read at any time (even
in program/erase/write status register condition). It is recommended to check the Write in Progress (WIP) bit before
sending a new instruction when a program, erase, or write status register operation is in progress.
The sequence of issuing RDSR instruction is: CS# goes low→ sending RDSR instruction code→ Status Register data
out on SO.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
Figure 17. Read Status Register (RDSR) Sequence (SPI Mode)
21 3456789 10 11 12 13 14 15
command
0
76543210
Status Register Out
High-Z
MSB
76543210
Status Register Out
MSB
7
SCLK
SI
CS#
SO
05h
Mode 3
Mode 0
Figure 18. Read Status Register (RDSR) Sequence (QPI Mode)
0 1 3
SCLK
SIO[3:0]
CS#
05h
2
H0 L0
MSB LSB
4 5 7
H0 L0
6
H0 L0 H0 L0
Status ByteStatus ByteStatus ByteStatus Byte
Mode 3
Mode 0
N
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9-8. Read Configuration Register (RDCR)
The RDCR instruction is for reading Configuration Register Bits. The Read Configuration Register can be read at
any time (even in program/erase/write configuration register condition). It is recommended to check the Write in
Progress (WIP) bit before sending a new instruction when a program, erase, or write configuration register operation
is in progress.
The sequence of issuing RDCR instruction is: CS# goes low→ sending RDCR instruction code→ Configuration
Register data out on SO.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
Figure 19. Read Configuration Register (RDCR) Sequence (SPI Mode)
21 3456789 10 11 12 13 14 15
command
0
76543210
Configuration register Out
High-Z
MSB
76543210
Configuration register Out
MSB
7
SCLK
SI
CS#
SO
15h
Mode 3
Mode 0
Figure 20. Read Configuration Register (RDCR) Sequence (QPI Mode)
0 1 3
SCLK
SIO[3:0]
CS#
15h
2
H0 L0
MSB LSB
4 5 7
H0 L0
6
H0 L0 H0 L0
Mode 3
Mode 0
Config. ByteConfig. ByteConfig. ByteConfig. Byte
N
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WREN command
Program/erase command
Write program data/address
(Write erase address)
RDSR command
Read array data
(same address of PGM/ERS)
Program/erase successfully
Yes
Yes
Program/erase fail
No
start
Verify OK?
WIP=0?
Program/erase
another block?
Program/erase completed
No
Yes
No
RDSR command*
Yes
WEL=1? No
* Issue RDSR to check BP[3:0].
* If WPSEL = 1, issue RDSPB and RDDPB to check the block status.
RDSR command
Read WEL=0, BP[3:0], QE,
and SRWD data
Figure 21. Program/Erase flow with read array data
For user to check if Program/Erase operation is finished or not, RDSR instruction flow are shown as follows:
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Figure 22. Program/Erase flow without read array data (read P_FAIL/E_FAIL flag)
WREN command
Program/erase command
Write program data/address
(Write erase address)
RDSR command
RDSCUR command
Program/erase successfully
Yes
No
Program/erase fail
Yes
start
P_FAIL/E_FAIL =1 ?
WIP=0?
Program/erase
another block?
Program/erase completed
No
Yes
No
RDSR command*
Yes
WEL=1? No
* Issue RDSR to check BP[3:0].
* If WPSEL = 1, issue RDSPB and RDDPB to check the block status.
RDSR command
Read WEL=0, BP[3:0], QE,
and SRWD data
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Status Register
Note 1: see the Table 2 "Protected Area Size".
bit7 bit6 bit5 bit4 bit3 bit2 bit1 bit0
SRWD (status
register write
protect)
QE
(Quad
Enable)
BP3
(level of
protected
block)
BP2
(level of
protected
block)
BP1
(level of
protected
block)
BP0
(level of
protected
block)
WEL
(write enable
latch)
WIP
(write in
progress bit)
1=status
register write
disable
1=Quad
Enable
0=not Quad
Enable
(note 1) (note 1) (note 1) (note 1)
1=write
enable
0=not write
enable
1=write
operation
0=not in write
operation
Non-volatile
bit
Non-volatile
bit
Non-volatile
bit
Non-volatile
bit
Non-volatile
bit
Non-volatile
bit volatile bit volatile bit
Status Register
The definition of the status register bits is as below:
WIP bit. The Write in Progress (WIP) bit, a volatile bit, indicates whether the device is busy in program/erase/write
status register progress. When WIP bit sets to 1, which means the device is busy in program/erase/write status
register progress. When WIP bit sets to 0, which means the device is not in progress of program/erase/write status
register cycle.
WEL bit. The Write Enable Latch (WEL) bit, a volatile bit, indicates whether the device is set to internal write enable
latch. When WEL bit sets to 1, which means the internal write enable latch is set, the device can accept program/
erase/write status register instruction. When WEL bit sets to 0, which means no internal write enable latch; the
device will not accept program/erase/write status register instruction. The program/erase command will be ignored
if it is applied to a protected memory area. To ensure both WIP bit & WEL bit are both set to 0 and available for next
program/erase/operations, WIP bit needs to be confirm to be 0 before polling WEL bit. After WIP bit confirmed, WEL
bit needs to be confirm to be 0.
BP3, BP2, BP1, BP0 bits. The Block Protect (BP3, BP2, BP1, BP0) bits, non-volatile bits, indicate the protected area
(as defined in Table 2) of the device to against the program/erase instruction without hardware protection mode being
set. To write the Block Protect (BP3, BP2, BP1, BP0) bits requires the Write Status Register (WRSR) instruction to
be executed. Those bits define the protected area of the memory to against Page Program (PP), Sector Erase (SE),
Block Erase 32KB (BE32K), Block Erase (BE) and Chip Erase (CE) instructions (only if Block Protect bits (BP3:BP0)
set to 0, the CE instruction can be executed). The BP3, BP2, BP1, BP0 bits are "0" as default. Which is un-protected.
QE bit. The Quad Enable (QE) bit, non-volatile bit, while it is "0" (factory default), it performs non-Quad and WP#,
RESET# are enable. While QE is "1", it performs Quad I/O mode and WP#, RESET# are disabled. In the other
word, if the system goes into four I/O mode (QE=1), the feature of HPM and RESET will be disabled.
SRWD bit. The Status Register Write Disable (SRWD) bit, non-volatile bit, is operated together with Write Protection
(WP#/SIO2) pin for providing hardware protection mode. The hardware protection mode requires SRWD sets to 1 and
WP#/SIO2 pin signal is low stage. In the hardware protection mode, the Write Status Register (WRSR) instruction is
no longer accepted for execution and the SRWD bit and Block Protect bits (BP3, BP2, BP1, BP0) are read only. The
SRWD bit defaults to be "0".
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Configuration Register
The Configuration Register is able to change the default status of Flash memory. Flash memory will be configured
after the CR bit is set.
ODS bit
The output driver strength (ODS2, ODS1, ODS0) bits are volatile bits, which indicate the output driver level (as
defined in Output Driver Strength Table) of the device. The Output Driver Strength is defaulted as 30 Ohms when
delivered from factory. To write the ODS bits requires the Write Status Register (WRSR) instruction to be executed.
TB bit
The Top/Bottom (TB) bit is a non-volatile OTP bit. The Top/Bottom (TB) bit is used to configure the Block Protect
area by BP bit (BP3, BP2, BP1, BP0), starting from TOP or Bottom of the memory array. The TB bit is defaulted as
“0”, which means Top area protect. When it is set as “1”, the protect area will change to Bottom area of the memory
device. To write the TB bits requires the Write Status Register (WRSR) instruction to be executed.
4BYTE Indicator bit
By writing EN4B instruction, the 4BYTE bit may be set as "1" to access the address length of 32-bit for memory area
of higher density (large than 128Mb). The default state is "0" as the 24-bit address mode. The 4BYTE bit may be
cleared by power-off or writing EX4B instruction to reset the state to be "0".
Table 7. Configuration Register
bit7 bit6 bit5 bit4 bit3 bit2 bit1 bit0
DC1
(Dummy
cycle 1)
DC0
(Dummy
cycle 0)
4 BYTE Reserved
TB
(top/bottom
selected)
ODS 2
(output driver
strength)
ODS 1
(output driver
strength)
ODS 0
(output driver
strength)
(note 2) (note 2)
0=3-byte
address
mode
1=4-byte
address
mode
(Default=0)
x
0=Top area
protect
1=Bottom
area protect
(Default=0)
(note 1) (note 1) (note 1)
volatile bit volatile bit volatile bit x OTP volatile bit volatile bit volatile bit
Note 1: see "Output Driver Strength Table"
Note 2: see "Dummy Cycle and Frequency Table (MHz)"
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Dummy Cycle and Frequency Table (MHz)
DC[1:0] Numbers of Dummy
clock cycles Fast Read Dual Output Fast
Read
Quad Output Fast
Read
00 (default) 8 104 104 104
01 6 104 104 84
10 8 104 104 104
11 10 133 133 133
Output Driver Strength Table
ODS2 ODS1 ODS0 Description Note
0 0 0 Reserved
Impedance at VCC/2
0 0 1 90 Ohms
0 1 0 60 Ohms
0 1 1 45 Ohms
1 0 0 Reserved
1 0 1 20 Ohms
1 1 0 15 Ohms
1 1 1 30 Ohms (Default)
DC[1:0] Numbers of Dummy
clock cycles Dual IO Fast Read
00 (default) 4 84
01 6 104
10 8 104
11 10 133
DC[1:0] Numbers of Dummy
clock cycles Quad IO Fast Read
00 (default) 6 84
01 4 70
10 8 104
11 10 133
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Note : The CS# must go high exactly at 8 bits or 16 bits data boundary to completed the write register command.
Figure 23. Write Status Register (WRSR) Sequence (SPI Mode)
21 3456789 10 11 12 13 14 15
Status
Register In
Configuration
Register In
0
MSB
SCLK
SI
CS#
SO
01h
High-Z
command
Mode 3
Mode 0
16 17 18 19 20 21 22 23
765 4321 0 15 14 13 12 11 10 9 8
Figure 24. Write Status Register (WRSR) Sequence (QPI Mode)
SCLK
SIO[3:0]
CS#
2 3 510 4
H0 L0 H1 L1
Command SR in CR in
Mode 3 Mode 3
Mode 0 Mode 0
01h
9-9. Write Status Register (WRSR)
The WRSR instruction is for changing the values of Status Register Bits and Configuration Register Bits. Before
sending WRSR instruction, the Write Enable (WREN) instruction must be decoded and executed to set the Write
Enable Latch (WEL) bit in advance. The WRSR instruction can change the value of Block Protect (BP3, BP2, BP1,
BP0) bits to define the protected area of memory (as shown in Table 2). The WRSR also can set or reset the Quad
enable (QE) bit and set or reset the Status Register Write Disable (SRWD) bit in accordance with Write Protection (WP#/
SIO2) pin signal, but has no effect on bit1(WEL) and bit0 (WIP) of the status register. The WRSR instruction cannot
be executed once the Hardware Protected Mode (HPM) is entered.
The sequence of issuing WRSR instruction is: CS# goes low→ sending WRSR instruction code→ Status Register
data on SI→CS# goes high.
The CS# must go high exactly at the 8 bits or 16 bits data boundary; otherwise, the instruction will be rejected and
not executed. The self-timed Write Status Register cycle time (tW) is initiated as soon as Chip Select (CS#) goes
high. The Write in Progress (WIP) bit still can be check out during the Write Status Register cycle is in progress.
The WIP sets 1 during the tW timing, and sets 0 when Write Status Register Cycle is completed, and the Write
Enable Latch (WEL) bit is reset.
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Table 8. Protection Modes
Note:
1. As defined by the values in the Block Protect (BP3, BP2, BP1, BP0) bits of the Status Register, as shown in
Table 2.
Mode Status register condition WP# and SRWD bit status Memory
Software protection
mode (SPM)
Status register can be written
in (WEL bit is set to "1") and
the SRWD, BP0-BP3
bits can be changed
WP#=1 and SRWD bit=0, or
WP#=0 and SRWD bit=0, or
WP#=1 and SRWD=1
The protected area
cannot
be program or erase.
Hardware protection
mode (HPM)
The SRWD, BP0-BP3 of
status register bits cannot be
changed
WP#=0, SRWD bit=1
The protected area
cannot
be program or erase.
Software Protected Mode (SPM):
- When SRWD bit=0, no matter WP#/SIO2 is low or high, the WREN instruction may set the WEL bit and can
change the values of SRWD, BP3, BP2, BP1, BP0. The protected area, which is defined by BP3, BP2, BP1,
BP0 and T/B bit, is at software protected mode (SPM).
- When SRWD bit=1 and WP#/SIO2 is high, the WREN instruction may set the WEL bit can change the values
of SRWD, BP3, BP2, BP1, BP0. The protected area, which is defined by BP3, BP2, BP1, BP0 and T/B bit, is at
software protected mode (SPM)
Note:
If SRWD bit=1 but WP#/SIO2 is low, it is impossible to write the Status Register even if the WEL bit has previously
been set. It is rejected to write the Status Register and not be executed.
Hardware Protected Mode (HPM):
- When SRWD bit=1, and then WP#/SIO2 is low (or WP#/SIO2 is low before SRWD bit=1), it enters the hardware
protected mode (HPM). The data of the protected area is protected by software protected mode by BP3, BP2,
BP1, BP0 and T/B bit and hardware protected mode by the WP#/SIO2 to against data modification.
Note:
To exit the hardware protected mode requires WP#/SIO2 driving high once the hardware protected mode is entered.
If the WP#/SIO2 pin is permanently connected to high, the hardware protected mode can never be entered; only
can use software protected mode via BP3, BP2, BP1, BP0 and T/B bit.
