MBR120ESFTxG, NRVB120ESFTxG Datasheet by ON Semiconductor

View All Related Products | Download PDF Datasheet
w ON Semiconductor"9
© Semiconductor Components Industries, LLC, 2013
May, 2013 Rev. 4
1Publication Order Number:
MBR120ESFT1/D
MBR120ESF, NRVB120ESF
Surface Mount
Schottky Power Rectifier
Plastic SOD123 Package
This device uses the Schottky Barrier principle with a large area
metaltosilicon power diode. Ideally suited for low voltage, high
frequency rectification or as free wheeling and polarity protection
diodes in surface mount applications where compact size and weight
are critical to the system. This package also provides an easy to work
with alternative to leadless 34 package style. Because of its small size,
it is ideal for use in portable and battery powered products such as
cellular and cordless phones, chargers, notebook computers, printers,
PDAs and PCMCIA cards. Typical applications are ACDC and
DCDC converters, reverse battery protection, and “Oring” of
multiple supply voltages and any other application where performance
and size are critical.
Features
Guardring for Stress Protection
Low Leakage
150°C Operating Junction Temperature
Epoxy Meets UL 94 V0 @ 0.125 in
Package Designed for Optimal Automated Board Assembly
ESD Rating:
Human Body Model = 3B
Machine Model = C
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
These Devices are PbFree and are RoHS Compliant*
Mechanical Characteristics
Device Marking: L2E
Polarity Designator: Cathode Band
Weight: 11.7 mg (approximately)
Case: Epoxy, Molded
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
ORDERING INFORMATION
SOD123FL
CASE 498
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES
20 VOLTS
http://onsemi.com
L2EMG
G
L2E = Specific Device Code
M = Date Code
G= PbFree Package
MARKING DIAGRAM
MBR120ESFT1G SOD123FL
(PbFree)
3,000/
Tape & Reel **
MBR120ESFT3G SOD123FL
(PbFree)
10,000 /
Tape & Reel ***
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
(Note: Microdot may be in either location)
NRVB120ESFT1G SOD123FL
(PbFree)
3,000/
Tape & Reel **
NRVB120ESFT3G SOD123FL
(PbFree)
10,000 /
Tape & Reel ***
** 8 mm Tape, 7” Reel
*** 8 mm Tape, 13” Reel
MBR120ESF, NRVB120ESF
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
20 V
Average Rectified Forward Current
(At Rated VR, TL = 140°C)
IO1.0
A
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 20 kHz, TL = 125°C)
IFRM 2.0
A
NonRepetitive Peak Surge Current
(NonRepetitive peak surge current, halfwave, single phase, 60 Hz)
IFSM 40
A
Storage Temperature Tstg 65 to 150 °C
Operating Junction Temperature TJ65 to 150 °C
Voltage Rate of Change (Rated VR, TJ = 25°C) dv/dt 10,000 V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance JunctiontoLead (Note 1)
Thermal Resistance JunctiontoLead (Note 2)
Thermal Resistance JunctiontoAmbient (Note 1)
Thermal Resistance JunctiontoAmbient (Note 2)
Rtjl
Rtjl
Rtja
Rtja
26
21
325
82
°C/W
1. Mounted with minimum recommended pad size, PC Board FR4.
2. Mounted with 1 in. copper pad (Cu area 700 mm2).
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 3), See Figure 2 VFTJ = 25°C TJ = 100°CV
(IF = 0.1 A)
(IF = 1.0 A)
(IF = 2.0 A)
0.455
0.530
0.595
0.360
0.455
0.540
Maximum Instantaneous Reverse Current (Note 3), See Figure 4 IRTJ = 25°C TJ = 100°CmA
(VR = 20 V)
(VR = 10 V)
(VR = 5.0 V)
10
1.0
0.5
1600
500
300
3. Pulse Test: Pulse Width 250 ms, Duty Cycle 2%.
dc ka ‘o ka/ID : 5 RM0 :10 /
MBR120ESF, NRVB120ESF
http://onsemi.com
3
iF
, INSTANTANEOUS FORWARD CURRENT (AMPS)
iF
, INSTANTANEOUS FORWARD CURRENT (AMPS)
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage
0.2
vF
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
10
1.0
VF
, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE
(VOLTS)
0.1
0.60.4 0.8
TJ = 100°C
TJ = 150°C
TJ = 40°C
TJ = 25°C
0.2
10
1.0
0.1
0.60.4 0.8
TJ = 100°C
TJ = 150°C
TJ = 25°C
VR, REVERSE VOLTAGE (VOLTS)
IR, MAXIMUM REVERSE CURRENT (AMPS)
IR, REVERSE CURRENT (AMPS)
Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current
200
VR, REVERSE VOLTAGE (VOLTS)
100E3
10E3
10E6
1E6
100E9
10E9
5.0 10 15 200
100E3
10E3
1E3
100E9
10E9
5.0 10 15