If the system enter QPI or set QE=1, the feature of HPM will be disabled.
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Figure 25. WRSR flow
WREN command
WRSR command
Write status register data
RDSR command
WRSR successfully
Yes
Yes
WRSR fail
No
start
Verify OK?
WIP=0? No
RDSR command
Yes
WEL=1? No
RDSR command
Read WEL=0, BP[3:0], QE,
and SRWD data
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Figure 26. WP# Setup Timing and Hold Timing during WRSR when SRWD=1
High-Z
01h
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
tWHSL tSHWL
SCLK
SI
CS#
WP#
SO
Note: WP# must be kept high until the embedded operation finish.
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9-10. Enter 4-byte mode (EN4B)
The EN4B instruction enables accessing the address length of 32-bit for the memory area of higher density (larger
than 128Mb). The device default is in 24-bit address mode; after sending out the EN4B instruction, the bit5 (4BYTE
bit) of security register will be automatically set to "1" to indicate the 4-byte address mode has been enabled. Once
the 4-byte address mode is enabled, the address length becomes 32-bit instead of the default 24-bit. There are
three methods to exit the 4-byte mode: writing exit 4-byte mode (EX4B) instruction, Reset or power-off.
All instructions are accepted normally, and just the address bit is changed from 24-bit to 32-bit.
The following command don't support 4bye address: 4READ fro top 128Mb (EAh), RDSFDP, RES and REMS.
The sequence of issuing EN4B instruction is: CS# goes low sending EN4B instruction to enter 4-byte mode(
automatically set 4BYTE bit as "1") → CS# goes high.
9-11. Exit 4-byte mode (EX4B)
The EX4B instruction is executed to exit the 4-byte address mode and return to the default 3-bytes address mode.
After sending out the EX4B instruction, the bit5 (4BYTE bit) of Configuration register will be cleared to be "0" to
indicate the exit of the 4-byte address mode. Once exiting the 4-byte address mode, the address length will return to
24-bit.
The sequence of issuing EX4B instruction is: CS# goes low sending EX4B instruction to exit 4-byte mode
(automatically clear the 4BYTE bit to be "0") → CS# goes high.
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9-12. Read Data Bytes (READ)
The read instruction is for reading data out. The address is latched on rising edge of SCLK, and data shifts out on
the falling edge of SCLK at a maximum frequency fR. The first address byte can be at any location. The address
is automatically increased to the next higher address after each byte data is shifted out, so the whole memory can
be read out at a single READ instruction. The address counter rolls over to 0 when the highest address has been
reached.
The default read mode is 3-byte address, to access higher address (4-byte address) which requires to enter the
4-byte address read mode or to define EAR bit. To enter the 4-byte mode, please refer to the enter 4-byte mode (EN4B)
Mode section.
The sequence of issuing READ instruction is: CS# goes low→sending READ instruction code→ 3-byte or 4-byte
address on SI→ data out on SO→to end READ operation can use CS# to high at any time during data out.
Figure 27. Read Data Bytes (READ) Sequence (SPI Mode only)
SCLK
SI
CS#
SO
23
21 3456789 10 28 29 30 31 32 33 34 35
22 21 3210
36 37 38
76543 1 7
0
Data Out 1
0
MSB
MSB
2
39
Data Out 2
03h
High-Z
command
Mode 3
Mode 0
24-Bit Address
(Note)
Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the
address cycles will be increased.
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9-13. Read Data Bytes at Higher Speed (FAST_READ)
The FAST_READ instruction is for quickly reading data out. The address is latched on rising edge of SCLK, and
data of each bit shifts out on the falling edge of SCLK at a maximum frequency fC. The first address byte can be at
any location. The address is automatically increased to the next higher address after each byte data is shifted out,
so the whole memory can be read out at a single FAST_READ instruction. The address counter rolls over to 0 when
the highest address has been reached.
The default read mode is 3-byte address, to access higher address (4-byte address) which requires to enter the
4-byte address read mode or to define EAR bit. To enter the 4-byte mode, please refer to the enter 4-byte mode (EN4B)
Mode section.
Read on SPI Mode The sequence of issuing FAST_READ instruction is: CS# goes low→ sending FAST_READ
instruction code→ 3-byte or 4-byte address on SI→ 8 dummy cycles (default)→ data out on SO→ to end FAST_
READ operation can use CS# to high at any time during data out.
While Program/Erase/Write Status Register cycle is in progress, FAST_READ instruction is rejected without any
impact on the Program/Erase/Write Status Register current cycle.
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Figure 28. Read at Higher Speed (FAST_READ) Sequence (SPI Mode)
23
21 3456789 10 28 29 30 31
22 21 3210
High-Z
0
32 33 34 36 37 38 39 40 41 42 43 44 45 46
765432 0
1
DATA OUT 1
Configurable
Dummy Cycle
MSB
76543210
DATA OUT 2
MSB MSB
7
47
765432 0
1
35
SCLK
SI
CS#
SO
SCLK
SI
CS#
SO
0Bh
Command
Mode 3
Mode 0
24-Bit Address
(Note)
Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the
address cycles will be increased.
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9-14. Dual Output Read Mode (DREAD)
The DREAD instruction enable double throughput of Serial Flash in read mode. The address is latched on rising
edge of SCLK, and data of every two bits (interleave on 2 I/O pins) shift out on the falling edge of SCLK at a
maximum frequency fT. The first address byte can be at any location. The address is automatically increased to the
next higher address after each byte data is shifted out, so the whole memory can be read out at a single DREAD
instruction. The address counter rolls over to 0 when the highest address has been reached. Once writing DREAD
instruction, the following data out will perform as 2-bit instead of previous 1-bit.
The default read mode is 3-byte address, to access higher address (4-byte address) which requires to enter the
4-byte address read mode or to define EAR bit. To enter the 4-byte mode, please refer to the enter 4-byte mode (EN4B)
Mode section.
The sequence of issuing DREAD instruction is: CS# goes low sending DREAD instruction3-byte or 4-byte
address on SIO0 8 dummy cycles (default) on SIO0 data out interleave on SIO1 & SIO0 to end DREAD
operation can use CS# to high at any time during data out.
While Program/Erase/Write Status Register cycle is in progress, DREAD instruction is rejected without any impact
on the Program/Erase/Write Status Register current cycle.
Figure 29. Dual Read Mode Sequence
High Impedance
21 3456780
SCLK
SI/SIO0
SO/SIO1
CS#
930 31 32 39 40 41 43 44 4542
3B D4
D5
D2
D3
D7
D6 D6 D4
D0
D7 D5
D1
Command 24 ADD Cycle Configurable
Dummy Cycle
A23 A22 A1 A0
… …
Data Out
1
Data Out
2
Notes:
1. Please note the above address cycles are base on 3-byte address mode, for 4-byte address mode, the address
cycles will be increased.
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9-15. 2 x I/O Read Mode (2READ)
The 2READ instruction enable double throughput of Serial Flash in read mode. The address is latched on rising
edge of SCLK, and data of every two bits (interleave on 2 I/O pins) shift out on the falling edge of SCLK at a
maximum frequency fT. The first address byte can be at any location. The address is automatically increased to the
next higher address after each byte data is shifted out, so the whole memory can be read out at a single 2READ
instruction. The address counter rolls over to 0 when the highest address has been reached. Once writing 2READ
instruction, the following address/dummy/data out will perform as 2-bit instead of previous 1-bit.
The default read mode is 3-byte address, to access higher address (4-byte address) which requires to enter the
4-byte address read mode or to define EAR bit. To enter the 4-byte mode, please refer to the enter 4-byte mode (EN4B)
Mode section.
The sequence of issuing 2READ instruction is: CS# goes low sending 2READ instruction 3-byte or 4-byte
address interleave on SIO1 & SIO0 4 dummy cycles (default) on SIO1 & SIO0 data out interleave on SIO1 &
SIO0 to end 2READ operation can use CS# to high at any time during data out.
While Program/Erase/Write Status Register cycle is in progress, 2READ instruction is rejected without any impact
on the Program/Erase/Write Status Register current cycle.
Figure 30. 2 x I/O Read Mode Sequence (SPI Mode only)
21 3456780
SCLK
SI/SIO0
SO/SIO1
CS#
9 10 17 18 19 20
BBh
21 22 23 24 25 26 27 28 29 30
Command Configurable
Dummy Cycle
Mode 3
Mode 0
Mode 3
Mode 0
12 ADD Cycles
(Note)
A23 A21 A19 A5 A3 A1
A4 A2 AA22 A20 A18
D6 D4
D7 D5
Data
Out 1
Data
Out 2
D2 D0
D3 D1
D0
D1
D6 D4
D7 D5
D2
D3
Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the
address cycles will be increased.
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9-16. Quad Read Mode (QREAD)
The QREAD instruction enable quad throughput of Serial Flash in read mode. The address is latched on rising
edge of SCLK, and data of every four bits (interleave on 4 I/O pins) shift out on the falling edge of SCLK at a
maximum frequency fQ. The first address byte can be at any location. The address is automatically increased to the
next higher address after each byte data is shifted out, so the whole memory can be read out at a single QREAD
instruction. The address counter rolls over to 0 when the highest address has been reached. Once writing QREAD
instruction, the following data out will perform as 4-bit instead of previous 1-bit.
The default read mode is 3-byte address, to access higher address (4-byte address) which requires to enter the
4-byte address read mode or to define EAR bit. To enter the 4-byte mode, please refer to the enter 4-byte mode (EN4B)
Mode section.
The sequence of issuing QREAD instruction is: CS# goes low sending QREAD instruction 3-byte or 4-byte
address on SI 8 dummy cycle (Default) data out interleave on SO3, SO2, SO1 & SO0 to end QREAD
operation can use CS# to high at any time during data out.
While Program/Erase/Write Status Register cycle is in progress, QREAD instruction is rejected without any impact
on the Program/Erase/Write Status Register current cycle.
High Impedance
21 3456780
SCLK
SIO0
SIO1
CS#
29
930 31 32 33 38 39 40 41 42
6B
High Impedance
SIO2
High Impedance
SIO3
Configurable
dummy cycles
D4 D0
D5 D1
D6 D2
D7 D3
D4 D0
D5 D1
D6 D2
D7 D3
D4
D5
D6
D7
A23 A22 A2 A1 A0
Command 24 ADD Cycles Data
Out 1
Data
Out 2
Data
Out 3
Figure 31. Quad Read Mode Sequence
Notes:
1. Please note the above address cycles are base on 3-byte address mode, for 4-byte address mode, the address
cycles will be increased.
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9-17. 4 x I/O Read Mode (4READ)
The 4READ instruction enable quad throughput of Serial Flash in read mode. A Quad Enable (QE) bit of status
Register must be set to "1" before sending the 4READ instruction. The address is latched on rising edge of SCLK,
and data of every four bits (interleave on 4 I/O pins) shift out on the falling edge of SCLK at a maximum frequency
fQ. The first address byte can be at any location. The address is automatically increased to the next higher address
after each byte data is shifted out, so the whole memory can be read out at a single 4READ instruction. The address
counter rolls over to 0 when the highest address has been reached. Once writing 4READ instruction, the following
address/dummy/data out will perform as 4-bit instead of previous 1-bit.
The default read mode is 3-byte address, to access higher address (4-byte address) which requires to enter the
4-byte address read mode or to define EAR bit. To enter the 4-byte mode, please refer to the enter 4-byte mode (EN4B)
Mode section.
4 x I/O Read on SPI Mode (4READ) The sequence of issuing 4READ instruction is: CS# goes low sending
4READ instruction 3-byte or 4-byte address interleave on SIO3, SIO2, SIO1 & SIO0 6 dummy cycles (Default)
data out interleave on SIO3, SIO2, SIO1 & SIO0 to end 4READ operation can use CS# to high at any time
during data out.
4 x I/O Read on QPI Mode (4READ) The 4READ instruction also support on QPI command mode. The sequence
of issuing 4READ instruction QPI mode is: CS# goes low sending 4READ instruction 3-byte or 4-byte address
interleave on SIO3, SIO2, SIO1 & SIO0 6 dummy cycles (Default) data out interleave on SIO3, SIO2, SIO1 &
SIO0 to end 4READ operation can use CS# to high at any time during data out.
While Program/Erase/Write Status Register cycle is in progress, 4READ instruction is rejected without any impact
on the Program/Erase/Write Status Register current cycle.
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Figure 32. 4 x I/O Read Mode Sequence (SPI Mode)
21 3456780
SCLK
SIO0
SIO1
SIO2
SIO3
CS#
9 1210 11 13 14
EA/EBh
P4 P0
P5 P1
P6 P2
P7 P3
15 16 17 18 19 20 21 22
23 24
Command
Configurable
Dummy Cycle (Note 3)
Performance
enhance
indicator (Note 1)
Mode 3
Mode 0
6 ADD Cycles
A21 A17 A13 A9 A5 A1
A8 A4 AA20 A16 A12
A23 A19 A15 A11 A7 A3
A10 A6 A2A22 A18 A14
D4 D0
D5 D1
Data
Out 1
Data
Out 2
Data
Out 3
D4 D0
D5 D1
D4 D0
D5 D1
D6 D2
D7 D3
D6 D2
D7 D3
D6 D2
D7 D3
Mode 3
Mode 0
Notes:
1. Hi-impedance is inhibited for the two clock cycles.
2. P7≠P3, P6≠P2, P5≠P1 & P4≠P0 (Toggling) is inhibited.
3. Configuration Dummy cycle numbers will be different depending on the bit6 & bit 7 (DC0 & DC1) setting in
configuration register.
4. Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the
address cycles will be increased.
Figure 33. 4 x I/O Read Mode Sequence (QPI Mode)
3 EDOM
SCLK
SIO[3:0]
CS#
MODE 3
A5 A4 A3 A2 A1 A0 X X
MODE 0MODE 0
MSB
Data Out
EA/EB H0 L0 H1 L1 H2 L2 H3 L3
X X X X
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
Data In 24-bit Address
(Note)
Configurable
Dummy Cycle
Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the
address cycles will be increased.
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9-18. 4 Byte Address Command Set
The operation of 4-byte address command set was very similar to original 3-byte address command set. The
only different is all the 4-byte command set request 4-byte address (A31-A0) followed by instruction code. The
command set support 4-byte address including: READ4B, Fast_Read4B, DREAD4B, 2READ4B, QREAD4B,
4READ4B, PP4B, 4PP4B, SE4B, BE32K4B, BE4B. Please note that it is not necessary to issue EN4B command
before issuing any of 4-byte command set.
Figure 34. Read Data Bytes using 4 Byte Address Sequence (READ4B)
SCLK
SI
CS#
SO
31
21 3456789 10 36 37 38 39 40 41 42 43
30 29 3210
44 45 46
76543 1 7
0
High Impedance Data Out 1
Command 32-bit address
0
MSB
2
47
Data Out 2
13h
MSB
Figure 35. Read Data Bytes at Higher Speed using 4 Byte Address Sequence (FASTREAD4B)
SCLK
SI
CS#
SO
SCLK
SI
CS#
SO
31
21 3456789 10 36 37 38 39
30 29 3210
High Impedance
Command 32-bit address
0
40 41 42 44 45 46 47 48 49 50 51 52 53 54
765432 0
1
DATA OUT 1
Configurable
76543210
DATA OUT 2
7
55
765432 0
1
43
0Ch
MSB MSB MSB
Dummy cycles
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Figure 36. 2 x I/O Fast Read using 4 Byte Address Sequence (2READ4B)
21 3456780
SCLK
SI/SIO0
SO/SIO1
CS#
9 10 21 22 23 24
BCh
25 26 27 28 29 30 31 32 33 34
Command Configurable
Dummy Cycle
Mode 3
Mode 0
Mode 3
Mode 0
16 ADD Cycles
A31 A29 A27 A5 A3 A1
A4 A2 AA30 A28 A26
D6 D4
D7 D5
Data
Out 1
Data
Out 2
D2 D0
D3 D1
D0
D1
D6 D4
D7 D5
D2
D3
Figure 37. 4 I/O Fast Read using 4 Byte Address sequence (4READ4B)
21 3456780
SCLK
SIO0
SIO1
SIO2
SIO3
CS#
9 1210 11 13 14
ECh P4 P0
P5 P1
P6 P2
P7 P3
15 16 17 18 19 20 21 22 23 24 25 26
Command
Configurable
Performance
enhance
indicator
Mode 3
Mode 0
8 ADD Cycles
A21 A17 A13 A9 A5 A1
A8 A4 AA20 A16 A12
A23 A19 A15 A11 A7 A3
A10 A6 A2A22 A18 A14
A28 A24
A29 A25
A30 A26
A31 A27
D4 D0
D5 D1
Data
Out 1
Data
Out 2
Data
Out 3
D4 D0
D5 D1
D4 D0
D5 D1
D6 D2
D7 D3
D6 D2
D7 D3
D6 D2
D7 D3
Mode 3
Mode 0
Dummy Cycle
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The wrap around unit is defined within the 256Byte page, with random initial address. It is defined as “wrap-around
mode disable” for the default state of the device. To exit wrap around, it is required to issue another “C0” command
in which data=‘1xh”. Otherwise, wrap around status will be retained until power down or reset command. To change
wrap around depth, it is requried to issue another “C0” command in which data=“0xh”. QPI “EAh” “EBh” and SPI
"EAh" “EBh” support wrap around feature after wrap around is enabled. Burst read is supported in both SPI and QPI
mode. The device is default without Burst read.
Data Wrap Around Wrap Depth
00h Yes 8-byte
01h Yes 16-byte
02h Yes 32-byte
03h Yes 64-byte
1xh No X
0
CS#
SCLK
SIO
C0h D7 D6 D5 D4 D3 D2 D1 D0
1 2 3 4 6 7 8 9 10 1 12 13 14 155
Mode 3
Mode 0
Figure 38. SPI Mode
Figure 39. QPI Mode
0
CS#
SCLK
SIO[3:0]
H0
MSB LSB
L0C0h
1 2 3
Mode 3
Mode 0
Note: MSB=Most Significant Bit
LSB=Least Significant Bit
9-19. Burst Read
This device supports Burst Read in both SPI and QPI mode.
To set the Burst length, following command operation is required to issue command: “C0h” in the first Byte (8-clocks),
following 4 clocks defining wrap around enable with “0h” and disable with“1h”.
The next 4 clocks are to define wrap around depth. Their definitions are as the following table:
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9-20. Performance Enhance Mode
The device could waive the command cycle bits if the two cycle bits after address cycle toggles.
Performance enhance mode is supported in both SPI and QPI mode.
In QPI mode, “EAh” “EBh” "ECh" and SPI "EAh" “EBh” "ECh" commands support enhance mode. The performance
enhance mode is not supported in dual I/O mode.
To enter performance-enhancing mode, P[7:4] must be toggling with P[3:0]; likewise P[7:0]=A5h, 5Ah, F0h or 0Fh
can make this mode continue and skip the next 4READ instruction. To leave enhance mode, P[7:4] is no longer
toggling with P[3:0]; likewise P[7:0]=FFh, 00h, AAh or 55h along with CS# is afterwards raised and then lowered.
Issuing ”FFh” data cycle can also exit enhance mode. The system then will leave performance enhance mode and
return to normal operation.
After entering enhance mode, following CS# go high, the device will stay in the read mode and treat CS# go low of
the first clock as address instead of command cycle.
Another sequence of issuing 4READ instruction especially useful in random access is : CS# goes lowsending
4 READ instruction3-bytes or 4-bytes address interleave on SIO3, SIO2, SIO1 & SIO0 performance enhance
toggling bit P[7:0] 4 dummy cycles (Default) data out still CS# goes high CS# goes low (reduce 4 Read
instruction) 3-bytes or 4-bytes random access address.
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Figure 40. 4 x I/O Read enhance performance Mode Sequence (SPI Mode)
21 3456780
SCLK
SIO0
SIO1
CS#
9 1210 11 13 14
EBh
15 16
n+1 ........... ...... ........... ...........n+7 n+9 n+13
17 18 19 20 21 22 n
SIO2
SIO3
SIO0
SIO1
SIO2
SIO3
Performance
enhance
indicator (Note 1)
SCLK
CS#
Performance
enhance
indicator (Note 1)
Mode 3
Mode 0
A21 A17 A13 A9 A5 A1
A8 A4 AA20 A16 A12
A23 A19 A15 A11 A7 A3
A10 A6 A2A22 A18 A14
P4 P0
P5 P1
P6 P2
P7 P3
A21 A17 A13 A9 A5 A1
A8 A4 AA20 A16 A12
A23 A19 A15 A11 A7 A3
A10 A6 A2A22 A18 A14
P4 P0
P5 P1
P6 P2
P7 P3
Command
Configurable
Dummy Cycle
(Note 2)
6 ADD Cycles
(Note 2)
6 ADD Cycles
(Note 2)
D4 D0
D5 D1
Data
Out 1
Data
Out 2
Data
Out n
D4 D0
D5 D1
D4 D0
D5 D1
D6 D2
D7 D3
D6 D2
D7 D3
D6 D2
D7 D3
D4 D0
D5 D1
Data
Out 1
Data
Out 2
Data
Out n
D4 D0
D5 D1
D4 D0
D5 D1
D6 D2
D7 D3
D6 D2
D7 D3
D6 D2
D7 D3
Mode 3
Mode 0
Configurable
Dummy Cycle
(Note 2)
Notes:
1. If not using performance enhance recommend to keep 1 or 0 in performance enhance indicator.
2. Configuration Dummy cycle numbers will be different depending on the bit6 & bit 7 (DC0 & DC1) setting in
configuration register.
3. Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the address
cycles will be increased.
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Figure 41. 4 x I/O Read enhance performance Mode Sequence (QPI Mode)
SCLK
SIO[3:0]
CS#
A5 A4 A3 A2 A1 A0
Data Out
Data In
EBh X
P(7:4) P(3:0)
X X X H0 L0 H1 L1
Configurable
Dummy Cycle (Note 1)
Configurable
Dummy Cycle (Note 1)
performance
enhance
indicator
SCLK
SIO[3:0]
CS#
A5 A4 A3 A2 A1 A0
Data Out
MSB LSB MSB LSB
MSB LSB MSB LSB
X
P(7:4) P(3:0)
X X X H0 L0 H1 L1
performance
enhance
indicator
n+1 .............
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17
Mode 3
Mode 0
Mode 0
6 Address cycles
(Note)
Notes:
1. Configuration Dummy cycle numbers will be different depending on the bit6 & bit 7 (DC0 & DC1) setting in
configuration register.
2. Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the address
cycles will be increased.
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9-21. Performance Enhance Mode Reset
To conduct the Performance Enhance Mode Reset operation in SPI mode, FFh data cycle(8 clocks in 3-byte
address mode)/3FFh data cycle(10 clocks in 4-byte address mode), should be issued in 1I/O sequence. In QPI
Mode, FFFFFFFFh data cycle(8 clocks in 3-byte address mode)/FFFFFFFFFFh data cycle (10 clocks in 4-byte
address mode), in 4I/O should be issued.
If the system controller is being Reset during operation, the flash device will return to the standard SPI operation.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
Figure 42. Performance Enhance Mode Reset for Fast Read Quad I/O (SPI Mode)
21 34567
Mode 3
Don’t Care
Mode
Mode 3
Mode
SCLK
SIO0
CS#
SIO1
FFh
SIO2
SIO3
Mode Bit Reset
for Quad I/O
Don’t Care
Don’t Care
Figure 43. Performance Enhance Mode Reset for Fast Read Quad I/O (QPI Mode)
21 34567
Mode 3
Mode
Mode 3
Mode
SCLK
SIO[3:0]
CS#
FFFFFFFFh
Mode Bit Reset
for Quad I/O
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Figure 44. Performance Enhance Mode Reset for Fast Read Quad I/O using 4Byte Address Sequence (SPI
Mode)
Mode 3 0 1 2 3 4 5 6 7 8 9
Mode
Mode 3
Mode
SCLK
SIO0
CS#
SIO1
SIO2
SIO3
Mode Bit Reset
for Quad I/O
Don’t Care
3FFh
Don’t Care
Don’t Care
Figure 45. Performance Enhance Mode Reset for Fast Read Quad I/O using 4Byte Address Sequence (QPI
Mode)
Mode 3 0 1 2 3 4 5 6 7 8 9
Mode
Mode 3
Mode
SCLK
CS#
Mode Bit Reset
for Quad I/O
FFFFFFFFFFh
SIO[3:0]
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Fast Boot Register (FBR)
Note: If FBSD = 11, the maximum clock frequency is 133 MHz
If FBSD = 10, the maximum clock frequency is 104 MHz
If FBSD = 01, the maximum clock frequency is 84 MHz
If FBSD = 00, the maximum clock frequency is 70 MHz
9-22. Fast Boot
The Fast Boot Feature provides the ability to automatically execute read operation after power on cycle or reset
without any read instruction.
A Fast Boot Register is provided on this device. It can enable the Fast Boot function and also define the number of
delay cycles and start address (where boot code being transferred). Instruction WRFBR (write fast boot register) and
ESFBR (erase fast boot register) can be used for the status configuration or alternation of the Fast Boot Register
bit. RDFBR (read fast boot register) can be used to verify the program state of the Fast Boot Register. The default
number of delay cycles is 13 cycles, and there is a 16bytes boundary address for the start of boot code access.
When CS# starts to go low, data begins to output from default address after the delay cycles (default as 13 cycles).
After CS# returns to go high, the device will go back to standard SPI mode and user can start to input command. In
the fast boot data out process from CS# goes low to CS# goes high, a minimum of one byte must be output.
Once Fast Boot feature has been enabled, the device will automatically start a read operation after power on cycle,
reset command, or hardware reset operation.
The fast Boot feature can support Single I/O and Quad I/O interface. If the QE bit of Status Register is “0”, the data
is output by Single I/O interface. If the QE bit of Status Register is set to “1”, the data is output by Quad I/O interface.
Bits Description Bit Status Default State Type
31 to 4 FBSA (FastBoot Start
Address)
16 bytes boundary address for the start of boot
code access. FFFFFFF Non-
Volatile
3 x 1 Non-
Volatile
2 to 1 FBSD (FastBoot Start
Delay Cycle)
00: 7 delay cycles
01: 9 delay cycles
10: 11 delay cycles
11: 13 delay cycles
11 Non-
Volatile
0 FBE (FastBoot Enable) 0=FastBoot is enabled.
1=FastBoot is not enabled. 1Non-
Volatile
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Figure 46. Fast Boot Sequence (QE=0)
n+2
Delay Cycles
0
76543210
Data Out 1
High Impedance
MSB
76543210
Data Out 2
MSB
7
SCLK
SI
CS#
SO
Mode 3
Mode 0
------
nn+1 n+3 n+4 n+5 n+6 n+7 n+8 n+9 n+10 n+11n+12n+13n+14n+15
Don’t care or High Impedance
MSB
Figure 47. Fast Boot Sequence (QE=1)
40
5 1 5 1
4 4 4
000
5 1
-------n
High Impedance
0
6 2 6 2 6 2
7 3 7 3 7 3
6 2
7 3
SCLK
CS#
SIO0
SIO1
SIO3
SIO2
MSB
Delay Cycles
n+1 n+2 n+3 n+5 n+6 n+7 n+8 n+9
Mode 3
Mode 0
Data
Out 1
51
High Impedance
High Impedance
High Impedance
Data
Out 2
Data
Out 3
Data
Out 4
4
5
6
7
Note: If FBSD = 11, delay cycles is 13 and n is 12.