TJ = 150°C
TJ = 100°C
TJ = 25°C
TJ = 150°C
TJ = 100°C
TJ = 25°C
100E6
10E6
1E6
100E6
1E3
Figure 5. Current Derating Figure 6. Forward Power Dissipation
PFO, AVERAGE DISSIPATION (WATTS)
Ipk/Io = 5
IO, AVERAGE FORWARD CURRENT (AMPS)
0.20
0.7
0.6
0.5
0.3
0.1
0
1.00.4 0.8 1.2 1.6
0.4
SQUARE
WAVE
dc
Ipk/Io = p
Ipk/Io = 10
Ipk/Io = 20
0.6 1.4
0.2
IO, AVERAGE FORWARD CURRENT (AMPS)
TL, LEAD TEMPERATURE (°C)
4525
1.8
1.2
1.0
0.6
0.2
0
85 105 165
0.8
65 125
0.4
1.4
1.6
Ipk/Io = 20
Ipk/Io = 10
Ipk/Io = 5
Ipk/Io = p
SQUARE
WAVE
dc freq = 20 kHz
145
SINGLE PULS
MBR120ESF, NRVB120ESF
http://onsemi.com
4
C, CAPACITANCE (pF)
Figure 7. Capacitance
120
VR, REVERSE VOLTAGE (VOLTS)
1000
100
10
6.02.0 4.0 8.0 10
TJ = 25°C
20181614
Figure 8. Typical Operating Temperature
Derating*
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re-
verse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating
TJ may be calculated from the equation: TJ = TJmax r(t)(Pf + Pr) where
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax r(t)Pr,
where r(t) = Rthja. For other power applications further calculations must be performed.
TJ, DERATED OPERATING
TEMPERATURE (°C)
120
VR, DC REVERSE VOLTAGE (VOLTS)
155
145
6.02.0 4.0 8.0 10 2014 16 18
135
137
139
141
143
147
149
151
153
RqJA = 25.6°C/W
400°C/W
324.9°C/W
235°C/W
130°C/W
r(t), TRANSIENT THERMAL RESISTANCE
Figure 9. Thermal Response
10000.10.00001
t1, TIME (sec)
1000
1
0.0001 0.001 0.01 1 10 1000.000001
0.1
10
100
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
qJA = 321.8 °C/W
Test Type > Min Pad < Die Size 38x38 @ 75% mils
D = 0.5
SINGLE PULSE
0.2
0.1
0.05
0.01
0N Semiwndudw" ON Semxcunduclm and are lvademavks av Semxcanduclur Campunenls lnduslnes LLC dba ON Semxcanduclar ar us suhsxdxanes m xna Umled sxaxas andJm mhev commas ON Semxcunduclar vesewes ma th| to make changes wuhum Yunhev nauaa to any prnduns havem ON Semanduc‘m makes m7 wanamy represenlalmn m guarantee regardmg ma sumahmh/ at W; manuals can any pamcu‘av purpase nnv dues ON Semumnduclm assume any Mammy ansmg mac xna apphcahan m use no any pmduclnv mum and saaamcauy dwsc‘axms any and au Mammy mc‘udmg wmnam hmma‘mn spema‘ cansequenha‘ m \nmdenla‘ damages ON Semxmnduclar dues nn| aanyay any hcense under Ms pa|em thls nar xna ngms av n|hers
SOD123FL
CASE 498
ISSUE D
DATE 10 MAY 2013
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH.
4. DIMENSIONS D AND J ARE TO BE MEASURED ON FLAT SECTION
OF THE LEAD: BETWEEN 0.10 AND 0.25 MM FROM THE LEAD TIP.
D
E
b
A
A1
L
c
XXXMG
G
XXX = Specific Device Code
M = Date Code
G= PbFree Package
POLARITY INDICATOR
OPTIONAL AS NEEDED
SCALE 4:1
*This information is generic. Please refer to
device data sheet for actual part marking.
PbFree indicator, “G” or microdot “ G”,
may or may not be present.
GENERIC
MARKING DIAGRAM*
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.90 0.95 0.98 0.035
INCHES
A1 0.00 0.05 0.10 0.000
b0.70 0.90 1.10 0.028
c0.10 0.15 0.20 0.004
D1.50 1.65 1.80 0.059
E2.50 2.70 2.90 0.098
L0.55 0.75 0.95 0.022
0.037 0.039
0.002 0.004
0.035 0.043
0.006 0.008
0.065 0.071
0.106 0.114
0.030 0.037
NOM MAX
3.40 3.60 3.80 0.134 0.142 0.150
HE
0°8°0°8°
q
q
q
(Note: Microdot may be in either location)
TOP VIEW
BOTTOM VIEW
SIDE VIEW
HE
2X
2X
END VIEW
RECOMMENDED
DIMENSIONS: MILLIMETERS
1.25
2X
4.20
1.22
2X
12
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
98AON11184D
DOCUMENT NUMBER:
DESCRIPTION:
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
SOD123FL
© Semiconductor Components Industries, LLC, 2019 www.onsemi.com
a a e lrademavks av Semxcunduclm Cnmvnnems In "sine \ghlsmanumhernlpalems \rademavks Dav www menu cumrsuerguwaxem Mavkmg gm 9 www nnserm cum
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 8002829855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative

Products related to this Datasheet

DIODE SCHOTTKY 20V 1A SOD123
DIODE SCHOTTKY 20V 1A SOD123L
DIODE SCHOTTKY 20V 1A SOD123L
DIODE SCHOTTKY 20V 1A SOD123FL
DIODE SCHOTTKY 20V 1A SOD123L
DIODE SCHOTTKY 20V 1A SOD123
DIODE SCHOTTKY 20V 1A SOD123
DIODE SCHOTTKY 20V 1A SOD123FL
DIODE SCHOTTKY 20V 1A SOD123FL
DIODE SCHOTTKY 20V 1A SOD123