If FBSD = 10, delay cycles is 11 and n is 10.
If FBSD = 01, delay cycles is 9 and n is 8.
If FBSD = 00, delay cycles is 7 and n is 6.
Note: If FBSD = 11, delay cycles is 13 and n is 12.
If FBSD = 10, delay cycles is 11 and n is 10.
If FBSD = 01, delay cycles is 9 and n is 8.
If FBSD = 00, delay cycles is 7 and n is 6.
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Figure 48. Read Fast Boot Register (RDFBR) Sequence
Figure 49. Write Fast Boot Register (WRFBR) Sequence
Figure 50. Erase Fast Boot Register (ESFBR) Sequence
21 34567
High-Z
0
18h
Command
SCLK
SI
CS#
SO
Mode 3
Mode 0
21 34567890
SCLK
CS#
SI
SO
16h
Command
Mode 3 3710 38 39 40 41
Mode 0
MSB
7 6 7 65 25 2426
High-Z
MSB
Data Out 1 Data Out 2
21 34567890
MSB
SCLK
CS#
SI
17h
Command
Mode 3 37 38 39
Mode 0
Fast Boot Register
SO
High-Z
7 6 25 2426
10
5
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Figure 51. Sector Erase (SE) Sequence (SPI Mode)
21 3456789 29 30 310
A23 A22 A2 A1 A0
MSB
SCLK
CS#
SI
20h
Command
Mode 3
Mode 0
24-Bit Address
(Note)
Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the
address cycles will be increased.
Figure 52. Sector Erase (SE) Sequence (QPI Mode)
SCLK
SIO[3:0]
CS#
20h
2 3 5 710
A5 A4
MSB
4
A3 A2
6
A1 A0
Command
Mode 3
Mode 0
24-Bit Address
(Note)
Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the
address cycles will be increased.
9-23. Sector Erase (SE)
The Sector Erase (SE) instruction is for erasing the data of the chosen sector to be "1". The instruction is used for
any 4K-byte sector. A Write Enable (WREN) instruction must execute to set the Write Enable Latch (WEL) bit before
sending the Sector Erase (SE). Any address of the sector (see "Table 4. Memory Organization") is a valid address
for Sector Erase (SE) instruction. The CS# must go high exactly at the byte boundary (the least significant bit of the
address byte been latched-in); otherwise, the instruction will be rejected and not executed.
The default read mode is 3-byte address, to access higher address (4-byte address) which requires to enter the
4-byte address read mode or to define EAR bit. Address bits [Am-A12] (Am is the most significant address) select
the sector address.
To enter the 4-byte address mode, please refer to the enter 4-byte mode (EN4B) Mode section.
The sequence of issuing SE instruction is: CS# goes low→ sending SE instruction code→ 3-byte or 4-byte address
on SI→ CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
The self-timed Sector Erase Cycle time (tSE) is initiated as soon as Chip Select (CS#) goes high. The Write in
Progress (WIP) bit still can be checked while the Sector Erase cycle is in progress. The WIP sets 1 during the tSE
timing, and clears when Sector Erase Cycle is completed, and the Write Enable Latch (WEL) bit is cleared. If the
Block is protected by BP bits (WPSEL=0; Block Protect Mode) or SPB/DPB (WPSEL=1; Advanced Sector Protect
Mode), the Sector Erase (SE) instruction will not be executed on the block.
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9-24. Block Erase (BE32K)
The Block Erase (BE32K) instruction is for erasing the data of the chosen block to be "1". The instruction is used for
32K-byte block erase operation. A Write Enable (WREN) instruction be executed to set the Write Enable Latch (WEL)
bit before sending the Block Erase (BE32K). Any address of the block (see "Table 4. Memory Organization") is a
valid address for Block Erase (BE32K) instruction. The CS# must go high exactly at the byte boundary (the least
significant bit of address byte been latched-in); otherwise, the instruction will be rejected and not executed.
Address bits [Am-A15] (Am is the most significant address) select the 32KB block address. The default read mode
is 3-byte address, to access higher address (4-byte address) which requires to enter the 4-byte address read mode
or to define EAR bit. To enter the 4-byte address mode, please refer to the enter 4-byte mode (EN4B) Mode section.
The sequence of issuing BE32K instruction is: CS# goes low→ sending BE32K instruction code→ 3-byte or 4-byte
address on SI→CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
The self-timed Block Erase Cycle time (tBE32K) is initiated as soon as Chip Select (CS#) goes high. The Write in
Progress (WIP) bit still can be checked while during the Block Erase cycle is in progress. The WIP sets during the
tBE32K timing, and clears when Block Erase Cycle is completed, and the Write Enable Latch (WEL) bit is cleared.
If the Block is protected by BP bits (WPSEL=0; Block Protect Mode) or SPB/DPB (WPSEL=1; Advanced Sector
Protect Mode), the Block Erase (BE32K) instruction will not be executed on the block.
Figure 53. Block Erase 32KB (BE32K) Sequence (SPI Mode)
21 3456789 29 30 310
A23 A22 A2 A0
A1
MSB
SCLK
CS#
SI
52h
Command
Mode 3
Mode 0
24-Bit Address
(Note)
Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the
address cycles will be increased.
Figure 54. Block Erase 32KB (BE32K) Sequence (QPI Mode)
SCLK
SIO[3:0]
CS#
52h
2 3 5 710
A5 A4
MSB
4
A3 A2
6
A1 A0
Command
Mode 3
Mode 0
24-Bit Address
(Note)
Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the
address cycles will be increased.
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9-25. Block Erase (BE)
The Block Erase (BE) instruction is for erasing the data of the chosen block to be "1". The instruction is used
for 64K-byte block erase operation. A Write Enable (WREN) instruction must be executed to set the Write Enable
Latch (WEL) bit before sending the Block Erase (BE). Any address of the block (Please refer to "Table 4. Memory
Organization") is a valid address for Block Erase (BE) instruction. The CS# must go high exactly at the byte boundary (the
least significant bit of address byte been latched-in); otherwise, the instruction will be rejected and not executed.
The default read mode is 3-byte address, to access higher address (4-byte address) which requires to enter the
4-byte address read mode or to define EAR bit. To enter the 4-byte address mode, please refer to the enter 4-byte
mode (EN4B) Mode section.
The sequence of issuing BE instruction is: CS# goes low→ sending BE instruction code→ 3-byte or 4-byte address
on SI→ CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
The self-timed Block Erase Cycle time (tBE) is initiated as soon as Chip Select (CS#) goes high. The Write in
Progress (WIP) bit still can be checked while the Block Erase cycle is in progress. The WIP sets during the tBE
timing, and clears when Block Erase Cycle is completed, and the Write Enable Latch (WEL) bit is reset. If the Block
is protected by BP bits (WPSEL=0; Block Protect Mode) or SPB/DPB (WPSEL=1; Advanced Sector Protect Mode),
the Block Erase (BE) instruction will not be executed on the block.
Figure 55. Block Erase (BE) Sequence (SPI Mode)
21 3456789 29 30 310
A23 A22 A2 A0
A1
MSB
SCLK
CS#
SI
D8h
Command
Mode 3
Mode 0
24-Bit Address
(Note)
Figure 56. Block Erase (BE) Sequence (QPI Mode)
SCLK
SIO[3:0]
CS#
D8h
2 310
A5 A4
MSB
4 5
A3 A2
6 7
A1 A0
Command
Mode 3
Mode 0
24-Bit Address
(Note)
Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the
address cycles will be increased.
Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the
address cycles will be increased.
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9-26. Chip Erase (CE)
The Chip Erase (CE) instruction is for erasing the data of the whole chip to be "1". A Write Enable (WREN)
instruction must be executed to set the Write Enable Latch (WEL) bit before sending the Chip Erase (CE). The CS#
must go high exactly at the byte boundary, otherwise the instruction will be rejected and not executed.
The sequence of issuing CE instruction is: CS# goes low→sending CE instruction code→CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
The self-timed Chip Erase Cycle time (tCE) is initiated as soon as Chip Select (CS#) goes high. The Write in
Progress (WIP) bit still can be checked while the Chip Erase cycle is in progress. The WIP sets during the tCE
timing, and clears when Chip Erase Cycle is completed, and the Write Enable Latch (WEL) bit is cleared.
When the chip is under "Block protect (BP) Mode" (WPSEL=0). The Chip Erase (CE) instruction will not be
executed, if one (or more) sector is protected by BP3-BP0 bits. It will be only executed when BP3-BP0 all set to "0".
When the chip is under "Advances Sector Protect Mode" (WPSEL=1). The Chip Erase (CE) instruction will be
executed on unprotected block. The protected Block will be skipped. If one (or more) 4K byte sector was protected
in top or bottom 64K byte block, the protected block will also skip the chip erase command.
Figure 57. Chip Erase (CE) Sequence (SPI Mode)
21 345670
60h or C7h
SCLK
SI
CS#
Command
Mode 3
Mode 0
Figure 58. Chip Erase (CE) Sequence (QPI Mode)
SCLK
SIO[3:0]
CS#
60h or C7h
0 1
Command
Mode 3
Mode 0
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9-27. Page Program (PP)
The Page Program (PP) instruction is for programming the memory to be "0". A Write Enable (WREN) instruction
must be executed to set the Write Enable Latch (WEL) bit before sending the Page Program (PP). The device
programs only the last 256 data bytes sent to the device. If the entire 256 data bytes are going to be programmed,
A7-A0 (The eight least significant address bits) should be set to 0. The last address byte (the 8 least significant
address bits, A7-A0) should be set to 0 for 256 bytes page program. If A7-A0 are not all zero, transmitted data that
exceed page length are programmed from the starting address (24-bit address that last 8 bit are all 0) of currently
selected page. If the data bytes sent to the device exceeds 256, the last 256 data byte is programmed at the request
page and previous data will be disregarded. If the data bytes sent to the device has not exceeded 256, the data
will be programmed at the request address of the page. There will be no effort on the other data bytes of the same
page.
The default read mode is 3-byte address, to access higher address (4-byte address) which requires to enter the
4-byte address read mode or to define EAR bit. To enter the 4-byte address mode, please refer to the enter 4-byte
mode (EN4B) Mode section.
The sequence of issuing PP instruction is: CS# goes low→ sending PP instruction code→ 3-byte or 4-byte address
on SI→ at least 1-byte on data on SI→ CS# goes high.
The CS# must be kept to low during the whole Page Program cycle; The CS# must go high exactly at the byte
boundary( the latest eighth bit of data being latched in), otherwise the instruction will be rejected and will not be
executed.
The self-timed Page Program Cycle time (tPP) is initiated as soon as Chip Select (CS#) goes high. The Write in
Progress (WIP) bit still can be checked while the Page Program cycle is in progress. The WIP sets during the tPP
timing, and clears when Page Program Cycle is completed, and the Write Enable Latch (WEL) bit is cleared. If the
page is protected by BP bits (WPSEL=0; Block Protect Mode) or SPB/DPB (WPSEL=1; Advanced Sector Protect
Mode), the Page Program (PP) instruction will not be executed.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
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Figure 59. Page Program (PP) Sequence (SPI Mode)
4241 43 44 45 46 47 48 49 50 52 53 54 5540
23
21 3456789 10 28 29 30 31 32 33 34 35
22 21 3210
36 37 38
0
765432 0
1
Data Byte 1
39
51
765432 0
1
Data Byte 2
765432 0
1
Data Byte 3 Data Byte 256
2079
2078
2077
2076
2075
2074
2073
765432 0
1
2072
MSB MSB
MSB MSB MSB
SCLK
CS#
SI
SCLK
CS#
SI
02h
Command
Mode 3
Mode 0
24-Bit Address
(Note)
Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the
address cycles will be increased.
Figure 60. Page Program (PP) Sequence (QPI Mode)
210
SCLK
SIO[3:0]
CS#
Data Byte
2
Data In
02h
A5 A4 A3 A2 A1 A0
H0 L0 H1 L1 H2 L2 H3 L3 H255 L255
Data Byte
1
Data Byte
3
Data Byte
4
Data Byte
256
Command
Mode 3
Mode 0
24-Bit Address
(Note)
Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the
address cycles will be increased.
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9-28. 4 x I/O Page Program (4PP)
The Quad Page Program (4PP) instruction is for programming the memory to be "0". A Write Enable (WREN)
instruction must be executed to set the Write Enable Latch (WEL) bit and Quad Enable (QE) bit must be set to
"1" before sending the Quad Page Program (4PP). The Quad Page Programming takes four pins: SIO0, SIO1,
SIO2, and SIO3 as address and data input, which can improve programmer performance and the effectiveness of
application. The other function descriptions are as same as standard page program.
The default read mode is 3-byte address, to access higher address (4-byte address) which requires to enter the
4-byte address read mode or to define EAR bit. To enter the 4-byte address mode, please refer to the enter 4-byte
mode (EN4B) Mode section.
The sequence of issuing 4PP instruction is: CS# goes low→ sending 4PP instruction code→ 3-byte or 4-byte
address on SIO[3:0]→ at least 1-byte on data on SIO[3:0]→CS# goes high.
If the page is protected by BP bits (WPSEL=0; Block Protect Mode) or SPB/DPB (WPSEL=1; Advanced Sector
Protect Mode), the Quad Page Program (4PP) instruction will not be executed.
A20
A21 A17
A16 A12 A8 A4 A0
A13 A9 A5 A1
4 4 4 40 0 0 0
5 5 5 51 1 1 1
21 3456789
6 Address cycle Data
Byte 1
Data
Byte 2
Data
Byte 3
Data
Byte 4
0
A22 A18 A14 A10 A6 A2
A23 A19 A15 A11 A7 A3
6 6 6 62 2 2 2
7 7 7 73 3 3 3
SCLK
CS#
SIO0
SIO1
SIO3
SIO2
38h
Command
10 11 12 13 14 15 16 17 18 19 20 21
Mode 3
Mode 0
Figure 61. 4 x I/O Page Program (4PP) Sequence (SPI Mode only)
Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the
address cycles will be increased.
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9-29. Deep Power-down (DP)
The Deep Power-down (DP) instruction is for setting the device to minimum power consumption (the standby
current is reduced from ISB1 to ISB2). The Deep Power-down mode requires the Deep Power-down (DP) instruction
to enter, during the Deep Power-down mode, the device is not active and all Write/Program/Erase instruction are
ignored. When CS# goes high, it's only in deep power-down mode not standby mode. It's different from Standby
mode.
The sequence of issuing DP instruction is: CS# goes low→sending DP instruction code→CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
Once the DP instruction is set, all instruction will be ignored except the Release from Deep Power-down mode (RDP)
and Read Electronic Signature (RES) instruction and softreset command. (those instructions allow the ID being
reading out). When Power-down, or software reset command the deep power-down mode automatically stops, and
when power-up, the device automatically is in standby mode. For DP instruction the CS# must go high exactly at the
byte boundary (the latest eighth bit of instruction code been latched-in); otherwise, the instruction will not executed.
As soon as Chip Select (CS#) goes high, a delay of tDP is required before entering the Deep Power-down mode.
Figure 62. Deep Power-down (DP) Sequence (SPI Mode)
21 345670tDP
Deep Power-down Mode
Stand-by Mode
SCLK
CS#
SI
B9h
Command
Mode 3
Mode 0
Figure 63. Deep Power-down (DP) Sequence (QPI Mode)
SCLK
SIO[3:0]
CS#
B9h
0 1
tDP
Deep Power-down Mode
Stand-by Mode
Command
Mode 3
Mode 0
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9-30. Enter Secured OTP (ENSO)
The ENSO instruction is for entering the additional 4K-bit secured OTP mode. While device is in 4K-bit secured
OTPmode, main array access is not available. The additional 4K-bit secured OTP is independent from main array
and may be used to store unique serial number for system identifier. After entering the Secured OTP mode, follow
standard read or program procedure to read out the data or update data. The Secured OTP data cannot be updated
again once it is lock-down.
The sequence of issuing ENSO instruction is: CS# goes low→ sending ENSO instruction to enter Secured OTP
mode→ CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
Please note that after issuing ENSO command user can only access secure OTP region with standard read or
program procedure. Furthermore, once security OTP is lock down, only read related commands are valid.
9-31. Exit Secured OTP (EXSO)
The EXSO instruction is for exiting the additional 4K-bit secured OTP mode.
The sequence of issuing EXSO instruction is: CS# goes low→ sending EXSO instruction to exit Secured OTP
mode→ CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
9-32. Read Security Register (RDSCUR)
The RDSCUR instruction is for reading the value of Security Register bits. The Read Security Register can be read
at any time (even in program/erase/write status register/write security register condition) and continuously.
The sequence of issuing RDSCUR instruction is : CS# goes low→sending RDSCUR instruction→Security Register
data out on SO→ CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
9-33. Write Security Register (WRSCUR)
The WRSCUR instruction is for changing the values of Security Register Bits. The WREN (Write Enable) instruction
is required before issuing WRSCUR instruction. The WRSCUR instruction may change the values of bit1 (LDSO
bit) for customer to lock-down the 4K-bit Secured OTP area. Once the LDSO bit is set to "1", the Secured OTP area
cannot be updated any more.
The sequence of issuing WRSCUR instruction is :CS# goes low→ sending WRSCUR instruction → CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
The CS# must go high exactly at the boundary; otherwise, the instruction will be rejected and not executed.
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bit7 bit6 bit5 bit4 bit3 bit2 bit1 bit0
WPSEL E_FAIL P_FAIL Reserved
ESB
(Erase
Suspend bit)
PSB
(Program
Suspend bit)
LDSO
(indicate if
lock-down)
Secured OTP
indicator bit
0=normal
WP mode
1=individual
mode
(default=0)
0=normal
Erase
succeed
1=indicate
Erase failed
(default=0)
0=normal
Program
succeed
1=indicate
Program
failed
(default=0)
-
0=Erase
is not
suspended
1= Erase
suspended
(default=0)
0=Program
is not
suspended
1= Program
suspended
(default=0)
0 = not lock-
down
1 = lock-down
(cannot
program/
erase
OTP)
0 = non-
factory
lock
1 = factory
lock
Non-volatile
bit (OTP) Volatile bit Volatile bit Volatile bit Volatile bit Volatile bit
Non-volatile
bit
(OTP)
Non-volatile
bit (OTP)
Table 9. Security Register Definition
Security Register
The definition of the Security Register bits is as below:
Write Protection Selection bit. Please reference to "Write Protection Selection bit"
Erase Fail bit. The Erase Fail bit is a status flag, which shows the status of last Erase operation. It will be set to "1",
if the erase operation fails. It will be set to "0", if the last operation is success. Please note that it will not interrupt or
stop any operation in the flash memory.
Program Fail bit. The Program Fail bit is a status flag, which shows the status of last Program operation. It will be
set to "1", if the program operation fails or the program region is protected. It will be set to "0", if the last operation is
success. Please note that it will not interrupt or stop any operation in the flash memory.
Erase Suspend bit. Erase Suspend Bit (ESB) indicates the status of Erase Suspend operation. Users may use
ESB to identify the state of flash memory. After the flash memory is suspended by Erase Suspend command, ESB
is set to "1". ESB is cleared to "0" after erase operation resumes.
Program Suspend bit. Program Suspend Bit (PSB) indicates the status of Program Suspend operation. Users may
use PSB to identify the state of flash memory. After the flash memory is suspended by Program Suspend command,
PSB is set to "1". PSB is cleared to "0" after program operation resumes.
Secured OTP Indicator bit. The Secured OTP indicator bit shows the chip is locked by factory or not. When it is
"0", it indicates non-factory lock; "1" indicates factory-lock.
Lock-down Secured OTP (LDSO) bit. By writing WRSCUR instruction, the LDSO bit may be set to "1" for
customer lock-down purpose. However, once the bit is set to "1" (lock-down), the LDSO bit and the 4K-bit Secured
OTP area cannot be updated any more. While it is in 4K-bit secured OTP mode, main array access is not allowed.
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9-34. Write Protection Selection (WPSEL)
There are two write protection methods provided on this device, (1) Block Lock (BP) protection mode (2) Advanced
Sector protection mode. If WPSEL=0, flash is under BP protection mode. If WPSEL=1, flash is under Advanced
Sector protection mode. The default value of WPSEL is “0”. WPSEL command can be used to set WPSEL=1.
Please note that WPSEL is an OTP bit. Once WPSEL is set to 1, there is no chance to recovery WPSEL back
to “0”. If the flash is put on BP mode, the Advanced Sector protection mode is disabled. Contrarily, if flash is on the
Advanced Sector protection mode, the BP mode is disabled.
Every time after the system is powered-on, and the Security Register bit 7 is checked to be WPSEL=1, all
the blocks or sectors will be write protected by Dynamic Protected Bit (DPB) in default. User may only unlock
the blocks or sectors via GBULK instruction. Program or erase functions can only be operated after the Unlock
instruction is conducted.
When WPSEL = 0: Block Lock (BP) protection mode,
Array is protected by BP3~BP0 and BP bits are protected by “SRWD=1 and WP#=0”, where SRWD is bit 7 of status
register that can be set by WRSR command.
When WPSEL =1: Advanced Sector protection mode,
Blocks are individually protected by their own SPB or DPB lock bits which are set to “1” after power up. When the
system accepts and executes WPSEL instruction, the bit 7 in security register will be set. It will activate WRLR,
RDLR, WRPASS, RDPASS, PASSULK, WRSPB, ESSPB, SPBLK, RDSPBLK, WRDPB, RDDPB, GBLK, GBULK
etc instructions to conduct block lock protection and replace the original Software Protect Mode (SPM) use (BP3~BP0)
indicated block methods. Under the Advanced Sector protection mode (WPSEL=1), hardware protection is
performed by driving WP#=0. Once WP#=0 all array blocks/sectors are protected regardless of the contents of SPB
or DPB lock bits.
The sequence of issuing WPSEL instruction is: CS# goes low sending WPSEL instruction to enter the individual
block protect mode → CS# goes high.
Write Protection Selection
Start
(Default in BP Mode)
Set
WPSEL Bit
WPSEL=0WPSEL=1
Bit 2 =0
Bit 1 =0
Block Protection
(BP)
Advance
Sector Protection
Set
Lock Register
Password
Protection
Solid
Protection
Dynamic
Protection
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Figure 64. WPSEL Flow
RDSCUR command
RDSR command
RDSCUR command
WPSEL set successfully
Yes
Yes
WPSEL set fail
No
start
WPSEL=1?
WIP=0? No
WPSEL disable,
block protected by BP[3:0]
Yes
No
WREN command
WPSEL=1?
WPSEL command
WPSEL enable.
Block protected by Advance Sector Protection
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9-35. Advanced Sector Protection
There are two ways to implement software Advanced Sector Protection on this device: Password method or Sol id
method. Through these two protection methods, user can disable or enable the programming or erasing op eration
to any individual sector or all sectors.
There is a non-volatile (SPB) and volatile (DPB) protection bit related to the single sector in main flash array. Each
of the sectors is protected from programming or erasing operation when the bit is set. The temporary unprotect solid
write protect bit (USPB) can temporarily unprotect the sectors protected by SPB.
The figure below helps describing an overview of these methods. The device is default to the Solid mode when
shipped from factory. The detail algorithm of advanced sector protection is shown as follows:
Figure 65. Advanced Sector Protection Overview
Start
Bit 1=0 Bit 2=0
Password Protection Mode
Set
Lock Register ?
Set
SPB Lock Bit ?
SPBLK = 0
SPBLK = 1
SPB Lock bit Unlocked
SPB is changeable
SPB Access Register
(SPB)
Dynamic Protect Bit Register
(DPB)
SPB=1 Write Protect
SPB=0 Write Unprotect
SPB 0
SPB 1
SPB 2
:
:
SPB N-1
SPB N
SA 0
SA 1
SA 2
:
:
SA N-1
SA N
DPB 0
DPB 1
DPB 2
:
:
DPB N-1
DPB N
SPB Lock bit locked
All SPB can not be changeable
Solid Protection Mode
Set 64 bit Password
Sector Array
DPB=1 sector protect
DPB=0 sector unprotect
Temporary Unprotect
SPB bit (USPB)
USPB=0 SPB bit is disabled
USPB=1 SPB bit is effective
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9-35-1. Lock Register
User can choose favorite sector protecting method via setting Lock Register bits 1 and 2 . Lock Register is a 16-
bit one-time programmable register. Once bit 1 or bit2 has been programming (cleared to "0"), they will be locked
in that mode and the others will be disabled permanently. bit1 and bit2 can not be programmed at the same time,
otherwise the device will abort the operation.
If user selects Password Protection mode, the password setting is required. User can set password by issuing
WRPASS command.
Lock Register
Notes:
1. While bit2 or bit1 has been "0" status, other bit can't be changed any more. If set lock register program mode,
program fail will be set to "1".
2. While bit2 and bit 1 is "1" status,other bits can be programed, program fail will be set to "1".
Bit 15-3 Bit 2 Bit 1 Bit0
Reserved Password Protection Mode Lock Bit Solid Protection Mode Lock Bit Reserved
x
0=Password Protection Mode Enable
1= Password Protection Mode not
enable (Default =1)
0=Solid Protection Mode Enable
1= Solid Protection Mode not enable (Default =1) x
OTP OTP OTP OTP
Figure 66. Read Lock Register (RDLR) Sequence
21 3456789 10 11 12 13 14 15
command
0
76543210
High-Z
MSB
15 14 13 12 11 10 9 8
Register OutRegister Out
MSB
7
SCLK
SI
CS#
SO
2Dh
Mode 3
Mode 0
Figure 67. Write Lock Register (WRLR) Sequence (SPI Mode)
21 3456789 10 11 12 13 14 15
Lock Register In
0
MSB
SCLK
SI
CS#
SO
2Ch
High-Z
Command
Mode 3
Mode 0
16 17 18 19 20 21 22 23
765 4321 0 15 14 13 12 11 10 9 8
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9-35-2. SPB Lock Bit (SPBLB)
The Solid Protection Bit Lock Bit (SPBLB) is assigned to control all SPB status. It is a unique and volatile.
The default status of this register is determined by Lock Register bit 1 and bit 2 status. Refer to SPB Lock Register
for more SPB Lock information.
When under Solid Protect Mode, there is no software command sequence requested to unlock this bit. To clear the
SPB lock bit, just take the device through a reset or a power-up cycle. When under Password Protected Mode, in
order to prevent modified, the SPB Lock Bit must be set after all SPBs are setting the desired status.
SPB Lock Register
Bit Description Bit Status Default Type
7-1 Reserved X 0000000 Volatile
0SPBLK (Lock SPB Bit) 0= SPB bit protected
1=SPB bit unprotected
Solid protected Mode=1
Password Protected Mode=0 Volatile
Figure 68. SPB Lock Bit Set (SPBLK) Sequence
21 34567
High-Z
0
A6h
Command
SCLK
SI
CS#
SO
Mode 3
Mode 0
Figure 69. Read SPB Lock Register (RDSPBLK) Sequence
21 3456789 10 11 12 13 14 15
command
0
76543210
High-Z
MSB
76543210
Register OutRegister Out
MSB
7
SCLK
SI
CS#
SO
A7h
Mode 3
Mode 0
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9-35-3. Solid Protection Bits
The Solid write Protection bit (SPB) is a nonvolatile bit with the same endurances as the Flash memory. It is
assigned to each sector individually. The SPB is Preprogramming, and its verification prior to erasure are managed
by the device, so system monitoring is not necessary.
When a SPB is set to “1”, the associated sector is protected, preventing any program or erase operation on this
sector. The SPB bits are set individually by WRSPB command. However, it cannot be cleared individually. Issuing
the ESSPB command will erase all SPB in the same time.
To unprotect a protected sector (corresponding SPB cleared to “0”), the SPB lock bit must be unlocked first. Under
password protection mode (lock register bit 2 set as "0"), a PASSULK command is requested before unlocking SPB
lock bit. However, while the device is under Solid Protection mode (lock register bit 1 set as "0"), just a reset or a
power-up cycle can unlock the SPB lock bit.
After the SPB lock bit unlocked, the SPB status can be changed for desired settings. To lock the Solid Protection
Bits after the modification has finished, the SPB Lock Bit must be set once again.
To verify the programming state of the SPB for a given sector, issuing a RDSPB Command to the device is required.
Note:
1. Once SPB Lock Bit is set, its Program or erase command will not be executed and times-out without programming
or erasing the SPB.
SPB Register
Bit Description Bit Status Default Type
7 to 0 SPB (Solid protected Bit) 00h= SPB for the sector address unprotected
FFh= SPB for the sector address protected 00h Non-volatile
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Figure 70. Read SPB Status (RDSPB) Sequence
21 34567890
MSB
SCLK
CS#
SI
SO
E2h
Command
Mode 3 37 38 39 40 41 42
Mode 0
32-Bit Address
A31 A30 A2 A1 A0
76543210
High-Z
MSB
Data Out
43 44 45 46 47
Figure 71. SPB Erase (ESSPB) Sequence
21 34567
High-Z
0
E4h
Command
SCLK
SI
CS#
SO
Mode 3
Mode 0
Figure 72. SPB Program (WRSPB) Sequence
21 34567890
MSB
SCLK
CS#
SI
E3h
Command
Mode 3 37 38 39
Mode 0
32-Bit Address
A31 A30 A2 A1 A0
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9-35-4. Dynamic Write Protection Bits
The Dynamic Protection features a volatile type protection to each individual sector. It can protect sectors from
unintentional change, and is easy to disable when there are necessary changes.
All DPBs are default as protected (FFh) after reset or upon power up cycle. Via setting up Dynamic Protection bit (DPB)
by write DPB command (WRDPB), user can cancel the Dynamic Protection of associated sector.
The Dynamic Protection only works on those unprotected sectors whose SPBs are cleared. After the DPB state is
cleared to “0”, the sector can be modified if the SPB state is unprotected state.
DPB Register
Bit Description Bit Status Default Type
7 to 0 DPB (Dynamic protected Bit) 00h= DPB for the sector address unprotected
FFh=DPB for the sector address protected FFh Volatile
Figure 73. Read DPB Register (RDDPB) Sequence
21 34567890
MSB
SCLK
CS#
SI
SO
E0h
Command
Mode 3 37 38 39 40 41 42
Mode 0
32-Bit Address
A31 A30 A2 A1 A0
76543210
High-Z
MSB
Data Out
43 44 45 46 47
Figure 74. Write DPB Register (WRDPB) Sequence
21 34567890
MSB
SCLK
CS#
SI
E1h
Command
Mode 3 37 38 39 40 41 42
Mode 0
32-Bit Address
A31 A30 A2 A1 A0
76543210
MSB
Data Byte 1
43 44 45 46 47
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9-35-5. Temporary Un-protect Solid write protect bit (USPB)
Temporary Un-protect Solid write Protect Bit is volatile bit. Software can temporarily unprotect write protect sectors
despite of SPBs' property when DPBs are cleared. While the USPB is Unprotected, all the SPBs’ property is
masked.
Notes:
1. Upon power up, the USPB status is default protected. The USPB can be unprotected (to “0”) or protected (to “1”)
as often as needed. The hardware reset will reset USPB/DPB to their default values.
2. Please refer to "9-35-7. Sector Protection States Summary Table" for the sector state with the protection status of
DPB/SPB/USPB bits.
9-35-6. Gang Block Lock/Unlock (GBLK/GBULK)
These instructions are only effective after WPSEL was executed. The GBLK/GBULK instruction is a chip-based
protected or unprotected operation. It can enable or disable all DPB.
The WREN (Write Enable) instruction is required before issuing GBLK/GBULK instruction.
The sequence of issuing GBLK/GBULK instruction is: CS# goes low send GBLK/GBULK (7Eh/98h) instruction
→CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
The CS# must go high exactly at the byte boundary, otherwise, the instruction will be rejected and not be executed.
9-35-7. Sector Protection States Summary Table
Protection Status Sector State
DPB bit SPB bit USPB bit
0 0 0 Unprotect
0 0 1 Unprotect
0 1 0 Unprotect
0 1 1 Protect
1 0 0 Protect
1 0 1 Protect
1 1 0 Protect
1 1 1 Protect
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9-35-8. Password Protection Mode
The security level of Password Protection Method is higher than the Solid protection mode. The 64 bit password is
requested before modify SPB lock bit status. When device is under password protection mode, the SPB lock bit is set “0”,
after a power-up cycle or Reset Command.
A correct password is required for password Unlock command, to unlock the SPB lock bit. Await 2us is necessary to
unlocked the device after valid password is given. After that, the SPB bits are allows to be changed. The Password
Unlock command are issued slower than 2 μs every time, to prevent hacker from trying all the 64-bit password
combinations.
To place the device in password protection mode, a few more steps are required. First, prior to entering the
password protection mode, it is necessary to set a 64-bit password to verify it. Password verification is only
allowed during the password programming operation. Second, the password protection mode is then activated
by programming the Password Protection Mode Lock Bit to”0”. This operation is not reversible. Once the bit is
programmed, it cannot be erased, and the device remains permanently in password protection mode, and the 64-bit
password can neither be retrieved nor reprogrammed. Moreover, all commands to the address where the password
is stored are disabled.
The password is all “1”s when shipped from the factory, it is only capable of programming "0"s under WRPASS
command. All 64-bit password combinations are valid as a password. No special address is required for
programming the password. The password is no longer readable after the Password Protection mode is selected by
programming Lock register bit 2 to "0".
Once sector under protected status, device will ignores the program/erase command, enable status polling and
returns to read mode without contents change. The DPB, SPB and SPB lock bit status of each sector can be
verified by issuing DPB, SPB and SPB Lock bit read commands.
The unlock operation may fail if the password provided by password unlock command does not match the
previously entered password. It causes the same result when a programming operation is performed on a
protected sector. The P_ERR bit is set to 1 and the WIP Bit remains set.
It is not allowed to execute the Password Unlock command faster than every 100us ± 20us. The reason behind it
is to make it impossible to hack into the system by running through all the combinations of a set of 64-bit password (58
million years). To verify if the device has completed the password unlock command and is available to process
a new password command, the Read Status Register command is needed to read the WIP bit. When a valid
password is provided the password unlock command does not insert the 100us delay before returning the WIP
bit to zero.
It is not feasible to set the SPB Lock bit if the password is missing after the Password Mode is selected.
Password Register (PASS)
Bits Field
Name Function Type Default State Description
63 to 0 PWD Hidden
Password OTP FFFFFFFFFFFFFFFFh
Non-volatile OTP storage of 64 bit password. The
password is no longer readable after the password
protection mode is selected by programming Lock
register bit 2 to zero.
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9-36. Program/Erase Suspend/Resume
The device allow the interruption of Sector-Erase, Block-Erase or Page-Program operations and conduct other
operations.
After issue suspend command, the system can determine if the device has entered the Erase-Suspended mode
through Bit2 (PSB) and Bit3 (ESB) of security register. (please refer to "Table 9. Security Register Definition")
The latency time of erase operation:
Suspend to suspend ready timing: 20us.
Resume to another suspend timing: 1ms.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
9-37. Erase Suspend
Erase suspend allow the interruption of all erase operations. After the device has entered Erase-Suspended mode,
the system can read any sector(s) or Block(s) except those being erased by the suspended erase operation.
Reading the sector or Block being erase suspended is invalid.
After erase suspend, WEL bit will be clear, only read related, resume and reset command can be accepted. (including:
03h, 0Bh, 3Bh, 6Bh, BBh, EBh, 5Ah, C0h, 06h, 04h, 2Bh, 9Fh, AFh, 05h, ABh, 90h, B1h, C1h, B0h, 30h, 66h, 99h,
00h, 35h, F5h, 15h, 2Dh, 27h, A7h, E2h, E0h, 16h)
If the system issues an Erase Suspend command after the sector erase operation has already begun, the device
will not enter Erase-Suspended mode until 20us time has elapsed.
Erase Suspend Bit (ESB) indicates the status of Erase Suspend operation. Users may use ESB to identify the state
of flash memory. After the flash memory is suspended by Erase Suspend command, ESB is set to "1". ESB is
cleared to "0" after erase operation resumes.
9-38. Program Suspend
Program suspend allows the interruption of all program operations. After the device has entered Program-
Suspended mode, the system can read any sector(s) or Block(s) except those be ing programmed by the suspended
program operation. Reading the sector or Block being program suspended is invalid.
After program suspend, WEL bit will be cleared, only read related, resume and reset command can be accepted.
(including: 03h, 0Bh, 3Bh, 6Bh, BBh, EBh, 5Ah, C0h, 06h, 04h, 2Bh, 9Fh, AFh, 05h, ABh, 90h, B1h, C1h, B0h, 30h,
66h, 99h, 00h, 35h, F5h, 15h, 2Dh, 27h, A7h, E2h, E0h, 16h)
Program Suspend Bit (PSB) indicates the status of Program Suspend operation. Users may use PSB to identify the
state of flash memory. After the flash memory is suspended by Program Suspend command, PSB is set to "1". PSB
is cleared to "0" after program operation resumes.
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Figure 75. Suspend to Read Latency
CS#
Program latency : 20us
Erase latency:20us
Suspend Command
[B0]
Read Command
Figure 76. Resume to Read Latency
CS#
TSE/TBE/TPP
Resume Command
[30]
Read Command
Figure 77. Resume to Suspend Latency
CS#
1ms
Resume Command
[30]
Suspend
Command
[B0]
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9-39. Write-Resume
The Write operation is being resumed when Write-Resume instruction issued. ESB or PSB (suspend status bit) in
Status register will be changed back to “0”
The operation of Write-Resume is as follows: CS# drives low send write resume command cycle (30H) drive
CS# high. By polling Busy Bit in status register, the internal write operation status could be checked to be completed
or not. The user may also wait the time lag of TSE, TBE, TPP for Sector-erase, Block-erase or Page-programming.
WREN (command "06" is not required to issue before resume. Resume to another suspend operation requires
latency time of 1ms.
Please note that, if "performance enhance mode" is executed during suspend operation, the device can not be
resume. To restart the write command, disable the "performance enhance mode" is required. After the "performance
enhance mode" is disable, the write-resume command is effective.
9-40. No Operation (NOP)
The “No Operation” command is only able to terminate the Reset Enable (RSTEN) command and will not affect any
other command.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
9-41. Software Reset (Reset-Enable (RSTEN) and Reset (RST))
The Software Reset operation combines two instructions: Reset-Enable (RSTEN) command and Reset (RST)
command. It returns the device to standby mode. All the volatile bits and settings will be cleared then, which makes
the device return to the default status as power on.
To execute Reset command (RST), the Reset-Enable (RSTEN) command must be executed first to perform the
Reset operation. If there is any other command to interrupt after the Reset-Enable command, the Reset-Enable will
be invalid.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
If the Reset command is executed during program or erase operation, the operation will be disabled, the data under
processing could be damaged or lost.
The reset time is different depending on the last operation. For details, please refer to "Table 14. Reset Timing-
(Other Operation)" for tREADY2.
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Figure 78. Software Reset Recovery
Figure 79. Reset Sequence (SPI mode)
Figure 80. Reset Sequence (QPI mode)
Note: Refer to "Table 14. Reset Timing-(Other Operation)" for tREADY2 data.
CS#
Mode
66 99
Stand-by Mode
tReady2
CS#
SCLK
SIO0 66h
Mode 3
Mode 0
Mode 3
Mode 0
99h
Command Command
tSHSL
MODE 3
SCLK
SIO[3:0]
CS#
MODE 3
99h66h
MODE 0
MODE 3
MODE 0MODE 0
tSHSL
Command Command
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9-42. Read SFDP Mode (RDSFDP)
The Serial Flash Discoverable Parameter (SFDP) standard provides a consistent method of describing the functional
and feature capabilities of serial flash devices in a standard set of internal parameter tables. These parameter tables
can be interrogated by host system software to enable adjustments needed to accommodate divergent features
from multiple vendors. The concept is similar to the one found in the Introduction of JEDEC Standard, JESD68 on
CFI.
The sequence of issuing RDSFDP instruction is CS# goes low→send RDSFDP instruction (5Ah)→send 3 address
bytes on SI pin→send 1 dummy byte on SI pin→read SFDP code on SO→to end RDSFDP operation can use CS#
to high at any time during data out.
SFDP is a JEDEC standard, JESD216.
Figure 81. Read Serial Flash Discoverable Parameter (RDSFDP) Sequence
23
21 3456789 10 28 29 30 31
22 21 3210
High-Z
24 BIT ADDRESS
0
32 33 34 36 37 38 39 40 41 42 43 44 45 46
765432 0
1
DATA OUT 1
Dummy Cycle
MSB
76543210
DATA OUT 2
MSB MSB
7
47
765432 0
1
35
SCLK
SI
CS#
SO
SCLK
SI
CS#
SO
5Ah
Command
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Table 10. Signature and Parameter Identification Data Values
Description Comment Add (h)
(Byte)
DW Add
(Bit)
Data
(h/b) note1
Data
(h)
SFDP Signature Fixed: 50444653h
00h 07:00 53h 53h
01h 15:08 46h 46h
02h 23:16 44h 44h
03h 31:24 50h 50h
SFDP Minor Revision Number Start from 00h 04h 07:00 00h 00h
SFDP Major Revision Number Start from 01h 05h 15:08 01h 01h
Number of Parameter Headers This number is 0-based. Therefore,
0 indicates 1 parameter header. 06h 23:16 01h 01h
Unused 07h 31:24 FFh FFh
ID number (JEDEC) 00h: it indicates a JEDEC specified
header. 08h 07:00 00h 00h
Parameter Table Minor Revision
Number Start from 00h 09h 15:08 00h 00h
Parameter Table Major Revision
Number Start from 01h 0Ah 23:16 01h 01h
Parameter Table Length
(in double word)
How many DWORDs in the
Parameter table 0Bh 31:24 09h 09h
Parameter Table Pointer (PTP) First address of JEDEC Flash
Parameter table
0Ch 07:00 30h 30h
0Dh 15:08 00h 00h
0Eh 23:16 00h 00h
Unused 0Fh 31:24 FFh FFh
ID number
(Macronix manufacturer ID)
it indicates Macronix manufacturer
ID 10h 07:00 C2h C2h
Parameter Table Minor Revision
Number Start from 00h 11h 15:08 00h 00h
Parameter Table Major Revision
Number Start from 01h 12h 23:16 01h 01h
Parameter Table Length
(in double word)
How many DWORDs in the
Parameter table 13h 31:24 04h 04h
Parameter Table Pointer (PTP) First address of Macronix Flash
Parameter table
14h 07:00 60h 60h
15h 15:08 00h 00h
16h 23:16 00h 00h
Unused 17h 31:24 FFh FFh
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Table 11. Parameter Table (0): JEDEC Flash Parameter Tables
Description Comment Add (h)
(Byte)
DW Add
(Bit)
Data
(h/b) note1
Data
(h)
Block/Sector Erase sizes
00: Reserved, 01: 4KB erase,
10: Reserved,
11: not support 4KB erase
30h
01:00 01b
E5h
Write Granularity 0: 1Byte, 1: 64Byte or larger 02 1b
Write Enable Instruction Required
for Writing to Volatile Status
Registers
0: not required
1: required 00h to be written to the
status register
03 0b
Write Enable Opcode Select for
Writing to Volatile Status Registers
0: use 50h opcode,
1: use 06h opcode
Note: If target flash status register is
nonvolatile, then bits 3 and 4 must
be set to 00b.
04 0b
Unused Contains 111b and can never be
changed 07:05 111b
4KB Erase Opcode 31h 15:08 20h 20h
(1-1-2) Fast Read (Note2) 0=not support 1=support
32h
16 1b
F3h
Address Bytes Number used in
addressing flash array
00: 3Byte only, 01: 3 or 4Byte,
10: 4Byte only, 11: Reserved 18:17 01b
Double Transfer Rate (DTR)
Clocking 0=not support 1=support 19 0b
(1-2-2) Fast Read 0=not support 1=support 20 1b
(1-4-4) Fast Read 0=not support 1=support 21 1b
(1-1-4) Fast Read 0=not support 1=support 22 1b
Unused 23 1b
Unused 33h 31:24 FFh FFh
Flash Memory Density 37h:34h 31:00 0FFF FFFFh
(1-4-4) Fast Read Number of Wait
states (Note3)
0 0000b: Wait states (Dummy
Clocks) not support 38h
04:00 0 0100b
44h
(1-4-4) Fast Read Number of
Mode Bits (Note4) 000b: Mode Bits not support 07:05 010b
(1-4-4) Fast Read Opcode 39h 15:08 EBh EBh
(1-1-4) Fast Read Number of Wait
states
0 0000b: Wait states (Dummy
Clocks) not support 3Ah
20:16 0 1000b
08h
(1-1-4) Fast Read Number of
Mode Bits 000b: Mode Bits not support 23:21 000b
(1-1-4) Fast Read Opcode 3Bh 31:24 6Bh 6Bh
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Description Comment Add (h)
(Byte)
DW Add
(Bit)
Data
(h/b) note1
Data
(h)
(1-1-2) Fast Read Number of Wait
states
0 0000b: Wait states (Dummy
Clocks) not supported 3Ch
04:00 0 1000b
08h
(1-1-2) Fast Read Number of
Mode Bits 000b: Mode Bits not supported 07:05 000b
(1-1-2) Fast Read Opcode 3Dh 15:08 3Bh 3Bh
(1-2-2) Fast Read Number of Wait
states
0 0000b: Wait states (Dummy
Clocks) not supported 3Eh
20:16 0 0100b
04h
(1-2-2) Fast Read Number of
Mode Bits 000b: Mode Bits not supported 23:21 000b
(1-2-2) Fast Read Opcode 3Fh 31:24 BBh BBh
(2-2-2) Fast Read 0=not support 1=support
40h
00 0b
FEh
Unused 03:01 111b
(4-4-4) Fast Read 0=not support 1=support 04 1b
Unused 07:05 111b
Unused 43h:41h 31:08 FFh FFh
Unused 45h:44h 15:00 FFh FFh
(2-2-2) Fast Read Number of Wait
states
0 0000b: Wait states (Dummy
Clocks) not supported 46h
20:16 0 0000b
00h
(2-2-2) Fast Read Number of
Mode Bits 000b: Mode Bits not supported 23:21 000b
(2-2-2) Fast Read Opcode 47h 31:24 FFh FFh
Unused 49h:48h 15:00 FFh FFh
(4-4-4) Fast Read Number of Wait
states
0 0000b: Wait states (Dummy
Clocks) not supported 4Ah
20:16 0 0100b
44h
(4-4-4) Fast Read Number of
Mode Bits 000b: Mode Bits not supported 23:21 010b
(4-4-4) Fast Read Opcode 4Bh 31:24 EBh EBh
Sector Type 1 Size Sector/block size = 2^N bytes (Note5)
0x00b: this sector type doesn't exist 4Ch 07:00 0Ch 0Ch
Sector Type 1 erase Opcode 4Dh 15:08 20h 20h
Sector Type 2 Size Sector/block size = 2^N bytes
0x00b: this sector type doesn't exist 4Eh 23:16 0Fh 0Fh
Sector Type 2 erase Opcode 4Fh 31:24 52h 52h
Sector Type 3 Size Sector/block size = 2^N bytes
0x00b: this sector type doesn't exist 50h 07:00 10h 10h
Sector Type 3 erase Opcode 51h 15:08 D8h D8h
Sector Type 4 Size Sector/block size = 2^N bytes
0x00b: this sector type doesn't exist 52h 23:16 00h 00h
Sector Type 4 erase Opcode 53h 31:24 FFh FFh
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Table 12. Parameter Table (1): Macronix Flash Parameter Tables
Description Comment Add (h)
(Byte)
DW Add
(Bit)
Data
(h/b) note1
Data
(h)
Vcc Supply Maximum Voltage
2000h=2.000V
2700h=2.700V
3600h=3.600V
61h:60h 07:00
15:08
00h
36h
00h
36h
Vcc Supply Minimum Voltage
1650h=1.650V
2250h=2.250V
2350h=2.350V
2700h=2.700V
63h:62h 23:16
31:24
00h
27h
00h
27h
H/W Reset# pin 0=not support 1=support
65h:64h
00 1b
F99Dh
H/W Hold# pin 0=not support 1=support 01 0b
Deep Power Down Mode 0=not support 1=support 02 1b
S/W Reset 0=not support 1=support 03 1b
S/W Reset Opcode Reset Enable (66h) should be issued
before Reset Opcode. 11:04 1001 1001b
(99h)
Program Suspend/Resume 0=not support 1=support 12 1b
Erase Suspend/Resume 0=not support 1=support 13 1b
Unused 14 1b
Wrap-Around Read mode 0=not support 1=support 15 1b
Wrap-Around Read mode Opcode 66h 23:16 C0h C0h
Wrap-Around Read data length
08h:support 8B wrap-around read
16h:8B&16B
32h:8B&16B&32B
64h:8B&16B&32B&64B
67h 31:24 64h 64h
Individual block lock 0=not support 1=support
6Bh:68h
00 1b
CB85h
Individual block lock bit
(Volatile/Nonvolatile) 0=Volatile 1=Nonvolatile 01 0b
Individual block lock Opcode 09:02 1110 0001b
(E1h)
Individual block lock Volatile
protect bit default protect status 0=protect 1=unprotect 10 0b
Secured OTP 0=not support 1=support 11 1b
Read Lock 0=not support 1=support 12 0b
Permanent Lock 0=not support 1=support 13 0b
Unused 15:14 11b
Unused 31:16 FFh FFh
Unused 6Fh:6Ch [31:00] FFh FFh
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Note 1: h/b is hexadecimal or binary.
Note 2: (x-y-z) means I/O mode nomenclature used to indicate the number of active pins used for the opcode (x),
address (y), and data (z). At the present time, the only valid Read SFDP instruction modes are: (1-1-1), (2-2-2),
and (4-4-4)
Note 3: Wait States is required dummy clock cycles after the address bits or optional mode bits.
Note 4: Mode Bits is optional control bits that follow the address bits. These bits are driven by the system controller
if they are specified. (eg,read performance enhance toggling bits)
Note 5: 4KB=2^0Ch,32KB=2^0Fh,64KB=2^10h
Note 6: All unused and undefined area data is blank FFh.
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10. RESET
Driving the RESET# pin low for a period of tRLRH or longer will reset the device. After reset cycle, the device is at
the following states:
- Standby mode
- All the volatile bits such as WEL/WIP/SRAM lock bit will return to the default status as power on.
- 3-byte address mode
If the device is under programming or erasing, driving the RESET# pin low will also terminate the operation and data
could be lost. During the resetting cycle, the SO data becomes high impedance and the current will be reduced to
minimum.
Figure 82. RESET Timing
tRHSL
tRS
tRH
tRLRH
tREADY1 / tREADY2
SCLK
RESET#
CS#
Symbol Parameter Min. Typ. Max. Unit
tRHSL Reset# high before CS# low 10 us
tRS Reset# setup time 15 ns
tRH Reset# hold time 15 ns
tRLRH Reset# low pulse width 10 us
tREADY1 Reset Recovery time 35 us
Table 13. Reset Timing-(Power On)
Symbol Parameter Min. Typ. Max. Unit
tRHSL Reset# high before CS# low 10 us
tRS Reset# setup time 15 ns
tRH Reset# hold time 15 ns
tRLRH Reset# low pulse width 10 us
tREADY2
Reset Recovery time (During instruction decoding) 40 us
Reset Recovery time (for read operation) 35 us
Reset Recovery time (for program operation) 310 us
Reset Recovery time(for SE4KB operation) 12 ms
Reset Recovery time (for BE64K/BE32KB operation) 25 ms
Reset Recovery time (for Chip Erase operation) 100 ms
Reset Recovery time (for WRSR operation) 40 ms
Table 14. Reset Timing-(Other Operation)
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11. POWER-ON STATE
The device is at below states when power-up:
- Standby mode (please note it is not deep power-down mode)
- Write Enable Latch (WEL) bit is reset
The device must not be selected during power-up and power-down stage unless the VCC achieves below correct
level:
- VCC minimum at power-up stage and then after a delay of tVSL
- GND at power-down
Please note that a pull-up resistor on CS# may ensure a safe and proper power-up/down level.
An internal power-on reset (POR) circuit may protect the device from data corruption and inadvertent data change
during power up state. When VCC is lower than VWI (POR threshold voltage value), the internal logic is reset and
the flash device has no response to any command.
For further protection on the device, if the VCC does not reach the VCC minimum level, the correct operation is not
guaranteed. The write, erase, and program command should be sent after the below time delay:
- tVSL after VCC reached VCC minimum level
The device can accept read command after VCC reached VCC minimum and a time delay of tVSL.
Please refer to the "power-up timing".
Note:
- To stabilize the VCC level, the VCC rail decoupled by a suitable capacitor close to package pins is
recommended. (generally around 0.1uF)
- At power-down stage, the VCC drops below VWI level, all operations are disable and device has no response
to any command. The data corruption might occur during the stage while a write, program, erase cycle is in
progress.
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12. ELECTRICAL SPECIFICATIONS
Figure 83. Maximum Negative Overshoot Waveform Figure 84. Maximum Positive Overshoot Waveform
Table 16. ABSOLUTE MAXIMUM RATINGS
RATING VALUE
Ambient Operating Temperature Industrial grade -40°C to 85°C
Storage Temperature -65°C to 150°C
Applied Input Voltage -0.5V to VCC+0.5V
Applied Output Voltage -0.5V to VCC+0.5V
VCC to Ground Potential -0.5V to VCC+0.5V
Table 17. CAPACITANCE TA = 25°C, f = 1.0 MHz
Symbol Parameter Min. Typ. Max. Unit Conditions
CIN Input Capacitance 6 pF VIN = 0V
COUT Output Capacitance 8 pF VOUT = 0V
NOTICE:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage
to the device. This is stress rating only and functional operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended period may affect reliability.
2. Specifications contained within the following tables are subject to change.
3. During voltage transitions, all pins may overshoot Vss to -2.0V and Vcc to +2.0V for periods up to 20ns, see
"Figure 83. Maximum Negative Overshoot Waveform" and "Figure 84. Maximum Positive Overshoot Waveform".
Vss
Vss-2.0V
20ns 20ns
20ns
Vcc + 2.0V
Vcc
20ns 20ns
20ns
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Figure 85. INPUT TEST WAVEFORMS AND MEASUREMENT LEVEL
Figure 86. OUTPUT LOADING
AC
Measurement
Level
Input timing reference level Output timing reference level
0.8VCC 0.7VCC
0.8V
0.5VCC
0.2VCC
Note: Input pulse rise and fall time are <5ns
DEVICE UNDER
TEST
CL 25K ohm
25K ohm
+1.8V
CL=30pF Including jig capacitance
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Table 18. DC CHARACTERISTICS (Temperature = -40°C to 85°C, VCC = 2.7V ~ 3.6V)
Notes :
1. Typical values at VCC = 3.3V, T = 25°C. These currents are valid for all product versions (package and speeds).
2. Typical value is calculated by simulation.
Symbol Parameter Notes Min. Typ. Max. Units Test Conditions
ILI Input Load Current 1 ±2 uA VCC = VCC Max,
VIN = VCC or GND
ILO Output Leakage Current 1 ±2 uA VCC = VCC Max,
VOUT = VCC or GND
ISB1 VCC Standby Current 1 15 60 uA VIN = VCC or GND,
CS# = VCC
ISB2 Deep Power-down
Current 2 20 uA VIN = VCC or GND,
CS# = VCC
ICC1 VCC Read 1
25 mA
f=133MHz, (4 x I/O read)
SCLK=0.1VCC/0.9VCC,
SO=Open
20 mA
f=104MHz, (4 x I/O read)
SCLK=0.1VCC/0.9VCC,
SO=Open
15 mA
f=84MHz,
SCLK=0.1VCC/0.9VCC,
SO=Open
ICC2 VCC Program Current
(PP) 1 20 25 mA Program in Progress,
CS# = VCC
ICC3 VCC Write Status
Register (WRSR) Current 20 mA Program status register in
progress, CS#=VCC
ICC4
VCC Sector/Block (32K,
64K) Erase Current
(SE/BE/BE32K)
1 20 25 mA Erase in Progress,
CS#=VCC
ICC5 VCC Chip Erase Current
(CE) 1 20 25 mA Erase in Progress,
CS#=VCC
VIL Input Low Voltage -0.5 0.8 V
VIH Input High Voltage 0.7VCC VCC+0.4 V
VOL Output Low Voltage 0.2 VIOL = 100uA
VOH Output High Voltage VCC-0.2 V IOH = -100uA
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Table 19. AC CHARACTERISTICS (Temperature = -40°C to 85°C, VCC = 2.7V ~ 3.6V)
Symbol Alt. Parameter Min. Typ. Max. Unit
fSCLK fC Clock Frequency for all commands (except Read) D.C. 133 MHz
fRSCLK fR Clock Frequency for READ instructions 50 MHz
fTSCLK fT Clock Frequency for 2READ instructions 84(7) MHz
fQ Clock Frequency for 4READ instructions 84(7) MHz
tCH(1) tCLH Clock High Time Others (fSCLK) 3.3 ns
Normal Read (fRSCLK) 7 ns
tCL(1) tCLL Clock Low Time Others (fSCLK) 3.3 ns
Normal Read (fRSCLK) 7 ns
tCLCH(2) Clock Rise Time (peak to peak) 0.1 V/ns
tCHCL(2) Clock Fall Time (peak to peak) 0.1 V/ns
tSLCH tCSS CS# Active Setup Time (relative to SCLK) 5 ns
tCHSL CS# Not Active Hold Time (relative to SCLK) 7 ns
tDVCH tDSU Data In Setup Time 2 ns
tCHDX tDH Data In Hold Time 4 ns
tCHSH CS# Active Hold Time (relative to SCLK) 5 ns
tSHCH CS# Not Active Setup Time (relative to SCLK) 5 ns
tSHSL tCSH CS# Deselect Time Read 7 ns
Write/Erase/Program 30 ns
tSHQZ(2) tDIS Output Disable Time 8 ns
tCLQV tV Clock Low to Output Valid
Loading: 30pF/15pF
Loading: 30pF 8 ns
Loading: 15pF 6 ns
tCLQX tHO Output Hold Time 1 ns
tWHSL(3) Write Protect Setup Time 20 ns
tSHWL(3) Write Protect Hold Time 100 ns
tDP(2) CS# High to Deep Power-down Mode 10 us
tRES1(2) CS# High to Standby Mode without Electronic Signature
Read 30 us
tRES2(2) CS# High to Standby Mode with Electronic Signature Read 30 us
tW Write Status/Configuration Register Cycle Time 40 ms
tWREAW Write Extended Address Register 40 ns
tBP Byte-Program 12 30 us
tPP Page Program Cycle Time 0.6 3 ms
tPP(5) Page Program Cycle Time (n bytes)
0.008+
(nx0.004)
(6)
3 ms
tSE Sector Erase Cycle Time 43 200 ms
tBE32 Block Erase (32KB) Cycle Time 190 1000 ms
tBE Block Erase (64KB) Cycle Time 340 2000 ms
tCE Chip Erase Cycle Time 120 300 s
Notes:
1. tCH + tCL must be greater than or equal to 1/ Frequency.
2. Typical values given for TA=25°C. Not 100% tested.
3. Only applicable as a constraint for a WRSR instruction when SRWD is set at 1.
4. Test condition is shown as Figure 85 and Figure 86.
5. While programming consecutive bytes, Page Program instruction provides optimized timings by selecting to
program the whole 256 bytes or only a few bytes between 1~256 bytes.
6. “n”=how many bytes to program. In the formula, while n=1, byte program time=12us.
7. By default dummy cycle value. Please refer to the "Table 1. Read performance Comparison".
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Notes :
1. Sampled, not 100% tested.
2. For AC spec tCHSL, tSLCH, tDVCH, tCHDX, tSHSL, tCHSH, tSHCH, tCHCL, tCLCH in the figure, please refer to
Table 19. AC CHARACTERISTICS.
Symbol Parameter Notes Min. Max. Unit
tVR VCC Rise Time 1 20 500000 us/V
13. OPERATING CONDITIONS
At Device Power-Up and Power-Down
AC timing illustrated in Figure 87 and Figure 88 are for the supply voltages and the control signals at device power-
up and power-down. If the timing in the figures is ignored, the device will not operate correctly.
During power-up and power-down, CS# needs to follow the voltage applied on VCC to keep the device not to be
selected. The CS# can be driven low when VCC reach Vcc(min.) and wait a period of tVSL.
Figure 87. AC Timing at Device Power-Up
SCLK
SI
CS#
VCC
MSB IN
SO
tDVCH
High Impedance
LSB IN
tSLCH
tCHDX
tCHCL
tCLCH
tSHCH
tSHSL
tCHSHtCHSL
tVR
VCC(min)
GND
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Figure 88. Power-Down Sequence
CS#
SCLK
VCC
During power-down, CS# needs to follow the voltage drop on VCC to avoid mis-operation.
Figure 89. Power-up Timing
VCC
VCC(min)
Chip Selection is Not Allowed
tVSL
time
Device is fully accessible
VCC(max)
VWI
98
MX25L25635F
REV. 1.2, AUG. 09, 2013P/N: PM1738
13-1. INITIAL DELIVERY STATE
The device is delivered with the memory array erased: all bits are set to 1 (each byte contains FFh). The Status
Register contains 00h (all Status Register bits are 0).
Figure 90. Power Up/Down and Voltage Drop
Table 20. Power-Up/Down Voltage and Timing
VCC
Time
VCC (max.)
VCC (min.)
V
tPWD
tVSL
Chip Select is not allowed
Full Device
Access
Allowed
PWD
(max.)
For Power-down to Power-up operation, the VCC of flash device must below VPWD for at least tPWD timing. Please
check the table below for more detail.
Symbol Parameter Min. Max. Unit
tVSL VCC(min.) to device operation 800 us
VWI Command Inhibit Voltage 2.3 2.5 V
VPWD VCC voltage needed to below VPWD for ensuring initialization will occur 0.9 V
tPWD The minimum duration for ensuring initialization will occur 300 us
tVR VCC Rise Time 20 500000 us/V
VCC VCC Power Supply 2.7 3.6 V
Note: These parameters are characterized only.
99
MX25L25635F
REV. 1.2, AUG. 09, 2013P/N: PM1738
14. ERASE AND PROGRAMMING PERFORMANCE
Note:
1. Typical program and erase time assumes the following conditions: 25°C, 3.3V, and all zero pattern.
2. Under worst conditions of 85°C and 2.7V.
3. System-level overhead is the time required to execute the first-bus-cycle sequence for the programming
command.
4. The maximum chip programming time is evaluated under the worst conditions of 0°C, VCC=3.3V, and 100K
cycle with 90% confidence level.
Min. Max.
Input Voltage with respect to GND on all power pins, SI, CS# -1.0V 2 VCCmax
Input Voltage with respect to GND on SO -1.0V VCC + 1.0V
Current -100mA +100mA
Includes all pins except VCC. Test conditions: VCC = 3.0V, one pin at a time.
PARAMETER Min. TYP. (1) Max. (2) UNIT
Write Status Register Cycle Time 40 ms
Sector Erase Cycle Time (4KB) 43 200 ms
Block Erase Cycle Time (32KB) 0.19 1 s
Block Erase Cycle Time (64KB) 0.34 2 s
Chip Erase Cycle Time 120 300 s
Byte Program Time (via page program command) 12 30 us
Page Program Time 0.6 3 ms
Erase/Program Cycle 100,000 cycles
PARAMETER Condition Min. Max. UNIT
Data retention 55˚C 20 years
15. DATA RETENTION
16. LATCH-UP CHARACTERISTICS
100
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17. ORDERING INFORMATION
PART NO. CLOCK (MHz) TEMPERATURE PACKAGE Remark
MX25L25635FMI-10G 104 -40°C~85°C 16-SOP (300mil)
MX25L25635FZ2I-10G 104 -40°C~85°C 8-WSON (8x6mm)
101
MX25L25635F
REV. 1.2, AUG. 09, 2013P/N: PM1738
18. PART NAME DESCRIPTION
MX 25 L 10Z2 I G
OPTION:
G: RoHS Compliant and Halogen-free
SPEED:
10: 104MHz
TEMPERATURE RANGE:
I: Industrial (-40°C to 85°C)
PACKAGE:
M: 16-SOP (300mil)
Z2: 8-WSON (8x6mm)
DENSITY & MODE:
25635F: 256Mb
TYPE:
L: 3V
DEVICE:
25: Serial Flash
25635F
102
MX25L25635F
REV. 1.2, AUG. 09, 2013P/N: PM1738
19. PACKAGE INFORMATION
103
MX25L25635F
REV. 1.2, AUG. 09, 2013P/N: PM1738
104
MX25L25635F
REV. 1.2, AUG. 09, 2013P/N: PM1738
20. REVISION HISTORY
Revision No. Description Page Date
0.01 1. Added Security Register description P68,69 MAY/09/2012
2. Modify the VIH/VIL P94
3. Modify the overshoot from VCC+1.0V or -0.5V to P92
VCC+2.0V or -2.0V
4. Added Fast Boot Sequence P58
5. Modified data retention from 10 years to 20 years P4
6. Added Data Retention P100
7. Corrected content error P9,15,21,23,35,40,
P48,50,53-56,59,
P70,72,75-77,80,83,90
8. Modified Chip Erase Cycle Time, tCH/tCL and tCLQX P95,100
0.02 1. Modified content and descriptions P7,9,16,19-20,23 AUG/13/2012
P31-32,38, 41-74
2. Modified Min. tVSL from 500us to 800us. P98
3. Modified tCH and tCL from 9ns to 7ns. P95
4. Modified SPB Lock Register table. P74
5. Changed "ADVANCE INFORMATION" to "PRELIMINARY" P4
6. Updated Fast Boot Sequence figures. P59
7. Modified RDSR/RDCR (QPI Mode) figures P29-30
8. Revised lock register bit descriptions P70, 75
1.0 1. Removed "PRELIMINARY". P4 OCT/30/2012
2. Modified 16-SOP pin descriptions. P7
3. Added Enable QPI mode related descriptions. P16
4. Modified Erase Fail bit descriptions. P69
5. Optimize ISB1 & ISB2 spec P94
6. Corrected content error P73,80
1.1 1. Modified RESET Timing definition P90 DEC/26/2012
2. Added Power Up/Down and Voltage Drop information P98
3. Corrected content error P9,57,69,95
1.2 1. Modified RESET Timing definition P83 AUG/09/2013
2. Added USPB information P72,78
3. Added note on WP# setup P39
4. Corrected content error P15,42,57,58,64,
P75,77,82-83,92-93
MX25L25635F
105
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Except for customized products which has been expressly identified in the applicable agreement, Macronix's
products are designed, developed, and/or manufactured for ordinary business, industrial, personal, and/or
household applications only, and not for use in any applications which may, directly or indirectly, cause death,
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distributors shall be released from any and all liability arisen therefrom.
Copyright© Macronix International Co., Ltd. 2011~2013. All rights reserved, including the trademarks and
tradename thereof, such as Macronix, MXIC, MXIC Logo, MX Logo, Integrated Solutions Provider, NBit, Nbit,
NBiit, Macronix NBit, eLiteFlash, HybridNVM, HybridFlash, XtraROM, Phines, KH Logo, BE-SONOS, KSMC,
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